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GAAS: Microwave Applications of Advanced Semiconductor Technologies
Microwave applications of advanced semiconductor technologies R.P. Mertens*, W. De Raedt, G. Carchon, H.A.C. Tilmans and M. Germain IMEC, MCP-division, Kapeldreef 75, 3001 Leuven, Belgium *also ESAT, KULeuven Abstract New semiconductor technologies, used in passive microwave applications, allow the integration of passives with high quality factors and the fabrication of novel RFMEMS components f
GAAS: Bottom-Up Nanoelectronics
Bottom-up Nanoelectronics Peter Hadley Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands Abstract -- Nanoelectronics is a broad topic that spans molecular devices to silicon field-effect transistors. While the development of nanoscale silicon devices is an important topic, the focus here will be on the challengers to silicon such as molecules, carbon nanotubes
GAAS: Dielectric Material Impact on Capacitive RF MEMS Reliability
Dielectric Material Impact on Capacitive RF MEMS Reliability T. Lisec, C. Huth and B. Wagner Fraunhofer Institute for Silicon Technology (ISIT), Fraunhoferstr. 1, 25524 Itzehoe, Germany Abstract - The influence of different types of dielectrics on the switching behaviour and reliability of capacitive RF MEMS switches fabricated by metal surfacemicromachining is investigated. Sputtered AlN layers
GAAS: An Original Methodology to Assess Fatigue Behavior in RF MEMS Devices
An Original Methodology to Assess Fatigue Behavior in RF MEMS Devices O. Millet1), P. Bertrand2), B. Legrand2), D. Collard2,3), L. Buchaillot2) DELFMEMS IEMN, Avenue Poincaré, Cité Scientifique, 59652, Villeneuve d'Ascq, France 2) IEMN, Silicon Microsystems Group Institute of Electronic, Microelectronic and Nanotechnologies, UMR CNRS 8520 Dept. ISEN, Avenue Poincaré, Cité Scientifique, 59652, Vill
GAAS: RF MEMS Sensitivity to Radiations
RF MEMS Sensitivity to Radiations G. J. Papaioannou1, V. Theonas1, M. Exarchos1 and G. Konstantinidis2 University of Athens, Physics Dpt., Solid State Physics Section Panepistimiopolis Zografos, 15784 Athens, Greece, +30 2107276817 2 IESL FORTH, 71110 Heraklion, Greece 1 Abstract -- Silicon dioxide and silicon nitride as well as other insulating materials are used in micro-electromechanical syste
GAAS: Methodology to Assess the Reliability Behavior of RF-MEMS
Methodology to assess the reliability behavior of RF-MEMS David Dubuc(1,2), Merlijn Van Spengen(3), Samuel Melle (1), Ingrid De Wolf(3) Robert Mertens(3), Patrick Pons(1), Katia Grenier(1), and Robert Plana(1,2) (1) LAAS-CNRS, (2), P. Sabatier University, 7. Avenue du Colonel Roche, 31077 Toulouse Cedex 4, France (3) IMEC, Kapeldreef 75, B-3001, Leuven, Belgium ABSTRACT -- This paper reports on
GAAS: Availability of Enabling Technologies for GaAs-Based Specific Applications
Availability of Enabling Technologies for GaAs-Based Specific Applications N. Khuchua1, Z.Chakhnakia1, N.Kobrava1, R.Melkadze1, T.Lezhneva1, T.Sakharova1, M.Tigishvili1, A.Tutunjan1, N.Tutunjan1, R.Diehl2, P.Tsenes3, Z. Hatzopoulos4 Research and Production Complex (RPC) "Electron Technology" of Tbilisi State University, 13 Chavchavadze Ave., 0179 Tbilisi, Georgia, Phone +095 32 220626 2 III-V Elec
GAAS: Construction of ZnO Devices : Electric and Magnetic Properties
Construction of ZnO devices : electric and magnetic properties H.Tabata1, H.Matsui1, H.Saeki1 and S.Masuda2 1 Osaka University, ISIR-Sanken, 8-1 Mihogaoka, Ibaraki, 567-0047, Japan 2 Conika-Minoruta Co., Takatsuki, Osaka, 569-8503, Japan Zinc oxide is one of the wide band gap semiconductors. By using the ZnO-layer as an active channel layer, transparent transistors (ZnO-TFTs) have been construc
GAAS: Diamond for High Power / High Temperature Electronics
Diamond for High Power / High Temperature Electronics E. Kohn, M. Kubovic, F. Hernandez-Guillen, A. Denisenko Dept. of Electron Devices and Circuits, University of Ulm, D-89081 Ulm, Germany e-mail: kohn@mailix.e-technik.uni-ulm.de, phone: +49 731 50 26151 Abstract - Diamond is a wide bandgap semiconductor with extremely attractive properties but also many technological difficulties. Doping is res
GAAS: SiC and GaN Based Transistor and Circuit Advances
SiC and GaN Based Transistor and Circuit Advances J.W. Palmour1, J.W. Milligan1, J. Henning1, S.T. Allen1, A.Ward1, P. Parikh2, R.P. Smith1, A. Saxler1, M. Moore2, and Y. Wu2 2 Cree, Inc., 4600 Silicon Drive, Durham, NC 27703, USA, 1-919-313-5646 Cree Santa Barbara Technology Center, 340 Storke Road, Goleta, CA 93117, USA, 1-805-968-9460 1 Abstract - Significant progress has been made in the de