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Linear and non-linear modelling verification of power HBTs

Author: H. Do-Ky, T. Laneve, S. Sychaleun, M. Stubbs, J.S. Wight

Linear and non-linear modelling verification of power HBTs Hien Do-Ky"', Tony Laneve""",Somsack Sychaleun""", Malcolm Stubbs"',J. S. Wight"'''' .Communications ResearchCentre, 3701Carling Ave., Ottawa, Ontario, K2H 8S2, Canada. Ottawa, Ontario, K1S 5B6,Canada. "Carleton University, 1125Colonel ByDr., Abstract: A large-signal model for power heterojunction bipolar transistors (HBTs) is described

A Novel MMIC Balanced FET Mixer with Superior Performance

Author: A.H Baree, I.D. Robertson

A Novel MMIC Balanced FET Mixer with Superior Performance A.H Baree &:I.D. Robertson CommUl1ications Research Group DepL of Electronic &:Electrical Engineering ,.\ King's College London University of,London Sttand. LOndon WC2R 2LS. U.K. . TEL: +44 71 873 2523 FAX: +44 71 8364781' ABSTRACT . , The design and performance of a new type of monolithic balanced FET mixer is described in this .

On Optimum Feedback for Simultaneous Input Power and Noise Matched Amplifier

Author: J. Xu

for Simultaneous On Optimum Feedback Input Power and Noise Matched Amplifier Jianguo Xu Department of Microwave Technology Chalmers University of Technology 41296 Goteborg, SWEDEN ABSTRACT A X-factor is defined as a figure of merit of a two-port for the purpose of simultaneous matching and is used to find the Optimum Feedback Conditions. For the transistors ATF35076 and FHR02FH over 2 to 8 GHz,

A Tunable Lossless HBT Broad-Band Monolithic Microwave Floating Active Inductor

Author: C. Zanchi,T. Parra, J. Graffeuil

A Tunable Lossless HBT Broad-Band Monolithic Microwave Floating Active Inductor c. Zanchi,T. Parra, J. Graffeuil -. j' LAAS-CNRS and Universite Paul Sabatier, 7 avodu Colonel Roche, 31077 Toulouse, France. . Tel: (33) 61 33 63 71 ; ~~ : (33} 6133 62 O~ Abstract: A monolithic floating Tunable Active Inductor (TAI) based on an Heterojunction Bipolar Transistor design is proposed. This circuit is co

PASSIVE MICROWAVE LIMITER WITH A NEW SEMICONDUCTOR DIODE AND A NOVEL ELECTRODYNAMIC SYSTEM

Author: L.V. Lebedev, A.S. Shnitnikov, N.V. Drozdovski, L.M. Drozdovskaia

PASSIVE HICf:OWAVE ELECTRODYNAMIC LIMITER SYSTEM W1'l'H A NE\tJ ~;EHICUNDU(~~TOn DIODE AND A NOVEL I.V. Lebeljev. A.S. ::,rulitnikc:vJ., N.V. Dl'ozdovski, L.M. DrozdDvskaia2 1Moscow Power Engineer ir Ig Inst i tu,Le (MP;EI) " KrasnokOi:<.armennaya, 1'i, Moscow. 1l12~1(ZI, Russia, phune: +7-095-:362-7~84. fax: +7-095.-362-8818 2Special,Research Bureau liPEI, KrasnoKazaI'm

FAST ELECTRIC PULSE EXCITATION OF AN OSCILLATOR WITH SEVERAL TUNNELING DEVICES IN SERIES

Author: O. Boric-Lubecke, D.-S. Pan, T. Itoh

FAST ELECTRIC PULSE EXCITATION OF AN OSCILLATOR WITH SEVERAL TUNNELING DEVICES IN SERIES Olga Boric-Lubecke, Dee-Son Pan and Tatsuo Itoh University of California, Los Angeles. 405 Hilgard Avenue, Los Angeles, CA 90024, U.S.A. ABSTRACT An oscillator with several tunneling devices in series has a demanding excitation condition due to the difference in the I-V characteristics of the individual device

MODELLING OF PIN PHOTODETECTORS FOR MICROWAVE AND HIGH POWER APPLICATIONS

Author: J. Harari, F. Journet, O. Rabii, J. Van de Casteele, L. Joannes, J.P. Vilcot, D. Decoster, C. Dalle, M.R. Friscourt

Microwave Noise of hot electrons in AlxGa1-xAs channel. Procedure for measuring AlGaAs lattice heating

Author: M. de Murcia, E. Richard, A. Benvenuti, J. Vanbremeersch, J. Zimmermann

t:, " Mkrowa~e Doiseofhot electroDsin AlxGal-xAs chan.,eL Procedure for measuring AIGaAs lattice heating + M.de MU~C" , . -" E.RI CHARD, -- A .BENVENVTI '.' J.VANBREMEERSCH------ , . . J.ZIMM~RMANNuu, " ABSTRACT: Hot electron noise temperatures using a pulsed measurement technique as function of electric field in the frequency range 50MHz-4GHz are presented in Si doped AIxGa l-xAs alloy w

Reduction of the Feedback Capacitance of HFETs by Changing Transistor Layout and Using Via Holes for Source Changing Transistor Layout and Using Via Holes for Source Grounding

Author: N. Rorsman, M. Garcia, C. Karlsson, H. Zirath

Reduction of the Feedback Capacitance of HFETs by Changing Transistor Layout and Using Via Holes for Source Grounding Niklas Rorsman, Mikael Garcia, Christer Karlsson, . and Herbert:, Zirath .. ~. ~ .' Department of Microwave Technology Chalmers University of Technology Goteborg, Sweden It" ; ~ ABSTRA.cr . " The influence of HFET layout and via holes on the feedbaek capacitance of passive

Stacked Heterostructure Barrier Varactors on InP for Millimeter Wave Triplers

Author: K. Krishnamurthi, R.G. Harrison, C. Rogers, J. Ovey, S.M. Nilsen, M. Missous

Stacked Heterostructure Barrier Varactors on InP for Millimeter Wave Triplers Kathiravan Krishnamurthi, Robert G. Harrison Dept. of Electronics, Carleton University, Ottawa, K1S 5B6, Canada. , Chris Rogers, John Ovey Philips Microwave, Hazel Grov~, Stockport, SK7 5BJ, UK. Svein M. Nilsen , SensoNor, PO Box 196, N-3192, Horten, Norway. Mohammed Missous Solid-State Electronics Group, EE Dept,