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NORMALLY-OFF MESFET ANALOGUE CIRCUITS
NORMALLY-OFF MESFET ANALOGUE CIRCUITS V. PAUKER*, P. OAUTRICHE*, A. GIAKOUMIS**, Member IEEE, A. KAZEMINEJAO*** Abstract A very small (0.04m2) monolitilic ched, amplifier using enhancement realized, to demonstrate the naloog type of transistor. The gain of factor is 2dB. DC to 2GHz, input/output matmode GaAs MESFET's has been circuits capability of this the amplifier is 12dB, its noise
A MODIFIED MOMENT METHOD FOR THE COMPUTATION OF COMPLEX MMIC CIRCUITS
A MODIFIED MOMENT MMIC CmCUITS METHOD FOR THE COMPUTATION OF COMPLEX Y. L. Chow, X. Y. She, G. Howard. \ and M. G. Stubbs, M. GaudreaultU ABSTRACT The moment method for linear antennas and simple microstriplines has been modified to calculate the response of a complex GaAs MMIC. The modifications make the moment method matrix small, the computing program efficient and simple without sacri
DESIGN AND TECHNOLOGY FOR HIGH YIELD DECADE BANDWIDTH GaAs MONOLITHIC FEEDBACK AMPLIFIER (0,3 - 3GHz)
DESIGN AND TECHNOLOGY FOR HIGH YIELD DECADE BANDWIDTH GaAs MONOLITHIC FEEDBACK AMPLIFIER (0,3 - 3GHz) M. Renvoise*, N. Sebati*, C. Kermarrec** ABSTRACT A monolithic GaAs two stage feedback amplifier, with one decade bandwidth, 0,3 - 3 GHz, has been developped to demons- trate the validity of the MMIC's production technology. It yields 15dB small signal gain, less than 5dB
AN INTEGRATED DBS RECEIVER FRONT-END USING A MONOLITHIC FREQUENCY CONVERTER
AN INTEGRATED DBS RECEIVER FRONT-END A MONOLITHIC FREQUENCY CONVERTER USING B. D. Geller* and J. L. Abita** ABSTRACT A low-noise 12-GHz receiver front-end consisting of a novel integration of a monolithic frequency converter (two-stage LNA and mixer), MIC bandpass filter, and lumped element IF network on a coplanar waveguide (CPW) mother board is described. The techniques employed for the desi
NEW DESIGN TOOLS FOR HIGH FABRICATION YIELD lOW COST MONOLITHIC GaAs CIRCUITS USING PASSIVE AND ACTIVE COMPONENTS STATISTICAL MODELS
NEW DESIGN TOOLS FOR HIGH FABRICATION YIELD LOW COST MONOLITHIC GaAs CIRCUITS USING PASSIVE AND ACTIVE COMPONENTS STATISTICAL MODELS P. GAMAND, R. lEBLANC, M. lEVENT-VIllEGAS, P. RA6INZOHN Abstract This paper contains experimental data concerning passive and active components used in our standard MMICdesign. Statistical models are established. Simulated variations of the performances of distribut
A CYLINDRICAL SYSTEM FOR QUASI-REAL TIME MICROWAVE TOMOGRAPHY
A CYLINDRICAL SYSTEM FOR QUASI-REAL TIME MICROWAVE TOMOGRAPHY L.Jofre, E.de 10s Reyes, M.Ferrando, A.E1ias, J.Romeu, M.Baquero, J.M.Rius ABSTRACT A cylindrical system for biomedical microwave tomography is presented. The circular algorithms and some numerical reconstructions are discussed. Fi na11y the experimental set-up is described and some preliminary measurements are presented.
INTEGRATED SWITCHED V ANTENNA ARRAY FOR THE MEASUREMENT OF THE DIFFRACTED FIELD FOR MEDICAL MICROWAVE IMAGING.
INTEGRATED SWITCHED V ANTENNA ARRAY FOR THE MEASUREMENT THE DIFFRACTED FIELD FOR MEDICAL MICROWAVE IMAGING. M. Baribaud * , M. Bouthinon ABSTRACT * , M. Dib* , R. Salazar Cardozo * OF The medical application of microwave imaging needs a commutated aerial array for the recording of the diffracted field. The system described below integrates the 32 x 32 reception aerials, the commutation diodes an
FEASIBILITY OF RADIOMETRIC SENSING OF TWO-DIMENSIONAL THERMAL PATTERNS IN LOCAL HYPERTHERMIA
FEASIBILITY OF RADIOMETRIC THERMAL SENSING PATTERNS IN LOCAL HYPERTHERMIA OF TWO-DIMENSIONAL F. Bardati, M. Mongiardo, D. Solimini, P. Tognolatti ABSTRACT A hyperthermia. displacing heated results processed a region numerical The analysis uses has first been a carried thermal sensor gradient out to of test data the depth. a technique by local by the of for the reconstruction of two-dimen
EFFECTS OF MODULATED MICROWAVE AND RF FIELDS ON THE MEMBRANE OF NEURONAL CELLS
EFFECTS OF MODULATED MICROWAVE AND RF FIELDS ON THE MEMBRANE OF NEURONAL CELLS P. Bemardi*, G. D'Inzeo*, S. Pisa* ABSTRACT In previous works we have developed a theoretical model simulating a nonthermal interaction mechanism suitable to justify possible electromagnetic wave effects at cellular membrane level. The model has been used to analyze the effects of the injection of an ELF sinusoidal curr
PULSED AND CW N-TYPE SILICON SINGLE-DRIFT IMPATT DIODES FOR 140 GHz
PULSED AND 140 GHz CW N-TYPE SILICON SINGLE-DRIFT IMPATT DIODES FOR J. Wenger, J. Freyer, W. Harth * Abstract: The drift-zone length and optimum doping density of 140 GHz Impatt diodes is evaluated from measurements of the breakdown voltage versus doping concentration. Pulsed and cw n-type single drift diodes were fabricated and the rf-performance was investigated. Relatively high output power