Knowledge Centre
Find a document written by the best international scientists in our secure database.
24776 documents found.
GAAS: InP DHBT-Based IC Technology for High-Speed Data Communications
InP DHBT-Based IC Technology for High-Speed Data Communications R. Driad, K. Schneider, R. E. Makon, M. Lang, U. Nowotny, R. Aidam, R. Quay, M. Schlechtweg, M. Mikulla, and G. Weimann Fraunhofer Institute of Applied Solid State Physics - IAF, Tullastr. 72, 79108 Freiburg, Germany, (Tel.: 49-761-5159637, Fax: 49-761-5159200; email: driad@iaf.fhg.de) Abstract -- In this paper, we report the achieve
GAAS: A 150 to 220 GHz Balanced Doubler MMIC Using a 50 nm Metamorphic HEMT Technology
A 150 to 220 GHz Balanced Doubler MMIC Using a 50 nm Metamorphic HEMT Technology C. Schwörer, Y. Campos Roca*, A. Leuther, A. Tessmann, M. Seelmann-Eggebert, H. Massler, M. Schlechtweg and G. Weimann Fraunhofer-Institute for Applied Solid State Physics Tullastrasse 72, D-79108, Germany, Phone: ++49 761 5159 486 * University of Extremadura, Avda. de la Universidad, s/n, E-10071 Caceres, Spain Abst
GAAS: Electrical and Structural Properties of Low-Temperature-Grown In_0.53Ga_0.47As on GaAs Using an InGaAlAs Metamorphic Buffer
Electrical and Structural Properties of Low-Temperature-grown In0.53Ga0.47As on GaAs using an InGaAlAs Metamorphic Buffer Seong June Jo, Soo-Ghang Ihn,Tae-Woo Kim, Ki-Ju Yee, Moon-Seop Hwang, Dong-Han Lee, and Jong-In Song* Dep. of Information and Communications, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju, 500-712, Korea Dept. of Physics, Chungnam National
GAAS: W-Band Low-Loss Wafer-Scale Package for RF MEMS
W-Band Low-Loss Wafer-Scale Package for RF MEMS Byung-Wook Min1 , and Gabriel M. Rebeiz2 1 University of Michigan, Ann Arbor, Electrical Engineering and Computer Science 1301 Beal Ave., Ann Arbor, MI 48109, USA, bmin@umich.edu 2 University of California, San Diego, Electrical and Computer Engineering 9500 Gilman Dr., La Jolla, CA 92093, USA, rebeiz@ece.ucsd.edu Abstract-- This paper reports on t
GAAS: A Millimeter-Wave Ultra-Compact Broadband Diode Mixer Using Modified Marchand Balun
A Millimeter-Wave Ultra-Compact Broadband Diode Mixer Using Modified Marchand Balun Pei-Si Wu1, Chin-Shen Lin1, Tian-Wei Huang1, Huei Wang1, Yu-Chi Wang2, and Chan-Shin Wu2 1 Dept. of Electrical Engineering and Graduate Institute of Communication Engineering, National Taiwan University, Taipei,106 Taiwan, R.O.C. E-Mail: hueiwang@ew.ee.ntu.edu.tw 2 WIN Semiconductors Corp., Hwaya Technology Park,
GAAS: Advanced Meander Gate p-HEMT Model for Accurate Harmonic Modeling of Switch MMIC Designs
Advanced Meander Gate p-HEMT Model for Accurate Harmonic Modeling of Switch MMIC Designs M.A. Holm and D.M. Brookbanks Filtronic Compound Semiconductor Ltd., Heighington Lane Business Park, Newton Aycliffe, Co. Durham, United Kingdom DL5 6JW Abstract -- This paper presents a non-linear model of a meander gate p-HEMT for switch design. The model combines a modified Parker-Skellern IV form with a cu
GAAS: An Empirical Large Signal Model for Silicon Carbide MESFETs
An Empirical Large Signal Model for Silicon Carbide MESFETs Ahmed Sayed and Georg Boeck Technische Universitaet Berlin, Microwave Engineering Group, HFT 5-1, Einsteinufer 25, 10587 Berlin, Germany, sayed@mwt.ee.tu-berlin.de, Tel. +49 30 31 42 68 95, Fax. +49 30 31 42 68 93 Abstract -- In this paper, a large signal table-based model for SiC MESFET is presented. A packaged commercially available hig
GAAS: Low Noise, Low Interference Automated Bias Networks for Low Frequency Noise Characterization Set-Up's
Low Noise, Low Interference Automated Bias Networks for Low Frequency Noise Characterization Set-Up's M.Borgarino1, M.Rossi1, F.Fantini1 1 University of Modena and Reggio Emilia, Department of Information Engineering, Via Vignolese 905, 41100 Modena, Italy, +39 059 2056168 In the present work, this limitation has been overcome by replacing the operator with stepper motors to control the DUT bias
GAAS: 50 Gb/s DFF and Decision Circuits in InP DHBT Technology for ETDM Systems
50 Gb/s DFF and decision circuits in InP DHBT technology for ETDM systems A. Konczykowska, F. Jorge, M. Riet, J. Moulu, J. Godin Alcatel-Thales III-V Lab, Route de Nozay, F-91461 Marcoussis, France Fax. +33 1 69 63 17 85, e-mail: agnieszka.konczykowska@alcatel.fr 2 mA/µm². Three Ti/Au interconnection levels, TaN resistors, MIM capacitors and spiral inductors are available to realise the circuit la
GAAS: Extremely High Gate Turn-On Voltage of GaAs Double Camel-Like Gate Field-Effect Transistor
Extremely High Gate Turn-on Voltage of GaAs Double Camel-Like Gate Field-Effect Transistor Jung-Hui Tsai and Yu-Chi Kang National Kaohsiung Normal University, Department of Physics, 116, Ho-ping 1st Road, Kaohsiung 802, TAIWAN, Republic of China, TEL: +886-7-6051390 Abstract -- Extremely high potential barrier height and gate turn-on voltage of a novel GaAs field-effect transistor with n+/p+/n+/p+