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MOSFET surface Wave detectors for high frequency signal processing
Author: P. Defranould
MOSFET
surface
Wave
detectors
for high
frequency
signal
processing
Ph. Defranould
THOMSON-CSF,
Division
ASM,
06802
Cagnes/Mer
(France)
ABSTRACT.
- The piezoresistance effect in Si-MOSFET structures is used for the detection of Rayleigh surface waves launched on a silicon substrate. The semiconductor devices are MOSFET Nand Pchannel inversion layers, the channel length is along the
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