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Size Dependent Influence of the Pad and Gate Parasitic Elements to the Microwave and Noise performance of the 0.35 m n and p type MOSFETs
SIZE DEPENDENT INFLUENCE OF THE PAD AND GATE PARASITIC ELEMENTS TO THE MICROWAVE AND NOISE PERFORMANCE OF THE 0.35 µm n AND p TYPE MOSFETs. P.Sakalas &$, H.Zirath*@, A.Litwin+, M.Schröter& , A.Matulionis$, $ Semiconductor Physics Institute, 2600 Vilnius, Lithuania, paulius@ktl.mii.lt, sakalas@iee.et.tu-dresden.de & Dresden University of Technology, Dresden, Germany schroter@iee.et.tu-dresden.de *
Coupling Between Finite Ground Coplanar Waveguides Embedded in Polyimide Layers for 3D-MMICs on Si
Coupling Between Finite Ground Coplanar Waveguides Embedded in Polyimide Layers for 3D-MMICs on Si George E. Ponchak1, John Papapolymerou2 and Emmanouil M. Tentzeris3 1. NASA Glenn Research Center, Cleveland, OH 44135; george.ponchak@grc.nasa.gov 2. Dept. of Electrical and Computer Engineering, The University of Arizona, Tucson, AZ 85721 3. School of Electrical and Computer Engineering, Georgia In
Alternative Architectures of SOI MOSFET for improving DC and Microwave Characteristics
ALTERNATIVE ARCHITECTURES OF SOI MOSFET FOR IMPROVING DC AND MICROWAVE CHARACTERISTICS M. Dehan, D. Vanhoenacker and J.-P. Raskin Microwave Laboratory, Université catholique de Louvain Place du Levant, 3, B-1348 Louvain-la-Neuve, BELGIUM e-mail: raskin@emic.ucl.ac.be ABSTRACT DC and high frequency characteristics of innovative SOI MOSFET's such as graded channel and dynamic threshold voltage MOS a
38 GHz Antennas on Micromachined Silicon Substrates
38 GHz Antennas on Micromachined Silicon Substrates. Romolo Marcelli(1), Mircea Dragoman(2), Dan Neculoiu(3), Flavio Giacomozzi(4), Alexandru Müller(2), N. Nitescu(2) M2T Microwave Microsystems Technology CNR Institute for Microelectronics and Microsystems, Rome Section Via del Fosso del Cavaliere 100, 00133 Roma, Italy Phone: +39 06 4993.4536; E-mail: r.marcelli@psm.rm.cnr.it National Institu
Low-Loss, Microstrip MEMS Technology for RF Passive Components
LOW-LOSS MICROSTRIP MEMS TECHNOLOGY FOR RF PASSIVE COMPONENTS L. Martoglio*, E. Richalot*, O. Picon*, G. Lissorgues-Bazin**, C. Vasseure** * Université Marne-la-Vallée, Bâtiment Lavoisier, rue Galilée, 77420 Champs-sur-Marne - France, ** 01.60.95.72.79, lmartogl@univ-mlv.fr, 01.60.95.72.60, richalot@univ-mlv.fr, 01.60.95.72.84, picon@univ-mlv.fr Groupe ESIEE, Cité Descartes, 93162 Noisy-le-Grand
Distributed MEMS Tunable Filters
DISTRIBUTED MEMS TUNABLE FILTERS D. Mercier, P. Blondy, D. Cros, P. Guillon IRCOM, 123 av. Albert Thomas 87060 LIMOGES cedex France mercier@ircom.unilim.fr, pblondy@ircom.unilim.fr ABSTRACT This paper focus on the design of MEMS distributed tunable millimeter wave filters. A two pole filter continuously tunable in bandwidth and in frequency with constant input/output impedance is described. The
Micromachined Magnetostatic Wave Resonators
MICROMACHINED MAGNETOSTATIC WAVE RESONATORS George Sajin(*), Romolo Marcelli(**) (*) National Research and Development Institute for Microtechnologies PO Box 38-160, 72996, Bucharest, Romania. E-mail: gsajin@imt.ro M2 T - Microwave Microsystems Technology, CNR-IMM, Rome Section Via del Fosso del Cavaliere 100, 00133 Rome, Italy. E-mail: r.marcelli@psm.rm.cnr.it ABSTRACT A frequency tunable magne
Phase Noise Analysis of MEMS-Based Phase Shifters
Phase Noise Analysis of MEMS-Based Phase Shifters Gabriel M. Rebeiz Abstract-- The effect of Brownian noise on Micro-Electro-Mechanical (MEMS)-based circuits has been calculated for MEMS-based circuits (phase shifters, delay circuits). The calculations are done for capacitive shunt MEMS switches and metal-to-metal contact series MEMS switches. The phase noise due to Brownian motion is negligible f
A Novel Photonic BandGap (PBG) Structure
A NOVEL PHOTONIC BANDGAP (PBG) STRUCTURE Adnan GÖRÜR, Ceyhun KARPUZ, and Kürat YALÇIN Nide University, Faculty of Engineering and Architectural, Department of Electrical and Electronics Engineering, 51100, Nide, TURKEY a.gorur@superonline.com ABSTRACT - A novel one-dimensional (1-D) photonic bandgap (PBG) structure for microstrip lines is proposed. This new circuit is consisting of cross-gaps and
A Coherent Small/Large Signal FET model Based on Neuronal Architectures
A Coherent Small/Large Signal FET model Based on Neuronal Architectures1 A. Mediavilla, A. Tazón, J.A. García, J.M. Zamanillo, T. Fernandez Dpto. Ingeniería de Comunicaciones ETSI TELECOMUNICACION, University of CANTABRIA Avda. Los Castros, 39005 Santander - SPAIN Phone: +34-942-201490, Fax: +34-942-201488 Email: media@dicom.unican.es ABSTRACT A modular neural network architecture for accurate