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YIELD OPTIMIZATION OF LARGE SCALE MICROWAVE CIRCUITS
YIELD OPTIMIZATION .+ OF LARGE SCALE MICROWAVE CIRCUITS J.W. Bandler ,R.M. BIernackI, . ..+ S.H. Chen, . M.L. Renault, . J. Song + and Q.J. Zhang ... ABSTRACT In this paper we demonstrate for the first time the feasibility of yield optimization of large scale microwave circuits. A combined strategy to attack this difficult problem is proposed, which includes the use of supercomput
lCAD, an Expert-System for Network-Analyzing and Synthesizing
lCAD. an Expert-System for Network-AnalyzinQ SynthesizinQ and P. L. Pogatzki, T. Durbaum, H. J. Schmitt * Abstract E. Froch, A. Akhnoukh, ICAD, a new Network-Analyz ing- and Network-Synthesizing-Program is presented. It is built as an Expert-System for Microwave-Applications. The time to design a microwave-circuit using ICAD is drastically reduced. The performance of ICAD has been tested in d
NON LINEARITIES OF THE Ga As SUBMICROMETER F.E.T.: NEW M0DE OF CHARACTERIZATION AND MODELIZATION
NONLIt-lEARITIES OF THE G3. As SUBt.1ICROt1ETER F .E.T.: NEt~ t10DE OF CHARACTERI ZATION AND t.10DELI ZATI OH ------E.ALLAt1ANDO and \( .BONNAIRE Centre Hyperfrequences et Semiconducteurs-U.A.CNRS Universite de Lille I-Flandres-Artois 59655Villeneuve d'Ascq-France 287 ABSTRACT We propose a new mode of characterization and modelization of Ga As Submicrometer Single and Dual-Gate F.E.T. in nonline
MODELING THE GATE CAPACITANCE NONLINEARITY IN GaAs MESFET'S
MODELING T.J. THE GATE CAPACITANCE NONLINEARITY IN GaAs MESFET'S Brazil, P.O'Connell and N. O'Flaherty. * ABSTRACT Accurate large-signal circuit a correct description of the the gate Schottky capacitance. gation of the physical basis data models for GaAs MESFET's require nonlinear voltage dependence of This work describes an investiof measured capacitance-voltage using a l-dimensiona
MICROWAVE OSCILLATOR DESIGN BY STATE-OF-THE-ART NONLINEAR CAD TECHNIQUES
MICROWAVE OSCILLATOR DESIGN BY STATE-OF-THE-ART NONLINEAR CAD TECHNIQUES Vittorio RIZZOLI (1), Andrea NERI (2) and Alessandra COSTANZO (1) ABSTRACT The paper introduces a systematic approach to the design of microwave oscillators, whereby the capabilities of state-of-the-art nonlinear CAD techniques are fully exploited. A true numerical optimization yields the active device bias point and the emb
TIME DOMAIN PERFORMANCE ON ADVANCED PACKAGING FOR HIGH SPEED ICs ON GaAs
TIME DOMAIN PERFORMANCE FOR HIGH SPEED ON ADVANCED ICs ON GaAs PACKAGING T. Razban, J. Chilo, ABSTRACT Delay time and crosstalk phenomena in packages for GaAs ICs are discussed in this paper. Interconnection lines between the "chip" and the exterior world are non-uniformly coupled lines; for analyzing such a system, we define the characteristics of a tube being a group of uniformly coupled li
AN IMPEDANCE TRANSFORMING TRANSISTOR MOUNTING STRUCTURE FOR AMPLIFIERS IN FIN-LINE TECHNIQUE
AN IMPEDANCE STRUCTURE TRANSFORMING FOR AMPLIFIERS TRANSISTOR IN FIN-LINE MOUNTING TECHNIQUE U. Meier, J.H. Hinken, H. Fischer1 ABSTRACT A novel impedance transforming transition between a fin-line and an unbalanced line was used to develop a new mounting structure to characterize FETs in fin-line technique. In the frequency range of 9.. .12 GHz measured S-parameters are compared with dat
A QUASI-OPTICAL 8 PORT JUNCTION COMPARATOR CIRCUIT BASED ON A SINGLE WIRE GRID
A QUASI-OPTICAL 8 PORT JUNCTION COMPARATOR CIRCUIT BASED ON A SINGLE WIRE GRID G. P. Riblet* ABSTRACT In this paper an 8 port quasi-optical junction comparator circuit is described. It makes use of a single wire grid and both directions of polarization. In each case the electric field vector E is oriented at 45° to the grid wires. A planar junction comparator circuit which makes use of microstrip
THEORETICAL AND EXPERIMENTAL INVESTIGATION OF OPEN MICROSTRIP GAP DISCONTINUITIES
THEORETICAL AND EXPERIMENTAL INVESTIGATION OF OPEN MICROSTRIP GAP DISCONTINUITIES M. DRISSI*, V. FOUAD HANNA*, J. CITERNE** ABSTRACT A theoretical analysis of open discontinuities in microwave planar circuits using integral equations technique solved by the moment method is described. Characterization of the dicontinuity by an equival ent scattering matrix is then accurately evaluated from the d
SATURATION AND NOISE OF MICROWAVE QUANTUM SIS DETECTOR
SATURATION AND NOISE OF MICROWAVE QUANTUM SIS DETECTOR V.Yu Belitsky,I.L.Serpuchenko,M.A.Tarasov,A.N.Vystavkin ABSTRACT The saturation and dynamic range of quantum SIS direct detector and mixer are discussed.The experimental results of SIS M-band detector saturation and noise are described. The dynamic range of quasiparticle SIS detector at 75 GHz was 46 db