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ASPECTS ON NOISE IN BARITT DIODES

Author: A. Sjölund, F. Sellberg

METAL-N-P+ AND P+ - N - P+ BARRITT NOISE SIMULATION

Author: J. Christie, B.M. Armstrong, J.A.C. Stewart

THEORETICAL ANALYSIS AND COMPUTER SIMULATION OF DOUBLE SIDED n+ -n-p-p+ TRAPATT DIODE STRUCTURES

Author: M.G. Cottam, S.R. Geraghty

PIN DIODE LIMITER DYNAMICS

Author: R. Garver, F. Reggia, R. Callow

A.9.5. PIN DIODE LIMITER DYNAMICS R. Garver, F. Reggia, & R. Callow Harry Diamond Washington, Laboratories D.C. 2n438 ABSTRACT Theory to limit and experiments level, spike are leakage, presented relating PIN diode junction properties and recovery. SUMMARY Presently the PIN diode. available PIN diode are is limiters made for do not power realize above of the full capability 10 GHz mode. and

20°K - COOLABLE PIN DIODE SWITCH WITH VERY LOW LOSS IN L-BAND

Author: J. Edrich, R. Turner

NOVEL FORMS OF MICROWAVE LIMITER

Author: C.D. Hannaford, J.R. Duncan

CHIP DIODE PHASE SHIFTERS FOR 5.1 AND 15.5 GHz

Author: J.F. White

CHARACTERIZATION OF REFLECTION PHASE MODULATORS USING HYPERBOLIC GEOMETRY

Author: T.A. Dorschner

A HIGH POWER GAAS SCHOTTKY BARRIER IMPATT DIODE IN 30GHZ BAND

Author: M. Migitaka, M. Nakamura, K. Saito, K. Sekine

INFLUENCE OF TRANSVERSE INSTABILITY ON THE EFFICIENCY OF IMPATT DIODES

Author: B.B. van Iperen

INFLUENCE OF TRANSVERSE EFFICIENCY INSTABILITY DIODES ON THE OF IMPATT B.B. van Iperen Philips Research Laboratories Eindhoven-The Netherlands ----------- Abstract. Measuring results of large-signal impedance, ac voltage and Io-Vo characteristics (Vo and Io dc voltage and current resp) on X-band Si Impatt diodes in pulse operation show that the efficiency is limited by saturation of the a