Knowledge Centre
Find a document written by the best international scientists in our secure database.
24776 documents found.
Enhanced Schottky Gate and Pulsed IV Characteristics of AlGaNGaN HEMT on Si with Gate-Annealing and SiNprotect LY1.extunderscore X Passivation
Proceedings of the 1st European Microwave Integrated Circuits Conference Enhanced Schottky Gate and Pulsed IV Characteristics of AlGaNGaN HEMT on Si with Gate-annealing and SiNX Passivation Jin-Cherl Her, Sung-Won Kim, Kyung-Chul Jang, Gyung-Seon Seol, Min-Koo Han, Jae-Eung Oh* and Kwang-Seok Seo Seoul National University, School of Electrical Engineering and Computer Science, San 56-1 Shillim-do
40nm Inprotect LY1.extunderscore 0.7GaAs HEMTs with Novel HSQ Based T-Gate Process
Proceedings of the 1st European Microwave Integrated Circuits Conference 40nm In0.7GaAs HEMTs with Novel HSQ Based T-gate Process Sung-Won Kim, Gyung-Seon Seol, Jin-Churl Her, Kyung-Chul Jang, and Kwang-Seok Seo Seoul National University, School of Electrical Engineering and Computer Science, San 56-1 Shillim-dong Kwanak-gu Seoul 151-742, Republic of Korea Tel: +82-2-877-0298, Fax: +82-2-887-6575
Broadband Active and Passive Balun Circuits: Functional Blocks for Modern Millimeter-Wave Radio Architectures
Proceedings of the 1st European Microwave Integrated Circuits Conference Broadband Active and Passive Balun Circuits: Functional Blocks for Modern Millimeter-Wave Radio Architectures Alberto Costantini, Ben Lawrence, Simon Mahon, James Harvey, Gerry McCulloch, Alexandre Bessemoulin Mimix Broadband Sydney Design Centre, Level 13, 80 Mount Street, North Sydney, NSW, Australia Abstract -- This paper
4--8 GHz Low Noise Amplifiers Using Metamorphic HEMT Technology
Proceedings of the 1st European Microwave Integrated Circuits Conference 4-8 GHz Low Noise Amplifiers using metamorphic HEMT Technology Matthew Kelly, Iltcho Angelov, J. Piotr Starski, Niklas Wadefalk, and Herbert Zirath Microwave Electronics Laboratory, Chalmers University of Technology, Gothenburg, SE-412 96, Sweden Abstract -- This paper describes two metamorphic high electron mobility transis
Advanced 3D Packaging Using Novel Liquid Crystalline Polymer Based Substrates
Proceedings of the 1st European Microwave Integrated Circuits Conference Advanced 3D Packaging using Novel Liquid Crystalline Polymer Based Substrates Camil-Daniel Ghiu, Sidharth Dalmia, Jack Vickers, Larry Carastro, Winston Czakon, Venky Sundaram*, George White Jacket Micro Devices, Atlanta, Georgia, 30308, USA * Packaging Research Center, Georgia Institute of Technology, Atlanta, Georgia, 30332
A 4.5--5.8 GHz Differential LC VCO Using 0.35 (mu)m SiGe BiCMOS Technology
Proceedings of the 1st European Microwave Integrated Circuits Conference A 4.5-5.8 GHz Differential LC VCO using 0.35 m SiGe BiCMOS Technology Onur Esame, Ibrahim Tekin and Yasar Gurbuz Sabanci University, Faculty of Engineering and Natural Sciences, Tuzla, 34956, Istanbul, Turkey Tel: ++90(216) 483 9533, e-mail: yasar@sabanciuniv.edu Abstract -- In this paper, design and realization of a 4.55.8
Improved Modified Materka Model for Simulation of Pinch-Off Variation in PHEMT Devices
Proceedings of the 1st European Microwave Integrated Circuits Conference Improved Modified Materka Model for Simulation of Pinch-Off Variation in PHEMT Devices. Paul M. White, Wolfram C. Stiebler and Philip C. Balas Raytheon RF Components, 362 Lowell Street, Andover, MA 01810 USA Abstract An improved Modified Materka I-V model for PHEMT devices is described which enables pinch-off variation to b
A Large-Signal Model of GaN HEMTs for Linear High Power Amplifier Design
Proceedings of the 1st European Microwave Integrated Circuits Conference A Large-Signal Model of GaN HEMTs for Linear High Power Amplifier Design Endalkachew S. Mengistu and Günter Kompa Fachgebiet Hochfrequenztechnik, University of Kassel, Wilhelmshöhe Allee 73, D-34121 Kassel, Germany, Tel: +49-561-804-6528, Fax: +49-561-804-6529, E-Mail: mengistu.es@uni-kassel.de Abstract -- A nonlinear large-
Nonlinear and Memory Characterization of GaAs FET Devices and FET-Based Power Amplifier Circuits
Proceedings of the 1st European Microwave Integrated Circuits Conference Nonlinear and Memory Characterization of GaAs FET Devices and FET-Based Power Amplifier Circuits Jon Santiago1,*, Joaquín Portilla1, and Tomás Fernández2 1 Dept. of Electricity & Electronics, Univ. of the Basque Country, PO Box 644, 48080 Bilbao, Spain * lcbsafej@lg.ehu.es, Tel: +(34) 946013236, Fax: +(34) 946013071 2 Dept
A Novel 5-30GHz Voltage Controlled Variable Attenuator with High Linearity in a Low Cost SMD Compact Package
Proceedings of the 1st European Microwave Integrated Circuits Conference A Novel 5-30GHz Voltage Controlled Variable Attenuator with High Linearity in a Low Cost SMD Compact Package N. Poitrenaud, B. Lefebvre, S. Tranchant, M. Camiade United Monolithic Semiconductors, route départementale 128 BP46, 91401 Orsay Cedex, France email: nicolas.poitrenaud@ums-gaas.com Ph. (33) 1 69 33 03 77 Fax.