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GAAS: SMOS Mission & MIRAS Instrument. Synthetic Aperture Radiometer in Space
SMOS Mission & MIRAS Instrument. Synthetic Apperture Radiometer in Space A. Borges and SMOS-PLM Team1 1 EADS CASA Espacio, Avda. Aragón 404, 28022 Madrid Spain, +34 91 585 78 06 Abstract -- SMOS is the second mission in the Earth Observation Opportunity Programme of ESA. The main objective of the mission is to measure the ocean salinity and soil moisture of the whole Earth with a revisit time of
GAAS: On the Stability of MMIC's Using Transistors with Inductive Source Feedback
On the stability of MMIC's using transistors with inductive source feedback F.E. van Vliet, A. de Boer TNO Physics and Electronics Laboratory, P.O. Box 96864, 2509 JG The Hague, The Netherlands, Email: vanvliet@fel.tno.nl Abstract -- This paper describes potential stability problems occurring in transistor stages with inductive source feedback. These problems occur at very high frequencies, where
GAAS: Advanced Phase Noise Modeling Techniques of Nonlinear Microwave Devices
Advanced Phase noise modeling techniques of nonlinear microwave devices M. PRIGENT, J.C. NALLATAMBY, R. QUERE IUT IRCOM UNIVERSITY OF LIMOGES, 7 RUE JULES VALLÈS, BRIVE, 19100, FRANCE, +(33) 555 867 303 ABSTRACT -- In this paper we present a coherent set of tools allowing an accurate and predictive design of low phase noise oscillators. Advanced phase noise modelling techniques in non linear mi
GAAS: Simulation of Large-Signal Cyclostationary Noise in Microwave Devices: From Physics-Based to Compact Modelling Approaches
Simulation of Large-Signal Cyclostationary Noise in Microwave Devices: from Physics-Based to Compact Modelling Approaches F. Bonani, S. Donati Guerrieri, G. Ghione Politecnico di Torino, Dipartimento di Elettronica, Corso Duca degli Abruzzi 24, 10129 Torino, Italy, Tel. +39 011 5644140, fabrizio.bonani@polito.it Abstract-- The paper presents a review of the available modelling techniques for cycl
GAAS: High Frequency and Low Frequency Noise in Microwave Oscillators
High Frequency and Low Frequency Noise in Microwave Oscillators O. Llopis LAAS-CNRS, 7 avenue du Colonel Roche, 31077 Toulouse, France Abstract -- This paper is a summary of our research in the field of noise in oscillators. An original approach has been developed to check the validity of the theoretical models and also, to investigate some techniques of noise reduction. It is based on open loop (
GAAS: Application of SiGe:C BiCMOS to Wireless and Radar
Application of SiGe:C BiCMOS to Wireless and Radar Wolfgang Winkler, Bernd Heinemann, Dieter Knoll IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany, Phone: +49-(0)-335-5625-150 Abstract -- Heterojunction bipolar transistors with carbon-doped SiGe base layer (SiGe:C HBTs) showing fT and fmax values as high as 200 GHz have been developed and integrated into a 0.25µm CMOS platform. The c
GAAS: SiGe Building Blocks for Microwave Frequency Synthesizers
SiGe Building Blocks for Microwave Frequency Synthesizers Cicero S. Vaucher1, Melina Apostolidou1 , Andrew Farrugia1, Louis Praamsma 2 1 Philips 2 Philips Research Labs, Prof. Holstlaan 4, 5656AA Eindhoven, Netherlands Semiconductors, Gerstweg 2, 6534AE Nijmegen, Netherlands e-mail:cicero.vaucher@philips.com bipolar transistors feature an Inside L-Shaped spacer between the base and emitter which
GAAS: SiGe HBT BiCMOS Technology as an Enabler for Next Generation Communications Systems
SiGe HBT BiCMOS Technology as an Enabler for Next Generation Communications Systems Lawrence E. Larson University of California, San Diego, Department of Electrical and Computer Engineering Center for Wireless Communications La Jolla, CA (858)534-8987 Abstract -- The rapid deployment of next generation wireless communications systems creates a unique opportunity for the semiconductor industry. Hig
GAAS: Compact Modelling of SiGe HBTs
Compact Modelling of SiGe HBTs S. Mijalkovi´ , J.N. Burghartz c Laboratory of High Frequency Technology and Components (HiTeC) Delft Institute of Microelectronics and Submicron Technology (DIMES) Delft University of Technology Mekelweg 4, 2628 CD Delft, The Netherlands Phone: +31(15)2785786, E-mail: slobodan@ieee.org Abstract-- The main goal of this paper is to outline principle ideas and concept
GAAS: SiGe:C HBT Technology for Advanced BiCMOS Processes
SiGe:C HBT technology for advanced BiCMOS processes. P. H. C. Magn´ e, G. A. M. Hurkx, P. Agarwal, W. D. van Noort, J. J. T. M. Donkers, J. Melai, e E. Aksen, T. Vanhoucke, M. N. Vijayaraghavan Philips Research Leuven, Kapeldreef 75, B-3001 Leuven, Belgium, peter.magnee@philips.com Abstract-- In this paper we discuss the present status of SiGe:C heterojunction bipolar transistors (HBTs), together