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EuMIC: An Integrated Planar Guanella Balun with the Quasi-Coaxial Structure on GaAs Substrate
Proceedings of the 18th European Microwave Integrated Circuits Conference An Integrated Planar Guanella Balun with the Quasi-Coaxial Structure on GaAs Substrate Masaomi Tsuru, Tsukasa Hirai, Yusuke Omori, Naoki Sakai, Kenji Itoh Kanazawa Institute of Technology, Japan tsuru.masaomi@neptune.kanazawa-it.ac.jp Abstract — This paper proposes a planar Guanella balun with the quasi-coaxial structure. T
EuMIC: 60W Stacked-HEMT Based Asymmetric X-Band GaN SPDT Switch for Single Chip T/R Modules
Proceedings of the 18th European Microwave Integrated Circuits Conference 60W Stacked-HEMT Based Asymmetric X-Band GaN SPDT Switch for Single Chip T/R Modules Volkan Erturk#*, Armagan Gurdal#†, Busra Cankaya Akoglu#, Ekmel Ozbay#‡ # Nanotechnology Research Center (NANOTAM), Bilkent University, Turkey School of Electrical and Computer Engineering, Georgia Institute of Technology, USA † Gallium Se
EuMIC: A 182GHz Triple-Stacked Distributed Amplifier in InP HBT Process
Proceedings of the 18th European Microwave Integrated Circuits Conference A 182 GHz Triple-Stacked Distributed Amplifier in InP HBT Process Can Cui#, Phat T. Nguyen#, Nguyen L. K. Nguyen#, Natalie Killeen*, Tyler Kelley#, Alexander Stameroff*, Anh-Vu Pham# # Microwave Microsystems Laboratory, University of California, Davis, USA * Keysight Technologies, USA {ccui, ptng, nlknguyen, tfkelley, ahph
EuMIC: A 2.5W/mm High-Power Density V-Band Power Amplifier Using 150 nm GaN Technology Beyond f_(T)
Proceedings of the 18th European Microwave Integrated Circuits Conference A 2.5 W/mm High-Power Density V-Band Power Amplifier Using 150 nm GaN Technology Beyond f T Bharath Cimbili, Christian Friesicke, Sebastian Krause, Friedbert van Raay, Rüdiger Quay Fraunhofer Institute for Applied Solid State Physics IAF, Germany {bharath.cimbili, christian.friesicke, sebastian.krause, friedbert.van.raay, r
EuMIC: E-Band Downlink GaN PA with a Homogeneous Output Power of 2.7W and a Peak PAE of 32.3%
Proceedings of the 18th European Microwave Integrated Circuits Conference E-band Downlink GaN PA with a Homogeneous Output Power of 2.7W and a Peak PAE of 32.3% Bharath Cimbili*# , Christian Friesicke* , Friedbert van Raay* , Mingquan Bao# , R¨udiger Quay* * Fraunhofer Institute for Applied Solid State Physics (IAF), Germany # Ericsson Research, Ericsson AB, Sweden {bharath.cimbili, christian.fr
EuMIC: 100-(mu)W Cryogenic HEMT LNAs for Quantum Computing
Proceedings of the 18th European Microwave Integrated Circuits Conference 100-μW Cryogenic HEMT LNAs for Quantum Computing Yin Zeng# , Junjie Li# , J¨orgen Stenarson* , Peter Sobis*# , Jan Grahn* # Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden * Low Noise Factory AB, Sweden yzeng@chalmers.se design with an average noise temperature of 2.6 K. Recently,
EuMIC: SiGe BiCMOS Ka-Band Integrated Transmitter for SatCom Phased-Array Applications
Proceedings of the 18th European Microwave Integrated Circuits Conference SiGe BiCMOS Ka-band Integrated Transmitter for SatCom Phased-Array Applications Matteo Fumagalli, Alberto Colzani, Alessandro Fonte R&D Department, SIAE Microelettronica, Italy {matteo.fumagalli, alberto.colzani, alessandro.fonte}@siaemic.com state of the art. Finally, in Section IV, the conclusions are drawn. Abstract — T
EuMIC: Driving Integration in the RF and mmWave Semiconductor Testing Industry
Proceedings of the 18th European Microwave Integrated Circuits Conference Driving Integration in the RF and mmWave Semiconductor Testing Industry Daniel Kather Advantest Europe GmbH, Germany Daniel.Kather@advantest.com Abstract — The semiconductor testing industry always has been driven by pushing the boundaries towards higher performance, broader application range as well as higher levels of in
EuMIC: K-Band Receiver on SiGe BiCMOS Technology for SatCom Phased Array Systems
Proceedings of the 18th European Microwave Integrated Circuits Conference K-band Receiver on SiGe BiCMOS Technology for SatCom Phased Array Systems Alberto Colzani, Matteo Fumagalli, Alessandro Fonte R&D Department, SIAE Microelettronica, Italy {alberto.colzani, matteo.fumagalli, alessandro.fonte}@siaemic.com complete characterization of the manufactured chips are reported. Finally, in Section I
EuMIC: Capacitance RF Characterization and Modeling of 28FD-SOI CMOS Transistors Down to Cryogenic Temperature
Proceedings of the 18th European Microwave Integrated Circuits Conference Capacitance RF Characterization and Modeling of 28 FD-SOI CMOS Transistors down to Cryogenic Temperature Q. Berlingard#*, J. Lugo-Alvarez#, M. Bawedin*, T. Mota-Frutuoso#, C. Durand§, D. Gloria§, P. Galy§, M. Cassé# # CEA-Leti, Univ. Grenoble Alpes, France Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP,