Knowledge Centre
Find a document written by the best international scientists in our secure database.
24776 documents found.
Dielectric Charging in Capacitive RF MEMS Switches: The Effect of Dielectric Film Leakage
Dielectric Charging in Capacitive RF MEMS Switches: The Effect of Dielectric Film Leakage Negar Tavasolian1, M. Koutsoureli2, George Papaioannou2, and John Papapolymerou1 1 2 School of ECE, Georgia Institute of Technology, 85 fifth Street NW, Atlanta, GA, 30332, USA University of Athens, Physics Department, Solid State Physics Section, Athens, Greece, 15784 Radio frequency (RF) micro-electromech
Charge trap investigation methodology on RF-MEMS switches
Charge trap investigation methodology on RF-MEMS switches M. Barbato$, V. Giliberto$, A. Massenz$, F. Di Maggio§, M. Dispenza*, P. Farinelli#, B. Margesin%, E. Carpentieri£, U.D'Elia£, I. Pomona§, M. Tuluix, F. Casini#, R. Sorrentino#, E. Zanoni$, G. Meneghesso$ $ University of Padova, Dept. of Information Engineering and IUNET, via Gradenigo 6B - 35131, Padova, Italy, gaudenzio.meneghesso@dei.un
Material Properties Characterization of BiCMOS BEOL Metal Stacks for RF-MEMS Applications
Material Properties Characterization of BiCMOS BEOL Metal Stacks for RF-MEMS Applications M. Wietstruck1, M. Kaynak1, W. Zhang1, D. Wolansky1, S. Kurth2, B. Erler3, and B. Tillack1,4 IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany Tel: (+49) 3355625 609, Email: wietstruck@ihp-microelectronics.com 2 Fraunhofer ENAS, Technologie-Campus 3, 09126 Chemnitz, Germany 3 Polytec GmbH, Polytec P
Design of RF Feedthroughs in Zero-Level Packaging for RF MEMS Implementing TSVs
Design of RF Feedthroughs in Zero-Level Packaging for RF MEMS Implementing TSVs Hamza El Gannudi1, Vladimir Cherman2, Paola Farinelli1, Nga P. Pham2, Lieve Bogaerts2, Harrie A.C. Tilmans2, Roberto Sorrentino1 1 University of Perugia, Dept. of Electronic and Information Engineering, Via G. Duranti, 93, 06125 Perugia, Italy hamza.ghannudi@diei.unipg.it 2 imec, Kapeldreef 75, B-3001 Leuven, Belgium
RF MEMS Switches The Status Compared to its Solid-State Competitor Technologies
RF MEMS Switches The Status Compared to its Solid-State Competitor Technologies B. Schoenlinner In the 1990s and early 2000s, RF MEMS switch technology was regarded as a break through and was celebrated for its outstanding performance compared to conventional RF switch technologies like GaAs FETs and PIN diodes. Today, in 2011, after almost a decade of dedicated research towards reliability, the
High frequency CNT based resonator for DNA detection
High frequency CNT based resonator for DNA detection Alina Cismaru, M. Dragoman, A. Radoi, M. Voicu , A. Bunea, M. Carp, A. Dinescu National Institute for Research and Development in Microtechnology (IMT), P.O. Box 38-160, 023573 Bucharest, Romania Abstract -- The paper presents modeling and measurements of microwave propagation in CNTs based resonator for DNA detection. We report on sensing of a
Terahertz Diode on AlGaN Microcathode
Terahertz Diode on AlGaN Microcathode N. M. Goncharuk Research Institute "Orion", Egena Potie 8a, 03680 Kiev, Ukraine, 38(044)4566071 A tunnel resistance of the potential barrier is inverse to derivative of a current density on voltage. It is expressed for the diode as rt = b/, where = dJ/dF is positive differential emission conductivity of the diode. F is constant electric field in vacuum and b
Quasi-Analog Multi-Step Tuning of Laterally-Moving Capacitive Elements Integrated in 3D MEMS Transmission Lines
Quasi-Analog Multi-Step Tuning of Laterally-Moving Capacitive Elements Integrated in 3D MEMS Transmission Lines U. Shah, M. Sterner, J. Oberhammer KTH- Royal Institute of Technology, Microsystem Technology Lab Department, Osquldas väg 10, SE-100 44 Stockholm, Sweden, Phone: +46-87907782, Email: umers@kth.se Abstract -- This paper reports on multi-position RF MEMS digitally tuneable capacitor conce
An Analogically Tuned Capacitor with RF MEMS Structure.
An Analogically Tuned Capacitor with RF MEMS Structure. Barriere F., Mardivirin D., Pothier A., Crunteanu A. and Blondy P. Xlim Research Institute UMR 6172 University of Limoges / CNRS 123 avenue Albert Thomas, 87060 LIMOGES Cedex, FRANCE Abstract--This paper presents a 102 fF to 18 fF analogically tuned capacitor, based on RF MEMS structure. It is composed of a beam electrostatically actuated
Progresses in manufacturing of acoustic devices for GHz applications based on GaN/Si using Micromachining and Nano-lithographic Technologies
Progresses in manufacturing of acoustic devices for GHz applications based on GaN/Si using micromachining and nano-lithographic technologies A. Muller1, G. Konstantinidis2, D. Neculoiu1, A. Dinescu1, T. Kostopoulos2, A. Stavrinidis2, C. Anton1, D. Dascalu1 1 IMT Bucharest, 32B Erou Iancu Nicolae str.t, 077190, Bucharest, Romania 2 FORTH-IESL-MRG Heraklion, Crete, Greece Surface acoustic wave (SA