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A very broad-band analog phase shifter covering four frequency octaves
A very broad-band analog phase shifter covering four frequency octaves N Fel, C Guimard, M Wittmer et E Dupont-Nivet. CEA, Etablissement de Bruyeres-Ie-Chatel, BP12, 91680 Bruyeres-Ie-Chatel. Abstract A monolithic very broad-band phase shifter has been designed and fabricated with a 0.2 micron HEMT technology. The architecture of this phase shifter is based on vector modulation. Measurements demon
A LO-rejecting balanced upconverter for communication systems
A LO-rejecting balanced upconverter for communication systems Herbert Zirath* **, IlchoAngelov*, Christer Karlsson*, Niklas Rorsman** *Department of Microwave Technology, Chalmers University of Technology, S-412 96 Goteborg, Sweden * *Ericsson Microwave Systems AB, S-43 1 84 Molndal, Sweden Abstract An LO-rejecting millimeterwave balanced resistive HFET-upconverter based on a dual FET configuratio
A pseudomorphic HEMT monolithic K-Band VCO
A pseudomorphic HEMT monolithic KBand VCO Mourad Ahdjoudi* AU Boudiaf** Pierre Pouvil* *Ensea-Emo, 6 Av du Ponce au, 95014 Cergy Tel (33-1) 30 736610 Fax (33-1) 30736627 **Universite de Marne-la-Vallee, 2 rue de Ia Butte verte, 93166 Noisy-Ie-Grand, France Abstract An appropriate nonlinear design methodology based on the optimisation of the load cycles, using the facilities of a commercial harmoni
Comparison of flip chip and wire bond interconnections and the technology evaluation on 51 GHz transceiver modules
Comparison of flip chip and wire bond interconnections and the technology evaluation on 51 GHz transceiver modules G Baumann*, D Ferling**, H Richter** *ALCATEL Telecom, Mannheimerstr. 22b, D75179 Pforzheim, Germany **ALCATEL Telecom, Lorenzstr. 10, D-70435 Stutgart, Germany Abstract On test vehicles realized in flip chip and wire bond versions, RF-measurements up to 70 GHz had been performed. The
Generalised model for prediction and synthesis of negative capacitance at microwave frequencies using common-gate MESFET
Generalised model for prediction and synthesis of negative capacitance at microwave frequencies using commongate MESFET Jason D Drew, Izzat Z Darwazeh and Brett Wilson. Dept of Electrical Eng & Electronics, University of Manchester Institute of Science & Technology (UMIST), PO Box 88, Manchester, M60 lQD, UK. (E-mail: dj@fs2.ee.umistac.uk; I.Darwazeh & B.Wilson@umistac.uk) Abstract Newly-derived e
Low phase-noise tunable oscillators using magnetostatic wave resonators
Low phase-noise tunable oscillators using magneto static wave resonators G Verstraeten* J Marien* F Coromina** 33,B2660 Hoboken,Belgium Tel.:32 3 8295774 Fax:32 3 829 5502 **European Space Agency, Estec, Postbus 299,2200 AG,Noorderwijk Zh,The Netherlands Tel.:3171656565 Fax.:3171656040 Abstract Two low phase-noise tunable oscillators were realised using magnetostatic wave (MSW) resonators. Operati
A 40db gain single chip pulse amplifier for particle detection
A 40db gain single chip pulse amplifier for particle detection F Giannini, S Ciorciolini, G Orengo Dipartimento di Ingegneria Elettronica Universita di Roma "Tor Vergata" Via della Ricerca Scientifica 00133, Roma, Italy. Abstract A very high gain front end amplifier for detection of cosmic rays in nuclear physics has been realised with the 0.5 µm GaAs MESFET technology of the Alenia foundry. Beca
A low noise and low cost YIG-oscillator in the frequency range from 4.5 GHz to 12 GHz
A low noise and low cost YIG-oscillator in the frequency range from 4.5 GHz to 12 GHz Thomas Musch Ruhr Universitat Bochum, Institut fur Hochfrequenztechnik, Universitatsstrabe 150, D-44780 Bochum, Germany Abstract A low noise and low cost YIG-oscillator has been developed. In order to achieve a good phase noise performance it has been simulated employing only the linear scattering parameters of t
GaAs MMIC power amplifiers for GMSK based GSM/DCS-1800 applications
GaAs MMIC power amplifiers for GMSK based GSM/DCS-1800 applications J Imbornone, M Murphy, J P Carney, P Nagle, S Mitchell, R S. Donahue, K Pierzynski, A Imhoff, R Giacchino, C Jones, U Eramo M/A-Com Microelectronics Division, IC Product Development, 100 Chelmsford St., Lowell, Massachusetts 01853-3294 Abstract The design and development of subscriber power amplifiers for GMSK based GSM (Global Sy
Application of microwave discharges for treatment of polymer surfaces
Application of microwave discharges for treatment of polymer surfaces I V Jovanovic *, D R Popovic*, S S Manola*'**, B Tomcik** and Z lJ Petrovic*'** *MTT INFIZ, Belgrade, Pregrevica 118, 11080 Zemun, Yugoslavia "Institute of Physics, University of Belgrade, POB 57,11001 Belgrade, Yugoslavia Abstract In this paper we analyze application of a simple microwave cavity discharge on the surface modific