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Enhanced Design and Performance of Power FETs Based on Electromagnetic Modelling
Proceedings of the 1st European Microwave Integrated Circuits Conference Enhanced Design and Performance of Power FETs based on Electromagnetic Modelling David Denis1, Ian Hunter1 and Christopher M. Snowden2 1 University of Leeds, Institute of Microwaves & Photonics, School of Electronic & Electrical Engineering, LS2 9JT Leeds, United Kingdom 2 University of Surrey, Guildford, GU2 7XH, United Ki
A Method to Design Distributed Harmonic Matching Networks
Proceedings of the 1st European Microwave Integrated Circuits Conference A Method to Design Distributed Harmonic Matching Networks Paolo Colantonio, Franco Giannini and Lucio Scucchia Dep. of Electronics Engineering - University of Rome - "Tor Vergata", via Del Politecnico n.1, 00133, Rome, Italy Abstract -- In this paper a closed-form synthesis of distributed networks for harmonic matching is pr
Multi Function and High Power Amplifier Chipset for X-Band Phased Array Frontends
Proceedings of the 1st European Microwave Integrated Circuits Conference Multi Function and High Power Amplifier Chipset for X-Band Phased Array Frontends M. van Heijningen1, A. de Boer1, J.A. Hoogland1, M. van Wanum1, A.P. de Hek1, F.E. van Vliet1 and H. Brouzes2 TNO Defence, Security and Safety, Oude Waalsdorperweg 63, 2597 AK, The Hague, The Netherlands, Email: Marc.vanHeijningen@tno.nl 2 Thal
A GaAs HBT Low Power 24 GHz Downconverter with On-Chip Local-Oscillator
Proceedings of the 1st European Microwave Integrated Circuits Conference A GaAs HBT Low Power 24 GHz Downconverter with On-Chip Local-Oscillator C. Meliani, M. Huber*, G. Boeck*, and W. Heinrich Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), 12489 Berlin / Germany Email: meliani@fbh-berlin.de *Technische Universität Berlin, Microwave Engineering HFT 5-1, Einsteinufer 25, 10587 Berlin /
A 100W Class-E GaN HEMT with 75% Drain Efficiency at 2GHz
Proceedings of the 1st European Microwave Integrated Circuits Conference A 100W Class-E GaN HEMT with 75% Drain Efficiency at 2GHz Norihiko Ui and Seigo Sano Eudyna Devices Inc. 1000 Kamisukiawara, Showa-cho Nakakoma-gun Yamanashi-ken 409-3883 Japan Tel: +81-55-275-4411, Fax: +81-55-268-0244, n.ui@eudyna.com Tel: +81-55-275-4411, Fax: +81-55-268-0244, s.sano@eudyna.com Abstract-- A 100W Class-E G
Analytical Solution in Complicated Volumes for Detailed Compact Thermal Model Construction
Proceedings of the 1st European Microwave Integrated Circuits Conference Analytical Solution in Complicated Volumes for Detailed Compact Thermal Model Construction W. Batty, Filtronic Compound Semiconductors Ltd., Newton Aycliffe, Co. Durham, DL5 6JW, UK, Email: bill.batty@filcs.com, Telephone: +44 1325 306315. Abstract-- Original recursive construction and series acceleration techniques are pres
Frequency-Domain Physics-Based Analysis of Semiconductor Devices by a Spectral-Balance Approach
Proceedings of the 1st European Microwave Integrated Circuits Conference Frequency-Domain Physics-Based Analysis of semiconductor devices by a Spectral-Balance approach Giorgio Leuzzi, Vincenzo Stornelli Dept. of Electrical Engineering, University of L'Aquila, Italy E-mail: leuzzi@ing.univaq.it, stornelli@ing.univaq.it Tel.:+39 0862 434444 Abstract - In this work, the frequency-domain Spectral Ba
Detailed Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using Waveform Measurements
Proceedings of the 1st European Microwave Integrated Circuits Conference DETAILED ANALYSIS OF DC-RF DISPERSION IN AlGaN/GaN HFETs USING WAVEFORM MEASUREMENTS Chris Roff, Peter McGovern, Johannes Benedikt and Paul J. Tasker R.S. Balmer,* D.J. Wallis,* K.P. Hilton,* J.O. Maclean,* D.G. Hayes,* M. J. Uren* and T. Martin* Cardiff School of Engineering, Cardiff University, Cardiff, UK. Email: roffc@cf
Temperature Analysis of AlGaN/GaN High-Electron-Mobility Transistors Using Micro-Raman Scattering Spectroscopy and Transient Interferometric Mapping
Proceedings of the 1st European Microwave Integrated Circuits Conference Temperature analysis of AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy and Transient Interferometric Mapping E. Pichonat1, J. Kuzmik2, S. Bychikhin2, D. Pogany2, M.A. Poisson3, B. Grimbert4, C. Gaquière4 LASIR UMR 8516 USTL, 59655 Villeneuve d'Ascq cedex, France, Tel : 33 (0)3 20 43 66
Advanced High Power Amplifier Chain for X-Band T/R-Modules Based on GaN MMICs
Proceedings of the 1st European Microwave Integrated Circuits Conference Advanced High Power Amplifier Chain for X-Band T/R-Modules based on GaN MMICs P. Schuh , R. Leberer , H. Sledzik , M. Oppermann , B. Adelseck, H. Brugger , R. Quay , M. Mikulla and G. Weimann EADS Deutschland GmbH, Defence Electronics, W¨ rthstr. 85, 89077 Ulm, Germany o Fraunhofer Institute of Applied Solid-State Physics