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50 GHz S-shaped rat-race balun with 1.4 dB insertion loss in a wafer-level chip-size package process
In millimeter-wave CMOS circuits, a balun is useful for connecting off-chip single-end devices and on-chip differential circuits to improve noise immunity. However, an on-chip balun occupies a large chip area. To reduce the chip area required for the on-chip balun, a new rat-race balun using a rewiring technology with a wafer-level chip-size package (W-CSP) is proposed. The W-CSP balun occupies no
Integrated on-chip antennas for communication on and between monolithic integrated circuits
The rate of signal transmission on or between monolithic integrated circuits is limited by the cross-talk and the dispersion due to the wired interconnects. The bandwidth limitations can be overcome by wireless chip-to-chip and on-chip interconnects via integrated antennas. In this work the utilization of the electronic circuit ground planes as radiating elements for the integrated antennas has be
An L-band SiGe HBT differential amplifier with frequency and rejection-level tunable, multiple stopband
An L-band frequency and rejection-level tunable SiGe HBT differential amplifier with dual stopband is presented. To achieve frequency and rejection-level tunable performance, dual LCR-tank circuit with an active load is incorporated into the design of the series feedback loops of the differential amplifier. The active load consists of a varactor diode represented as a variable and a common-emitte
A double H-shaped resonator and its use as an isotropic ENG metamaterial
This paper presents a new planar particle that shows negative effective permittivity under irradiation by an electromagnetic wave. The mutual coupling between the couples of these particles is studied in particular. The response of this particle sensitive to an electric field is strongly anisotropic. The particle is aimed to be used to compose an isotropic epsilon-negative metamaterial in two form
Self-heating phenomena in high-power III-N transistors and new thermal characterization methods developed within EU project TARGET
In the framework of the Top Amplifier Research Groups in a European Team (TARGET) project, we developed a new electrical method for the temperature measurement of HEMTs and performed several unique studies on the self-heating effects in AlGaN/GaN HEMTs. This method, in combination with transient interferometric mapping (TIM), provides a fundamental understanding of the heat propagation in a transi
IJMWT special issue on the European Microwave Week 2008
MRF volume 1 issue 3 Cover and Back matter
MRF volume 1 issue 3 Cover and Front matter
On the losses in substrate-integrated waveguides and cavities
This paper presents a study of losses in substrate-integrated waveguides (SIWs) and cavities. Three mechanisms of losses are considered and separately investigated, namely radiation leakage, ohmic loss, and dielectric loss. A systematic comparison of waveguides with different geometry, operating at different frequencies, is reported. This study permits to give a physical interpretation of the loss