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GAAS: A Balanced InGaP-GaAs Colpitt-VCO MMIC with Ultra-Low Phase Noise
A balanced InGaP-GaAs Colpitt-VCO MMIC with ultra-low phase noise Herbert Zirath*#, Rumen Kozhuharov*, Mattias Ferndahl* *Chalmers University of Technology, Microwave Electronics Laboratory, MC2, SE-412 96, Göteborg, Sweden # Ericsson AB, Microwave and High Speed Electronics Research Centre, Mölndal, Sweden. ABSTRACT -- A balanced VCO-MMIC based on a coupled Colpitt topology with a fully integrat
GAAS: Ballistic Devices Based on T-Branch Junctions and Y-Branch Junctions on GaInAs/AlInAs Heterostructures
Ballistic devices based on T-Branch Junctions and YBranch Junctions on GaInAs/AlInAs heterostructures Galloo J.S.(1), Roelens Y.(1), Bollaert S.(1), Pichonat E.(1), Wallart X.(1), Cappy A.(1), Mateos J. (2), Gonzales T. (2) (1) (2) IEMN-UMR CNRS 8520, Villeneuve d'Ascq, BP 69, 59652, France Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca, Spain Abstract We present processes f
GAAS: Consistent Large-Signal Modeling of SiGe HBT Devices
Consistent Large-Signal Modeling of SiGe HBT Devices Tom K. Johansen, Jens Vidkjær, Viktor Krozer Technical University of Denmark, Oersted-DTU, Department of Electromagnetic Systems, Oersteds Plads 348, 2800 Kgs. Lyngby, Denmark, +45-45253770, tkj@oersted.dtu.dk II. DC PARAMETER E XTRACTION The parameter extraction in this section is concerned with the static VBIC95 model. Because the main current
GAAS: Distortion Characterization and Neural Network Modeling for Microwave Devices
Distortion Characterization and Neural Network Modeling for Microwave Devices F.Giannini, P.Colantonio, G.Orengo, A.Serino Dipartimento di Ingegneria Elettronica - Università "Tor Vergata" - via Politecnico 1 - 00133 Roma - Italy tel. +39.06.7259.7345 fax 7343(53) - e_mail: orengo@ing.uniroma2.it Abstract A new method for characterization of HEMT distortion parameters, which extracts the coe
GAAS: Flip Chip Assembly of a 40-60 GHz GaAs Microstrip Amplifier
F lip Chip Assembly of a 40-60 GHz GaAs Microstrip Amplifier C. Kärnfelt1, H. Zirath1, J. P. Starski1 and J. Rudnicki1 1 Chalmers University of Technology, Microwave Electronics Laboratory, SE 412 96 Göteborg, Sweden, Phone: +46-31-772 1738 performed with the 3D FDTD simulator Quickwave, [4]. The FDTD simulations in Quickwave were rather time consuming and in order to speed the design process we
GAAS: MMIC Implementation of a New Active Pre-Distortion Scheme for Highly Linear Power Amplifier
MMIC implementation of a new active pre-distortion scheme for Highly Linear Power Amplifier Andrea Meazza1, Maurizio Pagani1, Roberto Iommi2, Giuseppe Macchiarella2 2 CoRiTeL, Via Cadorna 73, I-20090, Vimodrone (MI), ITALY, Phone: +39-02-26598639 Politecnico di Milano, Dipartimento di Elettronica e Informazione (PoliEri Lab), Piazza Leonardo da Vinci, 32 20133 Milano, ITALY linearised). On this
GAAS: A Method for PA-Patch Antenna Design Optimisation Oriented to Maximum Efficiency
A Method for PA-Patch Antenna Design Optimisation Oriented to Maximum Efficiency P. Colantonio1, F. Giannini1, E. Limiti1, G. Marrocco2 Dipartimento di Ingegneria Elettronica Dipartimento di Informatica, Sistemi e Produzione Università di Roma Tor Vergata, Via del Politecnico 1, 00133 Roma ITALY email: paolo.colantonio@uniroma2.it 2 1 Abstract -- The integrated design of a high-efficiency stage
GAAS: Low Phase Noise, Very Wide Band SiGe Fully Integrated VCO
Low Phase Noise, Very Wide Band SiGe Fully Integrated VCO Luca Romanò1,3, Vito Minerva1,3, Silvia Cavalieri d'Oro2,3, Marco Politi1,3, Carlo Samori1,3, Maurizio Pagani2,3 Politecnico di Milano (DEI), P.za Leonardo da Vinci 32, 20133 Milano, Italy CoRiTel, Consorzio di Ricerca sulle Telecomunicazioni, Via Cadorna 73, 20090 Vimodrone (MI), Italy 3 PoliERI (joint laboratory Politecnico di Milano-Eric
GAAS: A InGaP/GaAs HBT WLAN Power Amplifier with Power Detector
A InGaP/GaAs HBT WLAN Power Amplifier with Power Detector Kyung Ai Lee, Dong Ho Lee, and Hyun-Min Park, Sang-Hoon Cheon1, Jae-Woo Park1, Hyung-mo Yoo2 and Songcheol Hong Dept. EECS, KAIST 373-1, Guseong-dong, Yuseong-gu, Daejeon, 305-701, Republic of Korea 1 Knowledge.on Inc., 513-37, Eoyang-dong, Iksan, 570-210, Republic of Korea 2 Dynalinear Technologies, Inc. 2860 Zanker Road, Suite 206 San Jos
GAAS: A High Efficiency Rectenna Element Using E-pHEMT Technology
A High Efficiency Rectenna Element using E-pHEMT Technology C. Gómez, José A. García, A. Mediavilla, and A. Tazón. Universidad de Cantabria. Dpto. Ing. Comunicaciones. Avda. Los Castros s/n, 39005 Santander, SPAIN. Phone: (+34) 942 200918. Fax: (+34) 942 201488. Email: carmen@dicom.unican.es Abstract -- In this paper, a high-efficiency rectifying antenna (rectenna) element, based on a novel E-pHEM