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ANALYSIS OF MIS AND SCHOTTKY SLOW-WAVE MICROSTRIP-LIKE TRANSMISSION LINES
ANALYSIS OF MIS AND SCHOTTKY SLOW-WAVE MISSION LINES K. Sachse, A. Sawicki+ ABSTRACT MICROSTRIP-LIKE TRANS- Conventional and novel slow-wave microstrip-like transmission lines on semiconducting substrate with MIS and Schottkybarrier contact are described and ana lysed using the spectral domain technique and quasistatic approach. The slow-wave factor and attenuation constant, calculated as a fun
EFFECT OF SURFACE ADMITTANCE ON NON-RECIPROCITY IN THICK FILM InSb LOADED SLOT LINE
EFFECT OF SURFACE ADMITTANCE ON NON-RECIPROCITY SLOT LINE IN THICK ~ FILM InSb LOADED By H. BAUDRAND, J.L. AMALRIC, EL KANOUNI, EL BADAOUI ABSTRACT Thick film InSb loaded slot lines on dielectric substrate have been used to generate non-reciprocity in anisotropic media for millimeter waves propagating perpendicular to the direction of a D.C. magnetic field in order to increase the non-recipr
DESIGN CONSIDERATION OF UNIFORM AND PERIODIC COPLANAR SCHOTTKY VARIABLE PHASE SHIFTER
DESIGN CONSIDERATION OF UNIFORM AND PERIODIC COPLANAR SCHOTTKY VARIABLE PHASE SHIFTER Y. Fukuoka and T. Itoh* ABSTRACT Characteristics of both uniform and periodic coplanar Schottky variable phase shifter are investigated. GaAs substrate is assumed, the possibility of the operation of such devices at high frequencies discussed. and is
DISPERSION CHARACTERISTICS IN FIN LINES WITH ONE AND TWO DIELECTRIC LAYERS ARBITRARILY LOCATED IN THE WAVEGUIDE
DISPERSION CHARACTERISTICS IN FIN LINES WITH ONE AND TWO DIELECTRIC ARBITRARILY LOCATED IN THE WAVEGUIDE LAYERS Humberto Cesar Chaves Fernandes* and Attilio Jose Giarola+ ABSTRACT Using an efficient method of analysis the dispersion characteristics in new unilateral fin-line structures have been obtained. It consists of using an equivalent transmission line theory in the spectral domain o
A NEW INTEGRATED WAVEGUIDE TRANSISTOR MOUNT
A NEW INTEGRATED WAVEGUIDE TRANSISTOR MOUNT H. Ebner, J. Opfer and E.G. Schweppe ABSTRACT A novel E-plane transistor mount for use up to the mm-wave range is presented. The quasiplanar waveguide structure developed is made on thin, low dielectric substrate inserted in the E-plane of a rectangular wavequide and incorporates a microstrip, and a slotted( inhomogeneous finline partiallY coated with
CHARACTERISTICS OF FIN LINES WITH ARBITRARY DIMENSIONS CALCULATED FROM DATA FOR LINES IN STANDARD ENCLOSURES
OHARACTERISTICS DATA FOR LINES OF FIN LINES WITH ARBITRARY DIMENSIONS CALCULATED FROM IN STANDARD ENCLOSURES W.J.R. Hoefer* ABSTRACT The dispersion characteristics of fin lines with arbitrary dimensions can be obtained from data published for fin lines centered in standard waveguide enclosures. The procedure is based on the transverse resonance method which has been widely used in the past to
CIRCUIT DESIGN and FM NOISE CHARACTERISTICS of 20/30 GHz GaAs MESFET MULTIPLIER CHAINS
CIRCUIT DESIGN and FM NOISE CHARACTERISTICS MESFET MULTIPLIER CHAINS of 20/30 GHz GaAs T.Shima, T.Takano, T.Katoh, H.Sugawara and H.Komizo ABSTRACT Multiplier chains for 20/30 GHz bands were developed using two-stage GaAs MESFET doublers. They provide 11 dBm output power with 4 dB gain at 18 GHz and 4 dBm output power with 5 dB loss at 30 GHz. Circuit design and FM noise characteristics will al
NEW PROGRESS IN A DEVELOPMENT OF A 94 GHz PRETUNED MODULE SILICON IMPATT DIODE
NEW PROGRESS IN A DEVELOPMENT OF A 94 GHz PRETUNED MODULE SILICON IKPATI DIODE M. HEITZMANN*, M. BOUDOT* ABSTRACT Use of low pressure epitaxy and mainly a batch process for integrated heat sink technology, associated with a very low inductive quartz encapsulation giving a radial impedance match, are described. Results for two types of these pretuned modules, one on copper the other on Diamond I
SILICON MONOLITHIC MILLIMETER WAVE SOURCES
SILICON MONOLI1HIC MILLIMETER WAVE SOURCES A. Rosen, P. Stabile, J. l\lcGinn, C. Wuand C. Magee and W. J. Landford * ABSTRACT We have investigated novel techniques for the fabrication of silicon IMPATTdiodes for use at frequencies of up to 300 GHz. The basic techniques described are ion implantation, laser annealing, transmission electron microscopy (TEM), unique secondary ion mass spectrometr
SATELLITE GaAs FET POWER AMPLIFIER REPLACING TWTA IN C-BAND
SATELLITE G.P.Bava, A.Battisti, ABSTRACT This State GaAs FET POWER AMPLIFIER REPLACING TWTA IN C-BAND C.Beccari, F.Tegagni C.Naldi, ** U.Pisani, V.Pozzolo * paper describes the design and as development TWTA of a C-band Solid Power Amplifier (SSPA) to be used replacement in down-link transmitters.