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A MEASUREMENT BASED MODEL OF HEMT TAKING INTO ACCOUNT THE NON LINEAR, NON UNIFORM TRANSMISSION LINE NATURE OF THE CHANNEL AND ITS ASSOCIATED LOW FREQUENCY NOISE SOURCES
A MEASUREMENT BASED MODEL OF HEMT TAKING INTO ACCOUNT THE NON LINEAR, NON UNIFORM TRANSMISSION LINE NATURE OF THE CHANNEL AND ITS ASSOCIATED LOW FREQUENCY NOISE SOURCES A. LALOUE*, M. CAMIADE**, M. VALENZA***, J.C. VILDEUIL***, J.C. NALLATAMBY* ,M. PRIGENT*, J. OBRÉGON****, R. QUÉRÉ* IRCOM - CNRS UMR 6615- University of Limoges - IUT - 7, rue Jules Vallès - 19100 BRIVE - FRANCE E-mail : laloue@bri
FMM and NDC technology-independent finite-memory nonlinear device models: ADS implementation and large-signal validation results
FMM and NDC technology-independent finite-memory nonlinear device models: ADS implementation and large-signal validation results Alberto Costantini , Rudi Paganelli , Pier Andrea Traverso , Giorgia Zucchelli , Alberto Santarelli , Giorgio Vannini , , Fabio Filicori , Vito Antonio Monaco DEIS - University of Bologna, Viale Risorgimento 2, 40136 Bologna, Italy. CSITE/CNR - University of Bologn
A NON QUASI-STATIC NON-LINEAR P-HEMT MODEL OPERATING UP TO MILLIMETRIC FREQUENCIES
A NON QUASI-STATIC NON-LINEAR P-HEMT MODEL OPERATING UP TO MILLIMETRIC FREQUENCIES Daniel Roques, Francis Brasseau, Bernard Cogo, Michel Soulard, Jean-Louis Cazaux ALCATEL SPACE INDUSTRIES, 26, Avenue J.F. Champollion, B.P. 1187 31037 Toulouse Cedex- FRANCE Tel : 33.5.34.35.58.41 - Fax : 33.5.34.35.69.47-E-mail : daniel.roques.@space.alcatel.fr ABSTRACT This paper presents a non-linear p-HEMT mode
SELF CONSISTENT MODELLIN OF PHEMT DEVICES FOR MILLIMETER WAVE SMALL SI NAL, NOISE AND POWER APPLICATIONS.
SELF CONSISTENT MODELLING OF PHEMT DEVICES FOR MILLIMETER WAVE SMALL SIGNAL, NOISE AND POWER APPLICATIONS. D M Brookbanks Marconi Caswell Ltd, Caswell, Towcester, Northants, NN12 8EQ, UK e-mail: mike.brookbanks@gecm.com ABSTRACT Accurate simulation of PHEMT based GaAs MMIC's requires a bias dependent model that can be used in both small signal and large signal analysis and is accurate over a wide
ACCURATE MICROWAVE C ARACTERISATION OF POWER LD-MOSFETs
ACCURATE MICROWAVE CHARACTERISATION OF POWER LD-MOSFETs Franco Giannini*, Fabio Graglia*, Giorgio Leuzzi+, Antonio Serino* * Dip. Ingegneria Elettronica, Università di Roma Tor Vergata, Via di Tor Vergata 110, Roma 00133, Italy + Dip. Ingegneria Elettrica, Università dell'Aquila, Monteluco di Roio, L'Aquila 67040, Italy Phone: +39.06.7259.7351 - Fax: +39.06.7259.7353 - E-mail: leuzzi@ing.univaq.it
NOVEL 4-POINTS INP T PATTERN FOR LARGE BAND NOISE MEAS REMENTS
NOVEL 4-POINTS INPUT PATTERN FOR LARGE BAND NOISE MEASUREMENTS M. De Dominicis, F. Giannini, E. Limiti, G. Saggio Electronic Engineering Dept., University of Roma "Tor Vergata" - Via di Tor Vergata 110 - 00133 Roma - ITALY Tel: +(39) 06 7259 7323; Fax: +(39) 06 7259 7343; E-mail: saggio@uniroma2.it ABSTRACT Four parameters are necessary for a complete characterization of the noise behavior of a li
Industrial GaInP/GaAs Power HBT MMIC Process
Industrial GaInP/GaAs Power HBT MMIC Process H. Blanck*, K. J. Riepe*, W. Doser*, P. Auxemery#, and D. Pons# * United Monolithic Semiconductors GmbH, Wilhelm-Runge-Straße 11, 89081 Ulm, Germany email: blanck@ums-ulm.de # United Monolithic Semiconductors SAS, Route Departementale 128 - BP 46 - 91401 Orsay Cedex France ABSTRACT UMS has developed an industrial power HBT process especially dedicated
DEVELOPMENT AND VERIFICATION OF A NON-LINEAR LOOK-UP TABLE MODEL FOR MOSFETS
DEVELOPMENT AND VERIFICATION OF A NON-LINEAR LOOK-UP TABLE MODEL FOR MOSFETS D. Schreurs, E. Vandamme , C. van Dinther ¡ K.U.Leuven, Div. ESAT-TELEMIC, Kardinaal Mercierlaan 94, B-3001 Leuven, Belgium E-mail: dominique.schreurs@esat.kuleuven.ac.be, Fax: +32-16-321986, Phone: +32-16-321821 IMEC, Div. STDI/CMOS, Kapeldreef 75, B-3001 Leuven, Belgium Philips Semiconductors, Gerstweg 2, NL-6534
Tayloring the Breakdown Voltage in High Electron Mobility Transistor: Theoretical and Experimental Results
Tayloring the Breakdown Voltage in High Electron Mobility Transistor: Theoretical and Experimental Results A. Sleiman, A. Di Carlo, L. Tocca, R. Fiordiponti, and P. Lugli INFM - Dipartimento di Ingegneria Elettronica, Universitá di Roma "Tor Vergata", 110-I-00133 Rome, Italy. E-mail: ammar@venere.eln.uniroma2.it Günther Zandler Walter Schottky Institute, TU-Munich, Am Coulombwall, 85748 Garching,
Influence of recess and epilayers in the 26 40 GHz band HEMT's intermodulation
Influence of recess and epilayers in the 26 40 GHz band HEMT's intermodulation F. Bue, C. Gaquière, X. Hue, B. Boudart, Y. Crosnier, J.C. De Jaeger, B. Carnez*, D. Pons* Institut d'Electronique et de Microélectronique du Nord U.M.R. C.N.R.S. 8520 Département Hyperfréquences et Semiconducteurs Cité scientifique Avenue Poincaré B.P. 69 59652 Villeneuve d'Ascq Cedex France * United Mono