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4-GHz Fully Monolithic SiGe HBT QVCO Using Superharmonic Coupling Topology
Proceedings of the 1st European Microwave Integrated Circuits Conference 4-GHz Fully Monolithic SiGe HBT QVCO Using Superharmonic Coupling Topology S. C. Tseng, C. C. Meng, Y. W. Chang and G. W. Huang* Department of Communication Engineering, National Chiao Tung University, Hsin-Chu, Taiwan, R.O.C. *National Nano Device Laboratories, Hsin-Chu, Taiwan, R.O.C. Abstract--This paper demonstrates a 4
Low-Voltage, Low-Power and High-Gain Mixer Based on Unbalanced Mixer Cell
Proceedings of the 1st European Microwave Integrated Circuits Conference Low-voltage, Low-power and High-gain Mixer Based on Unbalanced Mixer Cell No Gil Myoung1, Ho Suk Kang1, Seok Tae Kim1, Byoung Gun Choi2, Seong-Su Park2, and Chul Soon Park1 1 School of Engineering, Information and Communications University (ICU), 103-6 Munji, Yuseong, Daejeon 305-714, Korea 2 Electronics and Telecommunicat
A Novel Power Plane Topology for Suppressing Parallel-Plate-Resonance Modes in High Speed Printed Circuit Boards
Proceedings of the 1st European Microwave Integrated Circuits Conference A Novel Power Plane Topology for Suppressing Parallel-Plate-Resonance Modes in High Speed Printed Circuit Boards Seung-Seok Oh, Jung-Min Kim, Jong-Gwan Yook Dept. of Electrical and Electronic Eng., Yonsei Univ., Korea. Tel: +82-2-2123-3565, E-mail: jgyook@yonsei.ac.kr Abstract-- This paper presents a new power plane design m
Electromagnetic-Thermal Analysis for Inductances and Eddy Current Losses of On-Chip Spiral Inductors on Lossy Silicon Substrate
Proceedings of the 1st European Microwave Integrated Circuits Conference Electromagnetic-Thermal Analysis for Inductances and Eddy Current Losses of On-chip Spiral Inductors on Lossy Silicon Substrate Kai Kang1, 2, 3, Le-Wei Li1, Saïd Zouhdi2, Jinglin Shi3 and Wen-Yan Yin4 1 2 Department of Electrical & Computer Engineering, National University of Singapore, Singapore 119260; LGEP-Supélec, Gif-S
A Sub-1 V 1.6 GHz CMOS VCO with 29% Tuning Range
Proceedings of the 1st European Microwave Integrated Circuits Conference A Sub-1 V 1.6 GHz CMOS VCO with 29 % Tuning Range Wang-Chi CHENG, Cheong-Fat CHAN, Kong-Pang PUN and Chiu-Sing CHOY Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR Email: {wccheng, cfchan, kppun, cschoy} @ee.cuhk.edu.hk Abstract--This paper presents the design and measur
Design of a Fully Integrated Switchable Transistor CMOS LNA for 2.1 / 2.4 GHz Application
Proceedings of the 1st European Microwave Integrated Circuits Conference Design of a Fully Integrated Switchable Transistor CMOS LNA for 2.1 / 2.4 GHz Application Wang-Chi CHENG(1), Jian-Guo MA(2), Kiat-Seng YEO(2) and Manh-Anh DO(2) (1) Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR (2) School of Electrical and Electronic Engineering, Nanya
A Non-Quasi-Static, Relaxation-Time Small-Signal HEMT Model Compatible with Large-Signal Modeling
Proceedings of the 1st European Microwave Integrated Circuits Conference A Non-Quasi-Static, Relaxation-Time Small-Signal HEMT Model Compatible with Large-Signal Modeling Wolfram C. Stiebler Raytheon RF Components, Andover, MA, 01810, USA Abstract -- A non-quasi-static, relaxation-time small-signal HEMT model is proposed that is fully compatible with largesignal modeling. The small-signal model i
Compact RF Modeling of Multiple-Gate MOSFETs
Proceedings of the 1st European Microwave Integrated Circuits Conference Compact RF Modeling of Multiple-Gate MOSFETs B.Iñiguez, A. Lázaro, O. Moldovan Dept. of Electronics, Electrics, and Automatic Engineering, Universitat Rovira i Virgili, 43007Tarragona, Spain. Fax. 34-977558521 Phone. 34-977558668 e-mail: benjamin.iniguez@urv.net Abstract -- We present a compact modeling scheme for multiple-g
Simplified RF-MEMS Switches Using Implanted Conductors and Thermal Oxide
Proceedings of the 1st European Microwave Integrated Circuits Conference Simplified RF-MEMS Switches Using Implanted Conductors and Thermal Oxide Christian Siegel1, Volker Ziegler1, Bernhard Schönlinner1, Ulrich Prechtel1 and Hermann Schumacher2 2 EADS Germany, Corporate Research Centre, Munich, D81663, Germany, University of Ulm, Dept. of Electron Devices and Circuits, Albert Einstein Allee 45,
Compact Electro-Thermal Modelling and Simulation of InP HBT Based on the Local Reference Concept
Proceedings of the 1st European Microwave Integrated Circuits Conference Compact Electro-thermal Modelling and Simulation of InP HBT Based on the Local Reference Concept J. Ding ×+ , D. Linton × , D. Smith * , M. Steer × The Institute of ECIT, Queens University Belfast, Northern Ireland Science Park, Queen's Road, Queen's Island, Belfast, BT3 9DT, UK Department of Electrical and Computer Engine