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Mixer Technologies for Modern Microwave and Wireless Systems
Mixer Technologies for Modern Microwave and Wireless Systems Stephen Maas Applied Wave Research, Inc. Abstract: Although mixer design is often viewed as a mature technology, there seems to be no end to the supply of creative new ideas for mixer circuits, or for new needs. Today, the needs of system designers are evolving from high-performance circuits to low-cost, manufacturable, and integrable de
Millimeter-Wave and Terahertz Devices Based on MEMS Concepts
Millimeter-Wave and Terahertz Devices Based on MEMS Concepts Hans L. Hartnagel Institut fuer Hochfrequenztechnik, Technische Universitaet Darmstadt Merckstr. 25, 64283 Darmstadt, Germany email: hartnagel@hf.tu-darmstadt.de The higher the frequency, the more significant are the losses. Therefore it is important even for semiconductors with relatively large energy gap to remove as much semiconducti
GaAs_PL1_Meliga.PDF
Semiconductor laser sources for datacom and telecom applications: recent trends Marina Meliga Agilent Technologies, marina_meliga@agilent.com A brief review of current options for semiconductor laser sources for different network segments: LAN (Local Area Network), MAN (Metropolitan Area Network) and WAN (Wide Area Network). and tunable sources for WDM systems (used in MAN and WAN) are becoming mo
GaAs_PL1_Cappy.PDF
Nanotechnology : the Next Industrial Revolution ? A. Cappy, D. Stievenard, D. Vuillaume Institut d'Electronique et de Microélectronique du Nord, U.M.R. C.N.R.S. 8520, Cité Scientifique, Avenue Poincaré BP 69, 59652 Villeneuve d'Ascq Cedex, France www.ie mn.univ- lille1.fr The essence of nanotechnology is the ability to work at the molecular level, atom by atom, to create large structures with fu
GaAs_9_Vliet.PDF
Integrated InP circuits and Si TTD for analogue optical beamforming applications F.E. van Vliet, F.L.M. van den Bogaart TNO Physics and Electronics Laboratory (TNO-FEL) P.O. Box 96864 2509 JG The Hague The Netherlands Email: vanvliet@fel.tno.nl Introduction In future microwave systems, there will be an increasing need for wide bandwidths. Electronically steered antennas with bandwidths up to an oc
Optical Control of a Backside Illuminated Thin-Film Metamorphic HEMT
Optical Control of a Backside Illuminated Thin-Film Metamorphic HEMT R. Vandersmissen*, D. Schreurs*, S. Vandenberghe*, and G. Borghs** IMEC, MCP/NEXT, Kapeldreef 75, B-3001 Leuven, BELGIUM, vsmissen@imec.be * Also with E.E. Dept. K.U.Leuven, BELGIUM ** Also with Physics Dept. K.U.Leuven, BELGIUM One of the aspects of the merging of microwave and optical technologies is the use of optical signals
Outline for EuMC Lecture
Considerations in the Design of Electro-Optic Modulators and Drivers for 40 Gb/s and Beyond S. J. Nightingale, M. Philippakis and M. Lovis ERA Technology Ltd, Cleeve Road Leatherhead, Surrey, RH2 7DA, UK steve.nightingale@era.co.uk; mike.philippakis@era.co.uk Abstract This paper describes the physical and electrical models which were developed for a driver amplifier realised on gallium arsenide
Microsoft Word - paper_2.doc
Modelling of thermal dispersive effects in electron devices based on an equivalent voltage approach A.Santarelli*, G.Zucchelli*, A.Bellavista*, R.Paganelli**, G.Vannini°, F.Filicori* * DEIS- Università di Bologna,Viale Risorgimento 2 - 40136 Bologna, Italy, e-mail: asantarelli@deis.unibo.it ** CSITE/CNR, Viale Risorgimento 2 - 40136 Bologna, Italy ° Department of Engineering, University of Ferrara
A single relaxation-time non-quasi-static model for monolithic MESFET devices
A single relaxation-time non-quasi-static model for monolithic MESFET devices T.M. Martín-Guerrero, J. Esteban-Marzo*, B. Castillo-Vázquez, C. Camacho-Peñalosa Dpto. Ingeniería de Comunicaciones, E.T.S. Ingeniería de Telecomunicación, Universidad de Málaga, Campus de Teatinos, E-29071 Málaga (Spain), teresa@ic.uma.es * Dpto. Electromagnetismo y Teoría de Circuitos, E.T.S. Ingenieros de Telecomunic
Neural-Based Large-Signal Device Models Learning First-Order Derivative Parameters for Intermodulation Distortion Prediction
Neural-Based Large-Signal Device Models Learning FirstOrder Derivative Parameters for Intermodulation Distortion Prediction F.Giannini, G.Leuzzi*, G.Orengo, P.Colantonio Dipartimento di Ingegneria Elettronica - Università "Tor Vergata" - via Politecnico 1 - 00133 Roma - Italy tel +390672597345 fax 7343(53) - e_mail: orengo@ing.uniroma2.it Dipartimento di Ingegneria Elettrica Università di L'