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Ka-band Coplanar Low-Noise Amplifier Design with Power PHEMTs
Ka-band Coplanar Low-Noise Amplifier Design with Power PHEMTs Sabine Long1, Laurent Escotte1, Jacques Graffeuil1, Philippe Fellon2 and Daniel Roques3 1 LAAS CNRS et Université Paul Sabatier, 7 Av. du Colonel Roche, 31077 Toulouse cedex 4, France e-mail : escotte@laas.fr, phone : 33 (0)5 61 33 64 56, fax : 33 (0) 5 61 33 69 69 2 United Monolithic Semiconductors, 91041 Orsay cedex, France 3 Alcatel
A Low-Voltage Fully-Integrated 4.5-6-GHz CMOS Variable Gain Low Noise Amplifier
A Low-Voltage Fully-Integrated 4.5-6-GHz CMOS Variable Gain Low Noise Amplifier Ming-Da Tsai+, Ren-Chieh Liu*, Chin-Shen Lin+ and Huei Wang*+ Graduate Institute of Communication and * Dept. of Electrical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C. Phone: +886-2-23635251 ext.317 Fax:+886-2-23638247 e-mail:hueiwang@ew.ee.ntu.edu.tw GaAs-based chip is difficult to integrate with C
Dual Band Monolithic AGC Amplifier for Space Applications based on a commercial 0.2 µm PHEMT Technology
Dual Band Monolithic AGC Amplifier for Space Applications based on a commercial 0.2 µm PHEMT Technology Sonia Sotero1, Amparo Herrera1, Javier Cabo 2 1 University of Cantabria, Dpto. Ing. de Comunicaciones, Avnd. Los Castros s/n Santander, 39005, Spain, 34942200918 2 Alcatel Espacio, C/Einstein 7, 28760 Tres Cantos, Madrid, Spain Abstract -- This paper reports the design and measurement of a dua
An Integrated SiGe Dual-band Low Noise Amplifier for Bluetooth, HiperLAN and Wireless LAN Applications
An Integrated SiGe Dual-band Low Noise Amplifier for Bluetooth, HiperLAN and Wireless LAN Applications Mou Shouxian, Ma Jianguo, Yeo Kiat Seng, and Do Manh Anh Centre for Integrated Circuits & Systems, Nanyang Technological University, Singapore 639798 Abstract -- A bandpass low noise amplifier (LNA), which can simultaneously operate at two different frequency bands -- 2.35GHz-2.6GHz and 5GHz-6GHz
An Original SiGe Active Differential Output Power Splitter for Millimetre-wave Applications
An Original SiGe Active Differential Output Power Splitter for Millimetre-wave Applications Christophe Viallon, Eric Tournier, Jacques Graffeuil and Thierry Parra LAAS-CNRS, 7 avenue du Colonel Roche, 31077 Toulouse cedex 4, France Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse, France Abstract -- This paper deals with an original design of an active power splitter featuring a di
Microsoft Word - GaAs Poster Session Zamanillo et al.doc
New Large Signal Model of AlGaAs P-HEMT and GaAs MESFET Under Optical Illumination J.M. Zamanillo, C. Navarro, C. Pérez-Vega, J.A. García, A. Mediavilla and A. Tazón University of Cantabria - Communications Engineering Department (DICOM) Av. de los Castros s/n. 39005, Santander, Spain. E-mail: jose.zamanillo@unican.es As an extension of previous works in the optical -microwave interaction field, t
GaAs_poster_Virk.PDF
A 43-Gbps Lithium Niobate Modulator Driver Module R. S. Virk, M. O'Neal*, E. Camargo, R. Ragle*, S. Notomi M. Gentrup*, E. Franzwa*, G. Hicks*, T. Fukugawara** Fujitsu Compound Semiconductor, Inc. 2355 Zanker Road San Jose, CA 95131, USA e-mail: rvirk@fcsi.fujitsu.com *WJ Communications, Inc. 401 River Oaks Parkway San Jose, CA 95134, USA **Fujitsu Limited 1-1, Kamikodanaka 4-chome Nakahara -ku, K
Fabrication, Testing, and Lumped Element Modeling of Planar Heterostructure Barrier Varactors
Fabrication, Testing, and Lumped Element Modeling of Planar Heterostructure Barrier Varactors M. Saglam1 , E. Leo2 , M. Bozzi2 , L. Perregrini2 , M. Rodr¶ ³guez-Giron¶s1 , P. Arcioni2 , and H. L. Hartnagel1 e Darmstadt University of Technology, Inst. Microwave Engineering, Merckstr. 25, D-64283 Darmstadt, Germany e{mail: msaglam@hf.tu-darmstadt.de, girones@hf.tu-darmstadt.de, hartnagel@hf.tu-darms
Temperature-Dependent Analysis and RF-Model of 10Gbps VCSELs
Temperature-Dependent Analysis and RF-Model of 10Gbps VCSELs S. Nuttinck, E. Gebara*, M. Maeng and J. Laskar Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332, sn46@prism.gatech.edu * Quellan Inc., 250 14th street, Atlanta, GA 10Gbps Vertical Cavity Surface Emitting Lasers (VCSELs) are fully characterized and modeled at various temperatures of oper
GaAs_poster_Massaro.PDF
Negative Uniaxial Optical Behaviour of Laminated Polarization Beam-splitters. A. Massaro*, A. Di Donato**, T. Rozzi Department of Electronics and Automatics, University of Ancona, Via Brecce Bianche, 60131 Ancona, e-mail: MassaroAle@libero.it*, a.didonato@ee.unian.it** In the construction of polarization beam-splitters (PBS) and switches a structure can be employed, that is based on the birefringe