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EuMIC: SiGe BiCMOS as Enabling Technology for Next Generation RF & THz Systems
Proceedings of the 16th European Microwave Integrated Circuits Conference SiGe BiCMOS as Enabling Technology for Next Generation RF & THz Systems Gerhard Kahmen IHP GmbH, Germany Abstract—While CMOS performance is still constantly progressing SiGe based BiCMOS technologies take a key role when pushing next generation RF systems into the Sub-THz and THz domain. The strength of SiGe BiCMOS technolo
EuMIC: Numerical and Experimental Investigations of Self-Mixing Effect of a Planar Gunn Diode Oscillator
Proceedings of the 16th European Microwave Integrated Circuits Conference Numerical and Experimental Investigations of Selfmixing Effect of a Planar Gunn Diode Oscillator Ming Yan Zhong1, David R. S. Cumming2, and Chong Li3 1 James Watt School of Engineering, University of Glasgow, UK m.zhong.1@research.gla.ac.uk, {2davd.cumming.2, 3chong.li}@glasgow.ac.uk In this paper, we’ll investigate the se
EuMIC: Towards an Excitable Microwave Spike Generator for Future Neuromorphic Computing
Proceedings of the 16th European Microwave Integrated Circuits Conference Towards an Excitable Microwave Spike Generator for Future Neuromorphic Computing Qusay Al-Taai1, Razvan Morariu1, Jue Wang1, Abdullah Al-Khalidi1, Ali Al-Moathin1, Bruno Romeira2, José Figueiredo3, Edward Wasige1 1 High Frequency Electronics Group, James Watt School of Engineering, University of Glasgow, UK 2 International
EuMIC: On-Chip Power Combining with 3-Stage 75--110GHz GaN MMIC Power Amplifiers
Proceedings of the 16th European Microwave Integrated Circuits Conference On-chip Power Combining with 3-Stage 75–110 GHz GaN MMIC Power Amplifiers Shane Verploegh, Timothy Sonnenberg, Mauricio Pinto, Akim Babenko, Zoya Popovic´ University of Colorado Boulder, USA {shane.verploegh, timothy.sonnenberg, zoya.popovic}@colorado.edu Abstract — This paper presents reactive and balanced on-chip power c
EuMIC: An E-Band Bidirectional PALNA in 0.13(mu)m SiGe BiCMOS Technology
Proceedings of the 16th European Microwave Integrated Circuits Conference An E-band Bidirectional PALNA in 0.13 µm SiGe BiCMOS Technology R. Ahamed#, M. Varonen*, D. Parveg*, M. Najmussadat#, M. Kantanen*, Y. Tawfik#, K.A.I. Halonen# # Department of Electronics and Nanoengineering, Aalto University, Finland * VTT Technical Research Centre of Finland Ltd, Finland raju.ahamed@aalto.fi, mikko.varon
EuMIC: A 7--30GHz, 80-dB(Omega) Noise-Optimized, Bandpass-Like TIA in 130nm SiGe BiCMOS Technology for Quasi-Coherent Optical Receivers
Proceedings of the 16th European Microwave Integrated Circuits Conference A 7-30 GHz, 80-dBΩ Noise-Optimized, Bandpass-Like TIA in 130 nm SiGe BiCMOS Technology for Quasi-Coherent Optical Receivers Tom K. Johansen#, Guillermo Silva Valdecasa#*, Monika Kupska*, Jose A. Altabas*, Omar Gallardo*, Michele Squartecchia*, Jesper B. Jensen* # Department of Electrical Engineering, Technical University o
EuMIC: Design of Terahertz InP pHEMT Using Machine Learning Assisted Global Optimization Techniques
Proceedings of the 16th European Microwave Integrated Circuits Conference Design of Terahertz InP pHEMT Using Machine Learning Assisted Global Optimization Techniques Jing Wang, Li-Yuan Xue, Bo Liu, Chong Li James Watt School of Engineering, University of Glasgow, UK {j.wang.6, l.xue.1}@research.gla.ac.uk, {bo.liu, chong.li}@glasgow.ac.uk simulation models have become available. However, the draw
EuMIC: Transient Field-Plate Thermometry Demonstrated on a 20-W X-Band GaN Power Amplifier
Proceedings of the 16th European Microwave Integrated Circuits Conference Transient Field-Plate Thermometry Demonstrated on a 20-W X-Band GaN Power Amplifier Simon J. Mahon, Melissa C. Gorman, Michael C. Heimlich Macquarie University, NSW 2109, Australia simon.mahon@mq.edu.au resistance change is compared to a prior calibration to determine the transistor’s rise in temperature. GRT offers the ad
EuMIC: A TCAD Simulation Study on Gated-Anode Diodes for Microwave Applications
Proceedings of the 16th European Microwave Integrated Circuits Conference A TCAD simulation study on gated-anode diodes for microwave applications Arijit Bose# , Debaleen Biswas# , Qiang Ma# , Yoichi Tsuchiya# , Hidemasa Takahashi* , Yuji Ando* , Akio Wakejima# # Electrical and Mechanical Engineering, Nagoya Institute of Technology, Japan * Department of Electronics, Nagoya University, Japan ari
EuMIC: Analysis of RF Stress Influence on Large-Signal Performance of 22nm FDSOI CMOS Transistors Utilizing Waveform Measurement
Proceedings of the 16th European Microwave Integrated Circuits Conference Analysis of RF Stress Influence on Large-Signal Performance of 22nm FDSOI CMOS Transistors utilizing Waveform Measurement Dang Khoa Huynh†* , Quang Huy Le†* , Steffen Lehmann# , Zhixing Zhao# , Germain Bossu# , Wafa Arfaoui# , Defu Wang† , Thomas K¨ampfe† , Matthias Rudolph* † Center * Ulrich-L.-Rohde Nanoelectronic Techn