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Design of Novel Multilayer Microwave Coupled-Line Structures Using Thick-Film Technology
DESIGN OF NOVEL MULTILAYER MICROWAVE COUPLED-LINE STRUCTURES USING THICK- FILM TECHNOLOGY Zhengrong Tian, Charles Free, Peter Barnwell *, James Wood *, Colin Aitchison Middlesex University, Bounds Green Road, London N11 2NQ, UK, E-mail: T.Zhengrong@mdx.ac.uk * Heraeus Circuit Materials Division, West Conschohoken, PA19246, USA, E-mail: PBarnwell@4cmd.com School of Electronic Engineering, Univers
Microwave Glob Top for Space Applications: A Route to Non Hermiticity
Microwave glob top for space applications : A route to non hermiticity P. MONFRAIX(1), L. ALBO(1), C. DREVON(1), J.L. CAZAUX(1), J.L. ROUX(2) : ALCATEL SPACE INDUSTRIES, 26 avenue J.F. Champollion 31037 TOULOUSE, FRANCE Phone : +33 5 34 35 60 70, Fax : +33 5 34 35 69 47 E-mail : Philippe.Monfraix@space.alcatel.fr (2) : CNES, 31000 TOULOUSE, France (1) Abstract This paper presents the electrical d
Measurement and Simulation of Microwave Noise Transient of InP/InGaAs DHBT with Polyimide Passivattion
Measurement and Simulation of Microwave Noise Transient of InP/InGaAs DHBT with Polyimide Passivattion Yong Zhong Xiong*, Geok-Ing Ng, Hong Wang, Jeffrey S. Fu, and Radhakrishnan K Microelectronics Centre, School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798 *Corresponding author, Tel: (65) 7904234, Fax: (65) 7933318, e-mail: eyzxiong@ntu.edu.sg ABST
Dynamic Large-Signal I-V Analysis and Non-Linear Modelling of ALGAN/GAN HEMTs
DYNAMIC LARGE-SIGNAL I-V ANALYSIS AND NON-LINEAR MODELLING OF ALGAN/GAN HEMTS E. Chigaeva*, N. Wieser*, W. Walthes*, M. Grözing*, and M. Berroth* H. Roll**, O. Breitschädel**, J. Off**, B. Kuhn**, F. Scholz**, and H. Schweizer** * Institute of Electrical and Optical Communication Engineering, University of Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany, Tel.: +49 711 685 7912, Fax: +49
Performance Comparison of HBTs and Quasi E-mode PHEMTs for Single Supply High Efficiency Power Amplifiers
Performance Comparison of HBTs and Quasi E-mode PHEMTs for Single Supply High Efficiency Power Amplifiers Y. Tkachenko, C. Wei, S. Sprinkle, J. Gering, J. Lee, T. Kao, Y. Zhao W. Ho, M. Sun and D. Bartle Alpha Industries. Inc., 20 Sylvan Rd, Woburn, MA 01801 and 1230 Bordeaux Dr, Sunnyvale, CA 94089 Tel: 781-935-5150; E-mail: gtkachenko@alphaind.com Abstract Performance of an HBT and a Quasi Enh
Analysis of Hemt Time-Evolution Characteristics
ANALYSIS OF HEMT TIME-EVOLUTION CHARACTERISTICS Anthony E. Parker and James G. Rathmell Macquarie University, Sydney AUSTRALIA 2109, tonyp@ieee.org The University of Sydney, AUSTRALIA 2006, jimr@ee.usyd.edu.au ABSTRACT A novel transient measurement of the time-evolution of drain characteristics is analyzed to separate thermal and trapping dispersions. The procedure extracts isothermal character
A 2GHz Delta-Sigma Modulator implemented in InP HBT Technology
A 2GHz Delta-Sigma Modulator implemented in InP HBT technology Guillaume Hincelin CSIRO Telecommunications and Industrial Physics, P O Box 76, Epping, NSW 1710 Australia Tel: (61) 2 9372 4378 Fax: (61) 2 9372 4488 Guillaume.Hincelin@tip.csiro.au ABSTRACT A first-order Delta-Sigma () modulator has been fabricated using a 70GHz (fT) AlInAs/GaInAs-InP HBT technology. At a sampling rate of 2GHz, it c
DC to 11 GHz Fully Integrated GaAs Up Conversion Mixer
DC to 11GHz Fully Integrated GaAs Up Conversion Mixer R.H.Witvers*, J.G. Bij de Vaate# ASTRON P.O. Box 2, 7990 AA Dwingeloo, The Netherlands Phone: +31-521-595100 Fax: +31-521-597332 * E-mail: Witvers@astron.nl # E-mail: Vaate@astron.nl 1. ABSTRACT. This paper describes the design and realization of a wide band single balanced fully integrated up-conversion mixer. The mixer has a RF bandwidth fro
High Dynamic Range & Very Low Noise K-band p-HEMT LNA MMIC for LMDS and Satellite Communication
High Dynamic-Range and Very Low Noise K-Band p-HEMT LNA MMIC for LMDS and Satellite Communication M. Hirata*, Y. Mimino, Y. Hasegawa and J. Fukaya Fujitsu Quantum Devices Ltd. Kokubo-Kogyo-Danchi, Showa, Nakakoma, Yamanashi 409-3883, JAPAN *Fujitsu Compound Semiconductor, Inc. 2355 Zanker Road, San Jose, CA 95131, USA, MHirata@fcsi.fujitsu.com Abstract An excellent noise figure and high linearit
Unconditional Stabilisation of Common Source and Common Gate MESFET Transistor
UNCONDITIONAL STABILIZATION OF CS and CG MESFET TRANSISTOR Hany F. Hammad , Alois P. Freundorfer, and Yahia M.M. Antar Electrical and Computer Engineering Department, Queen's University, Kingston Ontario, Canada, hammadh@ee.queensu.ca,freund@post.queensu.ca Electrical and Computer Engineering Department, Royal Military College of Canada, antar-y@rmc.ca ABSTRACT Feedback is used to achieve multi-