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GAAS: InP/InGaAs Resonant Tunneling Diode with Six-Route Negative Differential Resistances
InP/InGaAs Resonant Tunneling Diode with Six-Route Negative Differential Resistances Jung-Hui Tsai1, Yu-Chi Kang1, and Wen-Shiung Lour2 National Kaohsiung Normal University, Department of Physics, 116, Ho-ping 1st Road, Kaohsiung 802, TAIWAN, Republic of China, TEL: +886-7-6051390 2 National Taiwan Ocean University, Department of Electrical Engineering, 2 Peining Road, Keelung 202, TAIWAN, Republi
GAAS: GaAs MMICs for Use in Upconverter Module for Ka-Band OBS Satellite Transponders
GaAs MMICs for use in Upconverter module for Ka-band OBS Satellite Transponders Jin-Cheol Jeong, Dong-Pil Chang, Dong-hwan Shin, In-Bok Yom Global Area Wireless Technology Group, ETRI, 161 Kajong-Dong, Taejon, 305-350, KOREA, +82-42-860-6422 Abstract -- GaAs MMICs has been developed for use in the Upconverter module for On-Board Switching Ka-band Satellite Transponders. There are four kinds of MM
GAAS: Design of Broadband, Highly Integrated, 20-30 GHz and 35-45 GHz MMIC Up-Converters
Design of Broadband, Highly Integrated, 20-30 GHz and 35-45 GHz MMIC Up-converters Emmanuelle Convert, Paul Beasly, Simon Mahon, Anna Dadello, James Harvey Mimix Broadband Inc. 10795 Rockley Road, Houston, Texas 77099, USA Ph. +61 2 9956 3388 - Fax +61 2 9956 3399 email: econvert@mimixbroadband.com Abstract -- The design of broadband, highly integrated up-converters is described. Two up-converters
GAAS: RLC Parasitic Extraction and Circuit Model Optimization for Cu/SiO2-90nm Inductance Structures
RLC Parasitic Extraction and Circuit Model Optimization for Cu/SiO 2-90nm Inductance Structures Hazem Mahmoud Hegazy Technical Marketing Engineer, Mentor Graphics hazem_hegazy@mentor.com Abstract An efficient interconnects modeling and optimization methodology is proposed for multi-GHz clock network design. High frequency effects, including inductance and proximity effects are captured. The resul
GAAS: A 4.8-6 GHz IEEE 802.11a WLAN SiGe-Bipolar Power Amplifier with On-Chip Output Matching
A 4.8-6 GHz IEEE 802.11a WLAN SiGe-Bipolar Power Amplifier with On-chip Output Matching Winfried Bakalski1, Andriy Vasylyev2, Werner Simb¨ rger1 , Marcus K¨ ll1 , Alfons Schmid1, Krzysztof Kitlinski1 u a Infineon Technologies AG, P.O. Box 80 09 49, 81609 Munich, Germany, Tel. +49 89 234 27961, Winfried.Bakalski@infineon.com 2 Brandenburg University of Technology Cottbus, Chair of Circuit Design, C
GAAS: High Gain 110-GHz Low Noise Amplifier MMICs Using 120-nm Metamorphic HEMTs and Coplanar Waveguides
High Gain 110-GHz Low Noise Amplifier MMICs using 120-nm Metamorphic HEMTs and Coplanar Waveguides A. Bessemoulin1,4, P. Fellon1, J. Gruenenpuett1,3, H. Massler2, W. Reinert2, E. Kohn3, and A. Tessmann2 1 2 United Monolithic Semiconductors S.A.S, route départementale 128 BP46, 91401 Orsay Cedex, France FraunhoferInstitute for Applied Solid-state Physics (IAF), Tullastraße 72, D-79108, Freiburg
GAAS: Extraction of Small Signal Equivalent Circuit Model Parameters for Statistical Modeling of HBT Using Artificial Neural
Extraction of Small Signal Equivalent Circuit Model Parameters for Statistical Modeling of HBT Using Artificial Neural H. Taher, D. Schreurs and B. Nauwelaers K.U.Leuven, div. ESAT-TELEMIC, Kasteelpark Arenberg 10, B-3001, Leuven-Heverlee, Belgium, Tel: +32 16 32 85 50, Fax: +32 16 321986, e-mail: hany.taher@esat.kuleuven.ac. Abstract--We found different performances for the same device due to th
GAAS: Low Noise and High Linearity LNA Based on InGaP/GaAs HBT for 5.3 GHz WLAN
Low Noise and High Linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN Seong-Sik Myoung1, Sang-Hoon Cheon2, Jong-Gwan Yook1 1 2 Dept. of Electrical and Electronic Eng. Yonsei Univ., Seoul 120-749, Korea, 82-2-2123-3565 Knowledge*ON Semiconductor Inc., Eoyang-dong, Iksan 570-210, Korea, 82-63-839-1163 II. DESIGN AND IMPLEMENTATION This paper presents a low noise figure and high linearity LNA ba
GAAS: Design and Fabrication of Short Gate-Length Heterostructure Charge Coupled Devices for Transversal Filter Applications
Design and Fabrication of Short Gate-Length Heterostructure Charge Coupled Devices for Transversal Filter Applications Hiang Teik Tan , Ian C. Hunter , Christopher M. Snowden and Richard Ranson 1 1 1 2,3 3 University of Leeds, Institute of Microwaves & Photonics, School of Electronic & Electrical Engineering, LS2 9JT Leeds, United Kingdom 2 University of Surrey, GU2 7XH, Guildford, Surrey, Un
GAAS: Characterization of Various Shaped 5 GHz TFBARs Based on 3D Full-Wave Modeling
Characterization of Various shaped 5 GHz TFBARs Based on 3D Full-wave Modeling Yong-Dae Kim1, Kook-Hyun Sunwoo2 , Sung-Hoon Choa2, Duck-Hwan Kim2, In-Sang Song2, Jong-Gwan Yook1 1 Dept. of Electrical and Electronic Eng., Yonsei Univ., 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea 2 MEMS Lab, Samsung Advanced Insitute of Technology, Mt, 14-1, Nongseo-Ri, Giheung-Eup, Gyeonggi-Do, 449-712,