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EuMIC: An E-Band Variable Gain Low Noise Amplifier in 90-nm CMOS Process Using Body-Floating and Noise Reduction Techniques

Author: Yunshan Wang, Chun-Nien Chen, Yi-Ching Wu, Huei Wang

Proceedings of the 13th European Microwave Integrated Circuits Conference An E-Band Variable Gain Low Noise Amplifier in 90-nm CMOS Process Using Body-Floating and Noise Reduction Techniques Yunshan Wang, Chun-Nien Chen, Yi-Ching Wu and Huei Wang Department of Electrical Engineering and Graduate Institute of Communication Engineering National Taiwan University, Taipei, Taiwan, 106, R.O.C. {d01942

EuMIC: X Band GaN Based MMIC Power Amplifier with 36.5dBm P(1-dB) for Space Applications

Author: Armagan Gurdal, Burak Alptug Yilmaz, Omer Cengiz, Ozlem Sen, Ekmel Ozbay

Proceedings of the 13th European Microwave Integrated Circuits Conference X band GaN Based MMIC Power Amplifier with 36.5dBm P1-dB for Space Applications Armagan Gurdal1, 2, Burak Alptug Yilmaz1,2, Omer Cengiz1, Ozlem Sen1, Ekmel Ozbay1,2 1 Nanotechnology Research Center, Bilkent University, 06800 Ankara, Turkey Department of Electrical and Electronics Engineering, Bilkent University, 06800 Anka

EuMIC: A 112(mu)W F-Band Standing Wave Detector in 40nm CMOS for Sensing and Impedance Detection

Author: Bart Philippe, Patrick Reynaert

Proceedings of the 13th European Microwave Integrated Circuits Conference A 112 μW F-band Standing Wave Detector in 40nm CMOS for Sensing and Impedance Detection Bart Philippe, Patrick Reynaert KU Leuven, Leuven, Belgium {bart.philippe, patrick.reynaert}@esat.kuleuven.be Abstract — This paper presents an integrated standing wave detector for F-band sensing applications. The standing wave on a tra

EuMIC: EM-Based GaN Transistor Small-Signal Model Scaling

Author: G. van der Bent, A.P. de Hek, Frank E. van Vliet

Proceedings of the 13th European Microwave Integrated Circuits Conference EM-Based GaN Transistor Small-Signal Model Scaling G. van der Bent, A.P. de Hek, F.E. van Vliet TNO, The Hague, The Netherlands gijs.vanderbent@tno.nl intrinsic part and the metallisation, since these resistive effects are not easily included in the EM simulation without detailed knowledge of the technology or without elabo

EuMIC: On Stability Analysis and Loop Oscillation of Multi-Finger GaN FET Cells for High Power Amplifiers

Author: Ammar Issaoun, Petra Hammes, Martin Fagerlind, Francis Chai, Thomas Roedle

Proceedings of the 13th European Microwave Integrated Circuits Conference On Stability Analysis and Loop Oscillation of MultiFinger GaN FET Cells for High Power Amplifiers Ammar Issaoun, Petra Hammes, Martin Fagerlind, Francis Chai, Thomas Roedle Ampleon, Halfgeleiderweg 8, 6534 AV Nijmegen, The Netherlands {ammar.issaoun, petra.hammes, martin.fagerlind, francis.chai, thomas.roedle}@ampleon.com

EuMIC: LDMOS Technology for Power Amplifiers up to 12GHz

Author: S.J.C.H. Theeuwen, H. Mollee, R. Heeres, F. van Rijs

Proceedings of the 13th European Microwave Integrated Circuits Conference LDMOS Technology for Power Amplifiers up to 12 GHz S.J.C.H. Theeuwen, H. Mollee, R. Heeres, and F. van Rijs Ampleon Netherlands, Nijmegen, The Netherlands steven.theeuwen@ampleon.com Abstract — We show the capability of LDMOS technology for power amplifiers at frequencies up to 12 GHz. The frequency roll-off of the RF para

EuMIC: A W-Band Frequency Tripler with Integrated Waveguide Filter Matching

Author: Cheng Guo, Jeff Powell, Xiaobang Shang, Michael J. Lancaster, Jun Xu, Colin Viegas

Proceedings of the 13th European Microwave Integrated Circuits Conference A W-Band Frequency Tripler With Integrated Waveguide Filter Matching Cheng Guo1, Jeff Powell 1, Xiaobang Shang2, Michael J. Lancaster1, Jun Xu3, Colin Viegas4 1 The University of Birmingham, UK National Physical Laboratory, UK 3 University of Electronic Science and Technology of China, China 4 STFC, Rutherford Appleton Lab

EuMIC: Characterization and Electrical Modeling Including Trapping Effects of AlN/GaN HEMT 4x50(mu)m on Silicon Substrate

Author: Mohamed Bouslama, Ahmad Al Hajjar, Raphael Sommet, Farid Medjdoub, Jean-Christophe Nallatamby

Proceedings of the 13th European Microwave Integrated Circuits Conference Characterization and Electrical Modeling including Trapping Effects of AlN/GaN HEMT 4x50μm on silicon substrate Mohamed Bouslama#1, Ahmad Al Hajjar #2, Raphael Sommet #3, Farid Medjdoub *4, Jean-Christophe Nallatamby #5 # Univ.limoges, CNRS, Xlim, UMR 7252, F-19100, Brive IEMN-CNRS, Avenue Henry Poincaré, 59652 Villeneuve d

EuMIC: An E-Band Variable-Gain Amplifier Using a Programmable Attenuator

Author: Kimia T. Ansari, Tyler N. Ross, Morris Repeta

Proceedings of the 13th European Microwave Integrated Circuits Conference An E-band Variable-Gain Amplifier Using a Programmable Attenuator Kimia T. Ansari, Tyler Ross, Morris Repeta Huawei Technologies, Ottawa, Canada {kimia.ansari, tyler.ross, morris.repeta} @huawei.com Abstract — In this paper we present a programmable variable-gain amplifier (VGA) for a 5G demonstration system at E-band. The

EuMIC: State Dependency, Low-Frequency Dispersion, and Thermal Effects in Microwave III-V HEMTs

Author: Friedbert van Raay, D. Schwantuschke, Arnulf Leuther, Peter Bruckner, Detlef Peschel, Rudiger Quay, Michael Schlechtweg, Oliver Ambacher

Proceedings of the 13th European Microwave Integrated Circuits Conference State Dependency, Low-Frequency Dispersion, and Thermal Effects in Microwave III-V HEMTs Friedbert van Raay, Dirk Schwantuschke, Arnulf Leuther, Peter Brückner, Detlef Peschel, Rüdiger Quay, Michael Schlechtweg and Oliver Ambacher Fraunhofer Institute for Applied Solid State Physics (IAF) Tullastr. 72, D-79108 Freiburg, Ger