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ON THE OPTICAL TRANSMISSION OF MILLIMETER WAVES
ON THE OPTICAL TRANSMISSION S. TEDJINI,D. OF MILLIMETER WAVES RAULY,E. PIC* ABSTRACT Optical Components, which have been developed over the past 15 years mainly for telecommunication systems, also have the potential for widespread applications in the microwave domain. One of the interesting topics is the transmlssion of microwave via optical waveguldes. Since the fibers are low loss. broad ba
ENHANCED TED MMW DEVICE PERFORMANCE USING GRADED DOPING PROFILES
ENHANCED TED MMW DEVICE PERFORMANCE and RAYMOND L. ROSS** USING GRADED DOPING PROFILES JOHN ONDRIA* ABSTRACT Epitaxially grown GaAs transferred electron device n++ n n+ structures, having intentionally graded n-active layer doping concentrations, exhibit significant improvements in output powers and efficiencies relative to flat nactive layer devices. A further improvement of greater than 30 p
A MODEL FOR COMPUTER-AIDED DESIGN OF BROAD-BAND STRIPLINE CIRCULATORS
A MODEL FOR CIRCULATORS COMPUTER-AIDED DESIGN OF BROAD-BAND STRIPLINE G. Macchiarella* E. Cavalieri d'Oro** ABSTRACT A model has been developed for circuit characterization of stripline circulators, which is based on the eigenvalues of the impedance matrix of a three port, cyclic symmetric, non-reciprocal disk resonator. This model can be easily included in computer-aided procedures for the
CAE-TOOLS FOR DESIGN OF DR-STABILIZED STRIPLINE OSCILLATORS
CAE-TOOLS FOR DESIGN OF DR-STABILIZED w STRIPLINE OSCILLATORS Georg Schone, Sebastian Riegger ~) ABSTRACT: A new technique for faster and more efficient design and manufacturing of stripline oscillators in the frequency range above lOGHz has been introduced. Due to the new model of the transistor as a true 3-port, the testing period of a designed circuit is reduced tremendous. By the help
TLM ANALYSIS OF FINLINE T-JUNCTIONS FOR COMPUTER-AIDED DESIGN
TLM ANALYSIS OF FINLINE T-JUNCTIONS FOR COMPUTER-AIDED DESIGN pierre Saguet*, Smail Tedjini*, and Wolfgang J.R. Hoefer** ABSTRACT This paper presents a circuit model of a T-junction in bilateral finline. The elements of this model, which is suitable for CAD, have been determined with the Modified Transmission Line Matrix (MTLM) method of numerical analysis. This procedure amounts to simulating
FIELD-THEORETICAL ANALYSIS OF MIC PACKAGING STRUCTURES WITH A THREE- DIMENSIONAL FINITE-DIFFERENCE METHOD AND MODELLING BY EQUIVALENT CIRCUITS FOR CAD APPLICATION
FIELD-THEORETICAL DIMENSIONAL FOR CAD APPLICATION ANALYSIS OF MIC PACKAGING STRUCTURES WITH A THREEMETHOD AND MODELLING BY EQUIVALENT CIRCUITS FINITE-DIFFERENCE A. Christ, ABSTRACT H.L. Hartnagel* Structures for interconnecting active microwave semiconductor-devices, e.g. FET's and MIC's, with the electrical surrounding or with each other have to be designed more and more carefully when inc
STABILITY IN MICROWAVE ACTIVE CIRCUITS
STABILITY IN MICROWAVE ACTIVE CIRCUITS D.J.H. Maclean ABSTRACT * The concepts, philosophy and applications of feedback to microwave amplifiers and oscillators are discussed. A new quantity is introduced, which is a measure of feedback present within the transistor itself. The effects on transmission and reflection properties leading to improved design methods are outlined. The use as an aid i
A GENERAL-PURPOSE PROGRAM FOR THE ANALYSIS OF NONLINEAR MICROWAVE CIRCUITS UNDER MULTITONE EXCITATION BY MULTIDIMENSIONAL FOURIER TRANSFORM
A GENERAL-PURPOSE PROGRAM FOR THE ANALYSIS OF NONLINEAR MICROWAVE CIRCUITS UNDER MULTITONE EXCITATION BY MULTIDIMENSIONAL FOURIER TRANSFORM Vittorio RIZZOLI (1), Claudio CECCHETTI (2) and AIE;!ssandro LlPPARINI (1) ABSTRACT The paper introduces a user-oriented program providing a general-purpose solution to multitone excitation problems of nonlinear microwave circuits. The use of the harmoni
AUTOMATIC FULL NOISE CHARACTERIZATION OF MICROWAVE GaAs FETs
AUTOMATIC FULL NOISE CHARACTERIZATION OF MICROWAVE GaAs FETs Laurent CHUSSEAU (**), Marc PARISOT (*), Nelly JOUSSEAUME (*) ABSTRACT A new electronically controlled input tuner is proposed for microwave device noise parameter characterization. The design and performance of this tuner are discussed. A large set of reflection coefficient equally spaced in Smith chart is produced using only freque
ANALYSIS OF THE RELATIONSHIP BETWEEN NOISE PERFORMANCE AND TUNING ELEMENTS IN MESFET VCOS
ANALYSIS OF THE RELATIONSIDP BETWEEN NOISE PERFORMANCE AND TUNING ELEMENTS IN MESFET VCOS. M. Perkins, R.D. Pollard and M. J. Rowest ABSTRACT A theoretical analysis is described which is capable of predicting the influence of varactor diodes on the noise performance of MESFET voltage-controlled oscillators (VCOs). The technique is based on modelling non-linearities in the active devices using t