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WIDE DETERMINISTIC NULLING BY MEANS OF MULTIPLICATIVE ARRAY TECHNIQUES
WIDE DETERMINISTIC NULLING BY MEANS OF MULTIPLICATIVE ARRAY TECHNIQUES A. FARINA - R. GIUSTO ABSTRACT A method is proposed for suppressing extended clutter of space (e. g. along horizon) by means of an additional lobes. trol array The reduction of a certain theory. of antenna of array sidelobes elements. is obtained The method assessed has been number The system in "a priori" attenuation t
SPACING OPTIMIZATION OF ARRAYS WITH ARBITRARILY DISTRIBUTED ELEMENTS
STRONG SIGNAL SURVIVABILITY DESIGN FOR "LOSSLESS" FEEDBACK AMPLIFIERS
STRONG SIGNAL SURVIVABILITY FEEDBACK DESIGN FOR 8LOSSLESS. Davi d E. Norton AMPLIFIERS ABSTRACT Circuit techniques are presented which protect low noise microwave bipolar transistors from damage caused by overloading signals. These include protection diodes across the emitter-base junction~ diode limiters and stage output limiting. Circuit transient response control is shown to be important.
A WIDEBAND INSTANTANEOUS AUTOMATIC GAIN CONTROL AMPLIFIER
A WIDEBAND INSTANTANEOUS AUTOMATIC GAIN CONTROL AMPLIFIER M. Zisserson, Z. Turski ABSTRACT This paper describes the design and performance of a wideband microwave IAGC amplifier. The amplifier compresses a 35dB dynamic input range (+5dBm to -30dBm) to a nominal level of -15dBm +2dB over a 2.4:1 bandwidth in S band. Second harmonic is at least 20dB below the fundamental. Third order product
THE STUDY OF THE THIRD-ORDER INTERMODULATION DISTORTION OF A DUAL-GATE FET AMPLIFIER
THE STUDY OF THE THIRD-ORDER INTERMODULATION DISTORTION OF A DUAL-GATE FET AMPLIFIER PHILIP T. CHEN AND CHI C. HSIEH* ABSTRACT This paper studies the third-order intermodulation (IMD) products of dual-gate GaAs FET amplifier as a function of device bias and input power level. A l2GHz variable gain amplifier employing a dual-gate FET has been designed using a novel synchronized biasing technique t
20 GHz GaAs FET AMPLIFIER FOR H-SAT REPEATER
20 GHz GaAs FET AMPLIFIER FOR H-SAT REPEATER J. Arnold* ABSTRACT Thi s paper descri bes the results of a study undertaken for the European Space Agency to evaluate currently available GaAs MESFETs, and the development of an amplifier suitable for inclusion in a proposed 20/12 GHz H-SAT repeater. The study was undertaken during the period January 1979 to May 1980 prior to the WARC-77 Conference,
A BROADBAND MEDIUM POWER GaAs FET AMPLIFIER
A BROADBAND MEDIUM POWER GaAs FET AMPLIFIER Pierre BAUDET, Didier MEIGNANT ABSTRACT The broadband operation of 6-12 GHz single ended and balanced amplifiers using 600 ~m gate width medium power FET's is reported. An output power in excess of 400 mW with 10 dB associated gain was obtained from a cascade of 3 balanced amplifiers.
A 9 - 10 GHz 5 WATT GaAs FET AMPLIFIER
A 9 - 10 GHz 5 WATT GaAs FET AMPLIFIER Nobutoshi Fukuden, Naoyuki Ishiyama and Youichi Arai ABSTRACT A high power GaAs FET amplifier with an output power of 5 watts in the X-band has been developed. Gain is more than 40 dB and the intercept point is plus 46.8 dBm. Four power GaAs FETs with a gate width of 7,200 microns are used in the final stage amplifier. The combining loss of the final stag
RADIATION FROM GRATING ANTENNAS ON DIELECTRIC WAVEGUIDES OF FINITE WIDTH
RADIATION GUIDES S. T. OF FROM FINITE and A. A. GRATING WIDTH Oliner ANTENNAS ON DIELECTRIC WAVE- Peng ABSTRACT A practical and systematic approach is presented for calculating the radiation properties of dielectric grating antennas of finite width. Such grating antennas, which show great promise for the millimeter-wave range, are placed on dielectric waveguides, such as the rectangular die
POLARIZATION PROPERTIES OF THE HELIX ANTENNA
POLARIZATION PROPERTIES OF THE HELIX ANTENNA J. Bach Andersen ABSTRACT The mode structure and surface fields of a helix with a dielectric core have been found. Conditions for constructing an antenna with perfect circular polarization in all directions have been identified and by defining a circular polarization index (CPI) optimum antennas may be found. The CPI essentially measures the degree