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MRF volume 1 issue 4 Cover and Front matter

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A compact semi-lumped tunable complex-impedance transformer

Author: Anne-Laure Perrier, Jean-Marc Duchamp, Olivier Exshaw, Robert Harrison, Philippe Ferrari

This article describes the design and performance of a compact tunable impedance transformer. The structure is based on a transmission line loaded by varactor diodes. Using only two pairs of diodes, the circuit is very small with a total length of only /10. Both the frequency range and the load impedance can be tuned by varying the varactor bias voltages. Our design provides a tunable operating fr

Analysis and design of an efficient, fully integrated 1?8 GHz traveling wave power amplifier in 180 nm CMOS

Author: Joerg Carls, Frank Ellinger, Yulin Zhang, Udo Joerges, Silvan Wehrli

Traveling wave amplifiers (TWAs) offer the advantage of broadband amplification and a closed set of equations that allow deriving the RF gain by means of treating TWAs as discrete transmission line approximations. Up to now, however, the significant losses associated with CMOS integrated inductors have been neglected. This work presents a new approach for determining the transmission line losses a

High permeability and high permittivity heterostructures for the miniaturization of Radiofrequency components

Author: Evangéline Bènevent, Kevin Garello, Dominique Cros, Bernard Viala

This paper discusses on the miniaturization of radiofrequency (RF) front-end components such as half-wavelength resonators based on new magneto-dielectric heterostructures combining high permeability (µ = 150?250) and high permittivity (? = 18?150). Size reduction is evaluated by means of 2-cm-long coplanar waveguides realized with silicon technology and having a resonance frequency of about 3 GHz

Multi-access antenna for an opportunistic radio mobile communication of fourth generation

Author: Walid El Hajj, François Gallée, Christian Person

A new model of two-access reconfigurable antennas for future mobile communication systems is presented in this article. This structure is based on a slot antenna with two separated access ports, isolated and matched at 1 and 2 GHz, respectively. The novelty of this element lies in the fact that first a filtering structure is integrated in the antenna, and then any additional switching or frequency

Study of electromagnetic field stress impact on SiGe heterojunction bipolar transistor performance

Author: Ali Alaeddine, Moncef Kadi, Kaouther Daoud, Hichame Maanane, Philippe Eudeline

This paper deals with the various aspects of electromagnetic field impact modeling on the SiGe heterojunction bipolar transistor (HBT) device for microwave applications. This study differs from conventional HBT device reliability research associated with other stresses. The originality of this study comes from the generation of a localized electromagnetic field using the near-field bench. A coupli

Characterization of a loaded high impedance surface

Author: Fabrice Linot, Xavier Begaud, Michel Soiron, Christian Renard, Michèle Labeyrie

A high impedance surface (HIS) consisting of metallic square patches electrically connected one to each other with resistors is shown. Tunability of the absorption factor is achieved by the resistor value. The absorbing band of the loaded HIS is determined by the phase of the signal reflected by this structure. The main contribution of the paper is to demonstrate the absorption behavior over a wid

Opto-microwave experimental mapping of SiGe/Si phototransistors at 850 nm

Author: Marc D. Rosales, François Duport, Julien Schiellein, Jean-Luc Polleux, Catherine Algani, Christian Rumelhard

This paper presents measurement results providing the mapping of the opto-microwave transfer function performed on an SiGe microwave heterojunction phototransistor (HPT). This measurements will be used to extract a guideline for designing phototransistors. A mapping of the HPT's gain in low frequency helps to estimate the shape of the optical beam used for the measurement. The study also focuses o

Implementation of electrothermal system-level model for RF power amplifiers in Scilab/Scicos environment

Author: Florent Besombes, Raphaël Sommet, Julie Mazeau, Edouard Ngoya, Jean-Paul Martinaud

This paper presents a behavioral electrothermal model implementation for high RF power amplifiers dedicated to the simulation of radar application in the Scilab/Scicos environment. This model, based on the direct coupling between a behavioral electrical model and a physics-based reduced thermal model, allows to predict nonlinear effects, high-frequency memory effects, and thermal effects due to th

Label-free RF biosensors for human cell dielectric spectroscopy

Author: Claire Dalmay, Arnaud Pothier, Mathilde Cheray, Fabrice Lalloue, Marie-Odile Jauberteau, Pierre Blondy

This paper presents an original biosensor chip allowing determination of intrinsic relative permittivity of biological cells at microwave frequencies. This sensor permits non-invasive cell identification and discrimination using an RF signal to probe intracellular medium of biological samples. Indeed, these sensors use an RF planar resonator that allows detection capabilities on less than 10 cells