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HIGH PERFORMANCE GaAs SCHOTTKY BARRIER DIODES USING A CANTILEVERED METAL CONTACT

Author: D. Boccon-Gibod, P. Harrop

HIGH METAL PERFORMANCE CONTACT GaAs SCHOTTKY BARRIER DIODES USING A CANTILEVERED Dominique BOCCON-GIBOD, Peter HARROP* ABSTRACT A planar Schottky diode of original structure has been developed using a suspended contact between the active diode area and the ohmic contact to increase the device cut-off frequency and make a low cost reliable device. Self-alignment techniques were used to d

FAILURE OF THE CLASSICAL MATHEMATICAL MODEL IN THE ANALYSIS OF LOW-LOSS BAND-LIMITED MIXERS

Author: M.E. Hines

FAILURE OF THE CLASSICAL MATHEMATICAL MODEL IN THE ANALYSIS OF LOW-LOSS BAND-LIMITED MIXERS M. E. Hines ABSTRACT The classical small-signal frequency-domain theory of diode mixers has been repeatedly misapplied for low-loss band-limited circuits. Previously published theoretical results, which describe low-loss limits, are erroneous and misleading. The errors are ascribed to inadmissable matrix

LOW-NOISE MILLIMETER-WAVE SCHOTTKY MIXERS

Author: M.V. Schneider

LOW-NOISE MILLIMETER-WAVE SCHOTTKY MIXERS Martin V. Schneider* ABSTRACT Recent developments in the fields of semiconductor crystal growth and thin film lithography have proven to be useful in constructing millimeter-wave Schottky mixers with very low noise temperatures. These mixers look attractive for use in short-haul communication receivers, imaging radiometers, for detection of trace molecu

RADIOASTRONOMY ON MILLIMETER WAVES

Author: E.J. Blum

LARGE TIME-BANDWIDTH SEZAWA WAVE MZOS CONVOLVERS AND CORRELATORS

Author: J.K. Elliott, F.C. Lo, R.L. Gunshor, R.F. Pierret

L.~RGE TI~E-BANDWIDTH SEZAWA WAVE MZOS CONVOLVERS AND CORRELATORS J. K. Elliott,* F. C. Lo,+ R. L. Gunshor,+ and R. F. Pierret+ ABSTRACT A prototype Sezawa Wave MZOS convolver has been developed which clearly demonstrates the impressive signal processing capability of monolithic MZOS parametric devices. Observed values of electro-mechanical coupling and time-bandwidth product repres

POSSIBILITIES AND LIMITATIONS OF SAW SIGNAL PROCESSING DEVICES: SAW HADAMARD TRANSFORMER

Author: J.C. Rebourg

ACOUSTIC SURFACE WAVE RESONATORS FOR BROADBAND APPLICATIONS

Author: J. Vandewege, P.E. Lagasse, T. Naten, F. Sleeckx, H. Tromp, G. Hoffman

ACOUSTIC SURFACE WAVE RESONATORS FOR BROADBAND APPLICATIONS J. Vandewege, P.E. Lagasse,* T. Naten, F. Sleeckx ** ,H. Tromp, G. Hoffman * ABSTRACT Acoustic surface wave resonators have been used extensively in narrow band applications. In this paper new SAW resonator structures are described, which have the same impedance characteristics over a large band as bulk wave resonators operating at

MAGNETOSTATIC SURFACE WAVE OSCILLATORS AND RESONATORS

Author: J.P. Castera, P. Hartemann

MAGNETOSTATIC SURFACEWAVEOSCILLATORS AND RESONATORS + CASTERA and + P.HARTEMANN * J.P. ABSTRACT Result tic surface an epitaxial about different types of microwave components using magnetostawaves (MSSW) are reported. The waves have been propagated in yitrium iron garnet (YIG) film at GHz frequencies. In a first section, the design and experimental data of delay line oscillators are given. The

THE REFLECTIVE DOT ARRAY - A NEW TECHNIQUE FOR HIGH PERFORMANCE SIGNAL PROCESSING

Author: L.P. Solie

THE REFLECTIVE PROCESSING DOT ARRAY -- A NEW TECHNIQUE FOR HIGH PERFORMANCE SIGNAL L. P. SOLIE ABSTRACT High performance signal processing devices using reflective array (etched groove) devices have been made. These have been used as pulse compression filters in radar systems and more recently as the critical components in a SAW implementation of the chirp transform algorithm. A lower cost

NEW GENERATION 6-GHz 1800 CHANNEL/78 Mbits RADIO SYSTEM

Author: T. Furuya, K. Kinoshita, Y. Kitahara, H. Taguchi, Y. Ito

NEW GENERATION 6-GHz l800 CHANNEL/78 Mbits RADIO SYSTEM T. Furuya, K. Kinoshita, Y. Kitahara, H. Taguchi, Y. Ito /* ABSTRACT A new generation of the all solid-state heterodyne transmitter receiver fitted with a high power GaAs FET (Field Effect Transistor) amplifier with the output power of maximum 5-W and low noise GaAs FET with the receiver noise figure of 3-dB for operation in the 6