1993 documents found.

A wideband CMOS distributed amplifier with slow-wave shielded transmission lines
Rosa R. Lahiji, Linda P.B. Katehi, Saeed Mohammadi
Published online : 01-02-2011
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A four-stage distributed amplifier utilizing low-loss slow-wave shielded (SWS) transmission lines is implemented in a standard 0.13 ?m Complementary Metal-Oxide-Semiconductor (CMOS) technology. The amplifier when biased in its high current operating mode of I = 46 mA (at V = 2.2 V, P = 101 mW) provides a forward transmission gain of 11.3 ± 1.5 dB with a 3-dB bandwidth of 17 GHz and a gain-bandwidt
Dosimetry of an in vitro exposure system for fluorescence measurements during 2.45 GHz microwave exposure
Mohamad Kenaan, Mihaela G. Moisescu, Tudor Savopol, Diana Martin, Delia Arnaud-Cormos, Philippe Leveque
Published online : 01-02-2011
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An in vitro system for 2.45 GHz microwave (MW) exposure with real-time fluorescence measurements is proposed. This system is specifically designed for the measurement of those biophysical parameters of living cells or membrane models which can be quantified by spectrofluorometric methods (e.g. membrane generalized polarization (GP), membrane fluidity, membrane potential, etc.). The novelty of the
Division by current: a new approach to FET capacitance modeling
Stephen Maas
Published online : 01-02-2011
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This paper introduces a new approach to the modeling of capacitance in field-effect transistor (FET) devices, which we call . It is compared with existing formulations, which we call and . In doing so, it is necessary to normalize the theory of nonlinear capacitances and to clarify a number of matters. These include charge conservation and determination of charge functions from capacitance measur
On the evaluation of the high-frequency load line in active devices
Antonio Raffo, Gustavo Avolio, Dominique M.M.-P. Schreurs, Sergio Di Falco, Valeria Vadalà, Francesco Scappaviva, Giovanni Crupi, Bart Nauwelaers, Giorgio Vannini
Published online : 01-02-2011
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In this work a de-embedding technique oriented to the evaluation of the load line at the intrinsic resistive core of microwave FET devices is presented. The approach combines vector high-frequency nonlinear load-pull measurements with an accurate description of the reactive nonlinearities, thus allowing one to determine the actual load line of the drain?source current generator under realistic con
Including orbital fluctuations in the noise spectrum of autonomous circuits
Fabio L. Traversa, Fabrizio Bonani
Published online : 01-02-2011
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We discuss the impact of orbital fluctuations on the noise spectrum of a free-running oscillator, exploiting a rigorous nonlinear perturbative analysis based on the Floquet theory, and providing evidence of its relevance for high- oscillators.
MRF volume 2 issue 6 Cover and Front matter
Published online : 01-01-2011
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Optimization criteria for power amplifiers
Jacques B. Sombrin
Published online : 01-02-2011
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This paper describes existing and new criteria for comparison and optimization of non-linear power amplifiers such as RF or microwave transmitters. In addition to intermodulation, receiver noise, and losses in the transmission system, the proposed new criteria take into account efficiency or consumed power. This results in the global optimization of a combined signal-to-noise-plus-intermodulation
MRF volume 2 issue 6 Cover and Back matter
Published online : 01-01-2011
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Noise properties of balanced amplifier configurations
E.E.M. Woestenburg
Published online : 01-02-2011
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This paper analyzes the noise properties of balanced amplifier configurations in terms of noise waves and discusses the effect of various amplifier configurations on the noise and signal parameters. It shows how the noise generated in the load on the input coupler of a balanced amplifier deteriorates the amplifiers noise resistance parameter with respect to that of its component amplifiers. The pr
A voltage-mode class-S power amplifier for the 450 MHz band
Andreas Wentzel, Chafik Meliani, Wolfgang Heinrich
Published online : 01-06-2011
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This paper reports on a novel voltage-mode class-S power amplifier for the 450 MHz band, based on GaN?HEMT monolithic microwave integrated circuits (MMICs). It achieves a peak output power of 3.4 W for a single tone at 400 MHz, encoded in standard band-pass delta-sigma modulation with 1.6 Gbps sampling frequency. The corresponding efficiency is 38%, peaking at 52% for 0.5 W output power. In order