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PHASED ARRAY ANTENNAS
RESISTIVE GATE MOS MICROWAVE SWITCH
S-BAND TRANSISTOR POWER AMPLIFIER
PARALLEL CONNECTION OF POWER TRANSISTORS FOR OCTAVE BANDWIDTHS IN THE 0.2 TO 2 GHz RANGE USING HYBRID TECHNOLOGY.
BROADBAND MICROWAVE FILED-EFFECT TRANSISTOR AMPLIFIERS
A 13/2:1 BROADBAND MICROWAVE FIELD-EFFECT TRANSISTOR AMPLIFIERS* Dr. Walter H. Ku School of Electrical Engineering Cornell University Ithaca, New York 14850 Dr. Paul L. Clouser IBM Federal Systems Division Electronics Systems Center OWego, New York 13827 ABSTRACT With the recent advent of transistors which are capable of operating in the microwave frequencies, both bipolar and field-effect transi