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HIGH POWER STATIC INDUCTION TRANSISTOR FOR MICROWAVE OPERATION
HIGH POWER STATIC INDUCTION TRANSISTOR FOR MICROWAVE OPERATION Y. Kajiwara, Y. Yukimoto and K. Shirahata A new type of transistor called Static Induction Transistor (SIT) ", by operation of majority carrier injection, " has been successfully microwave a process obtained; watts MHz. high power technique, (1) f verified operation. as a promising By using remarkable device results for a
DYNAMIC TWO-DIMENSIONAL COMPUTER SIMULATION OF THREE-TERMINAL SEMICONDUCTOR DEVICES
DYNAMIC TWO-DIMENSIONAL COMPUTER SIMULATION OF THREE-TERMINAL SEMICONDUCTOR DEVICES S. P. Yu + and W. Tantraporn + Abstract Special schemes for treating device geometry permit the use of the very fast Hockney technique for solving the two dimensional Poisson equation so that dynamics of three-terminal semiconductor devices can be computer simulated economically. Successful simulations of bi
SMALL-SIGNAL PROPERTIES OF CONTROLLED AVALANCHE MICROWAVE SILICON TRANSISTORS.
SMALL-SIGNAL PROPERTIES OF CONTROLLED AVALANCHE MICROWAVE SILICON TRANSIS- TORS . Y. CROSNIER, M. LEFEBVRE, H. GERARD and G. SALMER ~ ABSTRACT: This paper presents a study of the behaviour and capabilities of avalanching microwave transistor amplifiers through measurements carried out on transistors in small signal conditions and with common-base configuration operation. Interesting result
A NEW NOISE GENERATOR: FOR MICROWAVE COMMUNICATION SYSTEMS ERROR RATE MEASUREMENT
A NEW NOISE SUREMENT GENERATOR: FOR MICROWAVE COMMUNICATION SYSTEMS ERROR RATE MEA- Ph. DUPUIS+- M. FACHE - M. ROBINx ABSTRACT For many digital communication function of the noise level is developed for the 1.2 - 1.7 GHz circular waveguide transmission to any microwave communication systems, the measure of the error rate as a fundamental. A new noise generator has been range. Originally
2 DB CONVERSION LOSS MIXER AT 11 GHz USING A PRM CIRCUIT
A NEW LOW NOISE FRONT END FOR MILLIMETER WAVE TRANSPONDERS
A NEW LOW NOISE FRONT END FOR MILLIMETER WAVE TRANSPONDERS . A. D'Ambros~o ~ ABSTRACT Theoretical converters ders The results are also premises and specific and their respect design possible to other considerations solutions. between 14 and 11 GHz , of parametric wave down are analyzed with use on millimeter transpon is considered given of a laboratory and discussed. prototype, operatin
A PROTOTYPE OSCILLATOR CIRCUIT UTILIZING EVANESCENT MODE RESONATORS
A PROTOTYPE OSCILLATOR CIRCUIT UTILIZING EVANESCENT MODE RESONATORS by R. Knochel and K. SchUnemann ABSTRACT: A prototype oscillator circuit is described which uses evanescent mode resonators as housing for active devices. The circuit is applied to voltage controlled oscillators, injection locked oscillators as FM-amplifiers and frequency dividers, and cavity stabilized oscillators. Desig
BIOLOGICAL EFFECTS BY MICROWAVES
BIOLOGICAL EFFECTS BY MICROWAVES Andre-Jean BERTEAUD and Michele DARDALHON ABSTRACT Domestic and industrial applications of microwaves are everyday extended implying protection conditions and safety standards which require a better knowledge of biological effects associated with microwave radiations. Interactions of microwaves with living systems are reviewed on the basis of levels of organi
STATUS AND TRENDS IN MICROWAVE ACOUSTIC DEVICE DEVELOPMENTS
STATUS AND TRENDS IN MICROWAVE ACOUSTIC DEVICE DEVELOPMENTS Kjell A. Ingebrigtsen* ABSTRACT The implementation of the surface acoustic wave technology has transferred microwave acoustic devices from "one of each kind" to a mass production oriented technology. This has provided a new class of devices which are cost competitive with alternative technology in a variety of applications. The prese
CHARACTERISATION OF A NON-LINEAR SATELLITE TRANSISTOR AMPLIFIER IN A SINGLE-CHANNEL-PER-CARRIER LINK
Characterisation of a non-1inear Satellite Transistor in a Single-Channel-Per-Carrier Link W.Kriedte, A.Woode *) ABSTPl\CI' Amplifier The paper describes the testset and the test methods to assess performance of a satellite power amplifier designed for multicarrier .operation. The following specific characteristics are measured: the -1. -2. -3. -4. Single carrier characteristic carrier to Int