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EuMIC: High-Power Asymmetrical Three-Way GaN Doherty Power Amplifier at C-Band Frequencies
Proceedings of the 13th European Microwave Integrated Circuits Conference High-Power Asymmetrical Three-Way GaN Doherty Power Amplifier at C-Band Frequencies Edon Derguti†* , Erdin Ture† , Sebastian Krause† , Dirk Schwantuschke† , R¨udiger Quay† , Oliver Ambacher† † Fraunhofer Institute for Applied Solid State Physics (IAF), Freiburg, Germany * Albert-Ludwigs-Universit¨at, Freiburg, Germany edon
EuMIC: A Class E Digital Transmitter for 16-APSK
Proceedings of the 13th European Microwave Integrated Circuits Conference A Class E Digital Transmitter for 16-APSK Gavin T. Watkins Toshiba Research Europe Limited 32 Queen Square, Bristol, BS1 4ND, UK Gavin.watkins@toshiba-trl.com II. CLASS E AMPLIFIERS The class E amplifier is well known for being capable of achieving very high efficiency by shaping its current and voltage waveforms to avoid
EuMIC: First K-Band Capable 12-Bit 6GSps Digital to Analogue Converter
Proceedings of the 13th European Microwave Integrated Circuits Conference First K-band Capable 12-bit 6 GSps Digital to Analogue Converter R. Pilard, J. Duvernay, M. Wingender, F. Bore, K. Salmi, N. Chantier Teledyne e2v, France romain.pilard@teledyne-e2v.com A. Circuit Schematic The circuit is based on the Infineon’s B7HF200 SiGeC HBT bipolar technology [2]. It is composed of a selectable 4:1 or
EuMIC: (Ba,Sr)(Ti,Mn)O3 Perovskite Films for Co-Planar Waveguide Tunable Microwave Phase Shifters
Proceedings of the 13th European Microwave Integrated Circuits Conference (Ba,Sr)(Ti,Mn)O3 Perovskite Films for Co-Planar Waveguide Tunable Microwave Phase Shifters Xingli He#, Ioanna Bakaimi#,Nur Zatil Ismah Hashim#, Yudong Wang#, Ali Mostaed*, Ian M Reaney*, Qi Luo&, Steven Gao&, Brian E. Hayden#, and C.H. Kees de Groot#1 # * Faculty of Engineering & Physical Science, University of Southampton
EuMIC: X-Band GaAs Phase Driver MMIC Optimized for GaN-Based Phased-Array Radar Transmit Chain
Proceedings of the 13th European Microwave Integrated Circuits Conference X-band GaAs Phase Driver MMIC optimized for GaN-based Phased-Array Radar Transmit Chain M. van Heijningen1, J. Essing2, F.E. van Vliet3 # TNO, The Netherlands { marc.vanheijningen, 2jaap.essing, 3frank.vanvliet}@tno.nl 1 Abstract — In the transmit chain of high-power phased-array radars more and more use is made of Galliu
EuMIC: SiGe BiCMOS and RFSOI Technologies for Millimeter-Wave Applications
Proceedings of the 13th European Microwave Integrated Circuits Conference SiGe BiCMOS and RFSOI Technologies for Millimeter-Wave Applications Alvin Joseph, Vibhor Jain, Chaojiang Li#, Randy Wolf, John Ellis-Monaghan, and Arvind Kumar* GLOBALFOUNDRIES, Essex Junction, VT, USA # GLOBALFOUNDRIES, Indiana, USA * GLOBALFOUNDRIES, East Fishkill, NY, USA alvin.joseph@globalfoundries.com system implemen
EuMIC: Fully Integrated Asymmetric Doherty Amplifier Based on Two-Power-Level Impedance Optimization
Proceedings of the 13th European Microwave Integrated Circuits Conference Fully Integrated Asymmetric Doherty Amplifier Based on Two-Power-Level Impedance Optimization Ryo Ishikawa, Yoichiro Takayama, and Kazuhiko Honjo The University of Electro-Comminications, Chofu, Tokyo, Japan {r.ishikawa, y.takayama, honjou}@uec.ac.jp ZDoptCA low ZDoptCA high Output matching for two power levels & biasing
EuMIC: X-Band Low Noise Figure T/R Switch-Module Using a Superconducting T/R Switch
Proceedings of the 13th European Microwave Integrated Circuits Conference X-band Low Noise Figure T/R Switch-Module using a Superconducting T/R Switch Hiroaki Ikeuchi#1, Tamio Kawaguchi#, Noritsugu Shiokawa#, Yuichi Sawahara#, Hiroyuki Kayano# # Wireless System Laboratory, Corporate Research & Development Center, Research & Development Div., Toshiba Corp. 1, Komukai-Toshiba-cho, Saiwai-ku, Kawas
EuMIC: A New Compact Model for Accurate Simulation of RF Noise in Sub-40nm Multi-Finger nMOSFETs
Proceedings of the 13th European Microwave Integrated Circuits Conference A New Compact Model for Accurate Simulation of RF Noise in Sub-40nm Multi-finger nMOSFETs Jyh-Chyurn Guo#1 and Kuo-Liang Yeh#2 Institute of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan 1 jcguo@mail.nctu.edu.tw 2 rexyeh@yahoo.com to explore a new compact model with proven accuracy in high frequenc
EuMIC: A S-Band 3D Surface Mount Packaged SiGe and GaN Tx Module Using Flip-Chip Bonding and a Device Embedded PCB Substrate
Proceedings of the 13th European Microwave Integrated Circuits Conference A S-band 3D Surface Mount Packaged SiGe and GaN Tx Module using Flip-Chip Bonding and a Device Embedded PCB Substrate Kengo Kawasaki, Eigo Kuwata, Hidenori Ishibashi, Tomohiro Yao, Kiyoshi Ishida, Kazuhiro Maeda, Hironobu Shibata, Masaomi Tsuru, Kazutomi Mori, Mitsuhiro Shimozawa, and Hiroshi Fukumoto Mitsubishi Electric Co