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A Very Low Cost Ku-Band 2W Power Amplifier MMIC Using a Plastic-Molded QFN Package
Proceedings of the 1st European Microwave Integrated Circuits Conference A Very Low Cost Ku-Band 2W Power Amplifier MMIC using a Plastic-Molded QFN Package Akira Akiyama, Tadayuki Shimura, Tomio Sato and Yuichi Hasegawa Eudyna Devices Inc., 1000 Kamisukiahara, Showa-cho, Nakakomagun, Yamanashi 409-3883, Japan Abstract -- A low cost molded MMIC in a QFN package is designed and fabricated for a Ku-
A Multi Channel Down-Converter Module Exploiting Recent Advances in Multi Layer RF Packaging Techniques
Proceedings of the 1st European Microwave Integrated Circuits Conference A Multi Channel Down-converter Module Exploiting Recent Advances in Multi layer RF Packaging Techniques S Rumer & M Thornber EADS Astrium Ltd, Anchorage Road, Portsmouth, PO3 5PU, England Tel: +44 02392 705064, E-mail: simon.rumer@astrium.eads.net Tel: +44 02392 708315, E-mail: martin.thornber@astrium.eads.net Abstract -- Re
An Electrothermal Model for GaInP/GaAs Power HBTs with Enhanced Convergence Capabilities
Proceedings of the 1st European Microwave Integrated Circuits Conference An Electrothermal Model for GaInP/GaAs Power HBTs with Enhanced Convergence Capabilities O. Jardel+, R. Quéré+, S. Heckmann*, H. Bousbia+, D. Barataud+, E. Chartier**, D. Floriot** + XLIM MITIC, CNRS UMR 6615, Université de Limoges, 7, rue Jules Vallès, 19100 Brive, France *United Monolithic Semiconductor, domaine de Corbev
Advances in GaN-Based Discrete Power Devices for L- and X-Band Applications
Proceedings of the 1st European Microwave Integrated Circuits Conference Advances in GaN-based discrete power devices for L- and X-band applications Joachim Würfl1, Reza Behtash1, Richard Lossy1, Armin Liero1, Wolfgang Heinrich1 and Günther Tränkle1 Klaus Hirche2, G. Fischer3 Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany, e-mail: Joachi
A Physics-Based Nonlinear Model of Microwave P-I-N Diode for CAD
Proceedings of the 1st European Microwave Integrated Circuits Conference A Physics-Based Nonlinear Model of Microwave P-I-N Diode for CAD Emmanuel Gatard1 , Philippe Bouysse1, Rapha¨ l Sommet1 , Raymond Qu´ r´ 1 e ee Jean-Marc Bureau2, Pascal Ledieu2, Michel Stanislawiak3, Cl´ ment Tolant3 e 1 XLIM CNRS IUT GEII, 7 rue Jules Valles, 19100 Brive la Gaillarde, FRANCE, +33 555 867 301. emmanuel.gat
A High Performance 20--42 GHz MMIC Frequency Multiplier with Low Input Drive Power and High Output Power
Proceedings of the 1st European Microwave Integrated Circuits Conference A High Performance 20-42 GHz MMIC Frequency Multiplier with Low Input Drive Power and High Output Power Sushil Kumar and Henrik Morkner Avago Technologies, 350 W. Trimble Road, San Jose, CA 95131, USA Abstract A 20-42GHz output frequency GaAs MMIC frequency doubler chip has been developed that requires low input drive power
An Ultra Compact C-Band 5-Bit MMIC Phase Shifter Based on All-Pass Network
Proceedings of the 1st European Microwave Integrated Circuits Conference An Ultra Compact C-Band 5-Bit MMIC Phase Shifter Based on All-Pass Network Kenichi Miyaguchi, Morishige Hieda, Masatake Hangai, Tamotsu Nishino, Norihiro Yunoue, Yoshinobu Sasaki, and Moriyasu Miyazaki Mitsubishi Electric Corporation 5-1-1 Ofuna, Kamakura-shi, Kanagawa 247-8501, Japan E-mail: Miyaguchi.Kenichi@aj.MitsubishiE
On-Chip Active Gate Bias Circuit for MMIC Amplifier Applications with 100% Threshold Voltage Variation Compensation
Proceedings of the 1st European Microwave Integrated Circuits Conference On-chip active gate bias circuit for MMIC amplifier applications with 100% threshold voltage variation compensation A.P. de Hek, E.B. Busking TNO Defence, Security and Safety, Oude Waalsdorperweg 63, 2509 JG The Hague, The Netherlands, Phone: 31.70.374.0409, Email: peter.dehek@tno.nl Abstract -- In this paper the design and
A Novel High Purity, Highly Efficient, Broadband MMIC Frequency Multiplier Implemented in Metamorphic HEMT Technology
Proceedings of the 1st European Microwave Integrated Circuits Conference A novel high purity, highly efficient, broadband MMIC frequency multiplier implemented in metamorphic HEMT technology Andreas Ådahl and Herbert Zirath Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden Phone: +46-(0)-31-772 50 49, Fax: +46-(0)-31-16 45 13 E-mail: andreas.adahl@mc2.chalme
GaAs Power pHEMT Characterization for Extracting Nonlinear Parameters of Drain Current by Harmonic Measurement
Proceedings of the 1st European Microwave Integrated Circuits Conference GaAs Power pHEMT Characterization for Extracting Nonlinear Parameters of Drain Current by Harmonic Measurement Kuan-Yu Chen and Chien-Chang Huang Department of Electrical Engineering, Yuan Ze University 135, Yuan-Tung Rd., Chung-Li, Taoyuan 320, Taiwan TEL: 886-3-4638800 ext 2432 FAX: 886-3-4554264 E-mail: cch@saturn.yzu.edu