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GAAS: Analytical Transport Model of AlGaN/GaN HEMT Based on Electrical and Thermal Measurement
Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement J-C Jacquet1, R. Aubry1, H. Gérard2, E. Delos2, N. Rolland2, Y. Cordier 3, A. Bussutil1, M. Rousseau2 and S. L. Delage1 TIGER : Common Laboratory TRT IEMN : TRT Domaine de Corbeville 91404 Orsay Cedex/France 2 : IEMN Avenue Poincaré 59652 Villeneuve d'Ascq. 3 :CRHEA -CNRS, rue Bernard Gregory, 06560 Valbonne
GAAS: High Efficiency and Linear Dual Chain Power Amplifier without/with Automatic Bias Current Control for CDMA Handset Applications
High Efficiency and Linear Dual Chain Power Amplifier without/with Automatic Bias Current Control for CDMA Handset Applications Hong-Teuk Kim, Ki-Hong Lee, Hyung-Kyu Choi, Ji-Youn Choi, Kyung-Hak Lee, Jin-Pil Kim, Gi-Hyon Ryu, Yong-Joon Jeon, Choong-Soo Han, Keechul Kim, and Kyungho Lee Materials and Devices Laboratory, LG Electronics Institute of Technology 16 Woomyeon-Dong, Seocho-Gu, Seoul 137-
GAAS: High f_T 30nm In_0.7GaAs HEMT's Beyond Lithography Limitations
High fT 30nm In0.7GaAs HEMT's Beyond Lithography Limitations Dae-Hyun Kim1, Hun-Hee Noh1, Seong-Jin Yeon1, Jae-Hak Lee2, Kwang-Seok Seo1 1 ISRC & School of Electrical Engineering and Computer Science (EECS), Seoul National University, San 56-1 Shinlim-Dong, Kwangak-Gu, Seoul, 151-741, Korea, +82-2-880-5451(Ext. 237), vtsrc3@hanmail.net 2 WAVICS. CO. LTD, Abstract Two types of 30nm In0.7GaAs HE
GAAS: Monolithic AlGaN/GaN HEMT SPDT Switch
Monolithic AlGaN/GaN HEMT SPDT switch Val Kaper1 , Richard Thompson1 , Tom Prunty1 , James R. Shealy1 1 Cornell University, School of Electrical and Computer Engineering, 112 Phillips Hall, Ithaca NY 14853, USA 1-607-257-3257, kaperv@ece.cornell.edu Abstract-- In this summary we present design and experimental results of a monolithic L/S band SPDT switch based on AlGaN/GaN HEMT's. The switch was
GAAS: A Measurement-Based Distributed Large-Signal E/O Circuit Model for High-Speed Electroabsorption Modulators
A measurement-based distributed large-signal E/O circuit model for high-speed electroabsorption modulators F. Cappelluti, M. Pirola and G. Ghione Dipartimento di Elettronica and CERCOM, Politecnico di Torino, corso Duca degli Abruzzi 24, I-10129 Torino, Italy. Phone +39 11 564 4165, Fax +39 11 564 4099, E-mail: federica.cappelluti@polito.it Abstract-- The paper presents a measurement-based larges
GAAS: On the Experimental Calculation of the Conversion Matrix for Sub-Harmonic Mixer
On the experimental calculation of the conversion matrix for sub-harmonic mixer G. Loglio, A. Cidronali, C. Accillaro, M. Usai, I. Magrini, M. Camprini, G. Collodi, G. Manes Dept. Electronics and Telecommunications University of Florence, Florence 50139 Italy; loglio@ing.unifi.it; fax: +39.055.494569 ; tel: +39.055.4796369 Abstract -- This paper introduces experimental observations and theoretical
GAAS: Thermal Memory Effects on the Linearity of a GaAs PHEMT
Thermal Memory Effects on the Linearity of a GaAs PHEMT C.Accillaro, A.Cidronali, F.Zani, G.Loglio, M.Usai, G.Collodi, M.Camprini, I.Magrini, G.Manes Dept. Electronics and Telecommunications, University of Florence, Via S. Marta, 3, Florence, 50139 Italy, acidronali@ing.unifi.it; tel.: +39.055.4796411; fax: +39.055.494569 thermal resistances connected to equivalent voltagecontrolled voltage source
GAAS: DC and Low Frequency Noise Characteristics of SiGe n-MODFET's
DC and Low Frequency Noise Characteristics of SiGe n-MODFET's. A.Rennane1,2, L.Bary1, J.Graffeuil1,2, R.Plana1,2. 2 LAAS-CNRS, 7 avenue du Colonel Roche - 31077 Toulouse. Université Paul Sabatier, 118 route de Narbonne - 31078 Toulouse. arennane@laas.fr, Phone : 00-33-5-61-33-62-09 1 Abstract -- This paper presents an investigation of the low frequency noise properties of SiGe based n MODFET's
GAAS: Identification of a Strongly Nonlinear Device Compact Model Based on Vectorial Large Signal Measurements
Identification of a Strongly Nonlinear Device Compact Model Based on Vectorial Large Signal Measurements M. Camprini1, A. Cidronali1, C. Accillaro1, I. Magrini1, G. Loglio1, G. Collodi1, J. Jargon2, G. Manes1 1 Department of Electronics and Telecommunications, University of Florence, V. S. Marta 3, 50139 Florence, Italy 2 National Institute of Standards and Technology, Boulder, CO 80305 U.S.A. II
GAAS: A K-Band Push-Push VCO MMIC Using Embedded Frequency Doubling Mechanism
A K-Band Push-Push VCO MMIC using embedded frequency doubling mechanism Sang-Hoon Sim, Sangsoo Ko, and Songcheol Hong Korea Advanced Institute of Science and Technology (KAIST), Department of Electrical Engineering and Computer Science (EECS) division of Electrical Engineering, Guseong-dong, Yuseong-gu ,305-701, Daejeon, Republic of Korea, +82-42-869-8071 Abstract -- A K-Band Push-Push VCO MMIC w