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W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth
32th European Microwave Conference / GAAS 2002, Session JGM2 W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth Yuh-Jing Hwang(1)(2), Huei Wang(1), and Tah-Hsiung Chu(1)(2) (1) Department of Communication Engineering and Department of Electrical Engineering, National Taiwan University, 1 Roosevelt Rd., Sec. 4, Taipei, 106, Taiwan, R.O.C. (2) Academia Sinica Instit
A Miniaturized 0.5-Watt Q-band 0.25-µm GaAs PHEMT High Power Amplifier MMIC
A Miniaturized 0.5-Watt Q-band 0.25-µm GaAs PHEMT High Power Amplifier MMIC A. Bessemoulin, Member, IEEE, P. Quentin, H. Thomas, and D. Geiger United Monolithic Semiconductors, route départementale 128 BP46, F-91401 Orsay Cedex, France Ph. (+33) 1 69 33 05 46 Fax. (+33) 1 69 33 05 52 email: alexandre.bessemoulin@ums-gaas.com The performance of a very compact power amplifier MMIC for Q-band app
Influence of backside metallization on a coplanar X-band LNA
Influence of backside metallization on a coplanar X-band LNA R. Follmann, G. Langgartner, J. Borkes and I. Wolff IMST GmbH, D47475 Kamp-Lintfort, Germany, e-mail follmann@imst.de H.-P. Feldle EADS Deutschland GmbH, D89070 Ulm, Germany Abstract --In this paper the influence of the backside metallization current matrix is given by on a coplanar X-band low noise amplifier MMIC is described. First,
Broadband Active Phase Shifter GaAs MMIC
Broadband Active Phase Shifter GaAs MMIC Ph. Duême Th. Dequen R. Funck B. Caillon G. Guerbeur THALES AIRBORNE SYSTEMS 2, avenue Gay-Lussac 78851 Elancourt Cedex, France, philippe.dueme@fr.thalesgroup.com A broadband multifunction MMIC, achieving combined amplification and phase shift, has been developed on 2 (3.2 x 4) mm² chips using the UMS PH25 process. The frequency range is as large as
A 6-18 GHz 5-Bit Phase Shifter MMIC Using Series/Parallel LC Circuit
A 6-18 GHz 5-Bit Phase Shifter MMIC Using Series/Parallel LC Circuit Kenichi MIYAGUCHI, Morishige HIEDA, Yukinobu TARUI*, Mikio HATAMOTO*, Koh KANAYA**, Michiaki KASAHARA and Tadashi TAKAGI Information Technology R&D Center, Mitsubishi Electric Corp. 5-1-1 Ofuna, Kamakura-city, Kanagawa 247-8501, Japan E-mail: k-miya@isl.melco.co.jp * Kamakura Works, Mitsubishi Electric Corp. ** High Frequency & O
Evolution of LTCC technology for industrial applications
Evolution of LTCC technology for industrial applications Michel Massiot CMAC Microtechnology, 44 Av de la Glacière, Argenteuil, michelmassiot@cmac.com The LTCC (Low Temperature Cofired Ceramic) technology has been used for years in various applications like automotive (under the hood), data-processing, telecoms, datacoms, military and space, industrial, packaging. The evolution of the materials, p
Characteristics of GaAs HEMTs with Flip-Chip Interconnections
Characteristics of GaAs HEMTs with Flip-Chip Interconnections Naoko Ono, Fumio Sasaki*, Kazuhiro Arai*, and Yuji Iseki Corporate Research & Development Center, Toshiba Corporation *Komukai Operations, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan E-mail: nao.ono@toshiba.co.jp A GaAs HEMT with flip-chip interconnections has been developed. There are various ground
RF System-on-Package (SOP) Development for compact low cost Wireless Front-end systems
RF System-on-Package (SOP) Development for compact low cost Wireless Front-end systems S. Pinel, K. Lim, M. Maeng, M.F. Davis, R. Li, M. Tentzeris, and J. Laskar. School of ECE, Georgia Institute of Technology, Atlanta, GA 30332, U.S.A. e-mail: pinel@ece.gatech.edu Abstract: This paper presents the development of RF System-on-Package (SOP) architectures for compact and low cost wireless radio fron
HTCC based Ku/IF/BB Down Converter for satellite on board processing applications
HTCC based Ku/IF/BB Down Converter for satellite on board processing applications M.C.Comparini*, C.Leone*, P.Montanucci*, M.Tursini** *Alenia Spazio S.p.A., Equipment Engineering Unit Via Saccomuro 24, 00131 Roma, Italy **Alenia Spazio S.p.A., Microelectronic Technology Unit V. Pile 60, 67100 L'Aquila, Italy Phone: +39 06 41512488 Fax: +39 06 41512507 Email: c.leone@roma.alespazio.it Abstract: T
Broadband Multi-State Electronic Impedance Tuner for On-Wafer Noise Parameter Measurement
Broadband Multi-State Electronic Impedance Tuner for On-Wafer Noise Parameter Measurement D. Pienkowski*, W. Wiatr** ´ * ** Technical University of Berlin, Einsteinufer 25, 10587 Berlin, Germany, pienkows@mwt.ee.tu-berlin.de Warsaw University of Technology, Nowowiejska 15/19, 00-665 Warszawa, Poland, wiatr@ise.pw.edu.pl Novel multi-state impedance tuner for use in on-wafer noise-parameter measur