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CHARACTERISTIC PARAMETERS OF TRAPATT DIODES

Author: I.W. Mackintosh, R.J. Royds

1973

SILICON IMPATT DIODES FOR OPERATION AT GREATER THAN 50 GHz

Author: F.J. Hilsden, C.M. Butler

1973

SILICON AVALANCHE DIODE WITH AN EPITAXIAL DOUBLE DRIFT STRUCTURE FOR MILLIMETRIC APPLICATIONS

Author: J.V. Bouvet

1973

RECENT ADVANCES IN THE BURNOUT PROPERTIES OF LOW NOISE GALLIUM ARSENIDE SCHOTTKY BARRIER MIXER DIODES

Author: G.H. Swallow, T.H. Oxley, A.M. Hansom

1973

MEASUREMENT OF THE NOISE FIGURE AND ADMITTANCE OF InP TRANSFERRED ELECTRON AMPLIFYING DEVICES

Author: P.W. Braddock, K.W. Gray, R.D. Hodges

1973

NOISE STUDIES ON GUNN DIODES

Author: A. Mircea, J. Magarshack, P. Lesartre, M. Mautref

1973

THE CONTROL OF THE CATHODE CONTACT BARRIER FOR HIGH EFFICIENCY InP OSCILLATORS

Author: L.D. Irving, J.E. Pattison, D.J. Colliver

1973

TIME AVERAGED AND DYNAMIC VOLTAGE DISTRIBUTIONS IN GUNN DEVICES

Author: A. Gopinath, M.S. Hill, P.J. Fentem

1973

GUNN-DIODE SPACE CHARGE MODE ESTABLISHED BY MAGNETORESISTANCE AND NEGATIVE CONDUCTANCE

Author: H. Hartnagel, K.N. Tripathi, T.J. Hutchinson

1973

"LOCALLY TUNED" REFLECTION TYPE IMPATT DIODE AMPLIFIER

Author: G. Salmer, I. Doumbia, B. Carnez, A. Mircea

1973