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MONOLITHIC 60 GHz AMPLIFIER USING LOW NOISE PSEUDOMORPHIC HEMTs
Monolithic 60 GHz Amplifier using Low Noise Pseudomorphlc HEMTs B. Adelseck+, J. Schroth + , J. Wenger*, P. Narozny* Abstract The design and fabrication of a monolithic 60 GHz low noise amplifier is presented. As active device very low noise pseudomorphic HEMTs with Fmax ~ 200 GHz have been developed and fabricated using a full monolithic technology. a two stage amplifier has been fabricated ha
WIDEBAND BALANCED FREQUENCY DOUBLERS - A PROPOSED NOVEL PLANAR MIC STRUCTURE
WIDEBAND BALANCED FREQUENCY DOUBLERS - A PROPOSED NOVEL PLANAR MIC STRUCTURE Rainer Bitzer * ABSTRACT Wideband microwave frequency doublers employing beam-lead Schottky barrier diodes in a new planar balun configuration are presented. Measurement results for output frequencies up to the K-band show good agreement with simulated results. A conversion loss less than 8.5 dB and an output frequen
STEADY -STATE ANALYSIS OF FORCED MICROWAVE OSCILLATORS
STEADY -STATE ANALYSIS OF FORCED MICROWAVE OSCILLATORS Vittorio RIZZOLI (1), Andrea NERI (2), Alessandra COSTANZO (1) ABSTRACT The paper introduces a hannonic-balance approach to the steady-state analysis of nonlinear microwave oscillators forced by a number of sinusoidal signals. This important class of subsystems includes modulators of any kind, self-oscillating mixers, as well as integrate
SYNTHESIS OF A CLASS OF WAVEGUIDE PHASE SHIFTERS
SYNTHESIS OF A CLASS OF WAVEGUIDE PHASE SHIFTERS F. Alessandri1 , M. Mongiard02, R. Sorrentino 3 ABSTRACT A synthesis method is presented for fixed phase shifters consisting of cascaded E-plane stubs in rectangular waveguide technology. Notable improvements with respect to conventional realizations are obtained by the use of a reduced width waveguide loaded with double stubs. The synthesis method
ACCURATE CHARACTERIZATION OF MICROSTRIP FILTER AND HYBRID-RING COUPLER VIA AN IMPROVED TLM METHOD USING VARIABLE AND CURVED MESHES
ACCURATE CHARACTERIZATION OF MICROSTRIP FILTER AND HYBRID-RING COUPLER VARIABLE AND CURVED VIA AN IMPROVED MESHES TLM METHOD USING B. Isele, H. Bender, R. Weigel, J. Hausner, P. Russer ABSTRACT A microstrip circuit design tool based on the two-dimensional transmission-line matrix (2D- TLM) method is described. The TLM algorithm described in this paper incorporates variable and curved dis
GENERALIZED S-MATRIX CAD OF APERTURE COUPLED BANDPASS, BANDSTOP, AND ELLIPTIC FUNCTION WAVEGUIDE FILTERS
GENERALIZED S-MATRIX CAD OF APERTURE COUPLED BANDPASS, BANDSTOP, AND ELLIPTIC FUNCTION WAVEGUIDE FILTERS F.Arndt, ABSTRACT The rigorous field theoretical design of rectangular and circular aperture coupled waveguide cavity filters is described. The design is based on the full-wave mode matching method .applied for a few simple basic building block elements in combination with the generalized S-Mat
FAST FINITE DIFFERENCE TIME DOMAIN METHOD FOR THE ANALYSIS OF PLANAR MICROSTRIP CIRCUITS
FAST FINITE DIFFERENCE TIME DOMAIN METHOD FOR THE ANALYSIS OF PLANAR MICROSTRIP CIRCUITS D.L. Paul, ABSTRACT E.M. Daniel, C.J. Railton. Although the FD-TD method has been successfully applied to the analysis of planar microstrip circuits eg (1), it is necessary to make improvements so that the time of analysis can be reduced. One such improvement consists in using an irregular grid (2). The a
OPERATION OF GaAs P+PNN+ AVALANCHE-DIODES AT HIGH CURRENT DENSITIES FOR PULSED MILLIMETRE WAVE OSCIllATORS
OPERATION DENSITIES OF GaAs P+PNN+ AVALANCHE-DIODES AT FOR PULSED MILLIMETRE WAVE OSCILLATORS HIGH CURRENT L. Gaul, M. Claassen and S. Huber . ABSTRACT The large-signal sities, vestigated for large device. ration which operation is different avalanche processes effects discussed. and are rf-resistance nearly of this The compared of of GaAs from wave which p+pnn+ avalanche-diodes Impatt-mode
TIME-DOMAIN MODELING OF THE TRANSIENT RESPONSE OF A BACK-TO-BACK SILICON PIN-DIODE PASSIVE POWER-LIMITER CIRCUIT.
TIME-DOMAIN MODELING OF THE TRANSIENT PONSE OF A BACK-TO-BACK SILICON PIN-DIODE SIVE POWER-LIMITER CIRCUIT. C. DALLE, P. A. ROLLAND, ABSTRACT RESPAS- M. R. FRISCOURT. We have developed a numerical procedure which allows us to solve the integro-differential equation driving the electrical behavior of a lumped-element circuit while accounting for the semiconductor component by means of a numerica
SINGLE FET X-BAND PULSED POWER DRO
SINGLE FET X-BAND PULSED POWER DRO A P M Maas, R Grooters* ABSTRACT The design of an 8.65 GHz solid state pulsed power Dielectric Resonator Oscillator (DRO), intended for use in harmonic radar or beacon application, is presented. The oscillator is realized in MIC thin-film technology, using a 10 Watts matched power FET and a high-Q dielectric resonator. The simulated behaviour of the active and