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Generation and transmission o millimeter wave signals using a mode-locked microchip laser.
Generation and transmission of millimeter wave signals using a modelocked microchip laser. P. R. Herczfeld, A. J. C. Vieira, A. Rosen and W. D. Jemison§ Center for Microwave-Lightwave Engineering Drexel University 32nd & Chestnut Street Philadelphia, PA 19104 USA Phone: (215) 895-2914 Fax: (215) 895-4968 e-mail: herczfeld@cbis.ece.drexel.edu § Dept. of ECE, Lafayette College, Easton, PA 18042 USA
High Performance Optical Receiver Using a PIN Photodiode and Amplifier for Operation in the Millimeter-wave Region
High Performance Optical Receiver Using a PIN Photodiode and Amplifier for Operation in the Millimeter-wave Region L.Gomez-Rojas, N.J.Gomes, X.Wang, P.A.Davies and D.Wake* Photonics Group, Electronic Engineering Laboratory, University of Kent, Canterbury, CT2 7LS, UK., Tel +44 1227 827993, Fax +44 1227 456084, email: leg@ukc.ac.uk *BT Adastral Park-Martlesham Heath, Ipswich, UK, IP5 3RE Abstract
A 82-GHz-Optical-Gain-Cutoff-Frequency InP/InGaAs Double- Hetero-structure a 40-GHz-Band OEMMIC Photoreceiver
A 82-GHz-Optical-Gain-Cutoff-Frequency InP/InGaAs Double-Heterostructure Phototransistor (DHPT) and Its Application to a 40-GHz-Band OEMMIC Photoreceiver * ** Hideki Kamitsuna, Yutaka Matsuoka, Shoji Yamahata, and Naoteru Shigekawa NTT Photonics Laboratories 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198 JAPAN kamituna@aecl.ntt.co.jp Abstract - This paper presents an ultra-high-speed InP/
Microwave Optical Interaction Devices: From Concept to Applications
Microwave Optical Interaction Devices: From Concept to Applications D. Jäger, R. Heinzelmann, and A. Stöhr Gerhard-Mercator-Universität Duisburg, ZHO - Optoelektronik, Lotharstrasse 55, 47057 Duisburg, Germany Phone: +49 203 379 - 2340, Fax: +49 203 379 - 2409, E.mail: D.Jaeger@uni-duisburg.de Abstract - In this paper, we review our recent work on novel high-speed photonic InP components and their
An Effective Approach to Estimate Noise Parameters Sensitivities of Microwave Amplifiers with respect to Transistor Bias
An Effective Approach to Estimate Noise Parameters Sensitivities of Microwave Amplifiers with respect to Transistor Bias A. El-Mehdi, G. Vasilescu, IEEE Member, G. Alquié, V. Fouad-Hanna, Fellow IEEE Université P. & M. Curie, LIS., BC 252, 4 place Jussieu, 75252 Paris, France E-mail: abdelmalek.Elmehdi@lis.jussieu.fr Abstract- In this contribution the noise performance sensitivities of microwaves
Combination of Circuit and Full Wave Analysis for Pre-Matched Multifinger FET
Combination of Circuit and Full Wave Analysis for Pre-Matched Multifinger FET B. Cetiner*, R. Coccioli**, B. Housmand*, T. Itoh* * University of California, Los Angeles, USA, **Conexant System Inc., Irvine, USA bedri@uci.edu, roberto.coccioli@conexant.com, titoh@ucla.edu Abstract-- A scalable, lumped element equivalent circuit, of a pre-matched multifinger FET cell is proposed. The model is der
Small Signal Parameters Extraction for Silicon MOS Transistors
Small Signal Parameters Extraction for Silicon MOS Transistors A.Bracale #*, D.Pasquet #, J.L.Gautier #, V.Ferlet *, N.Fel *, J.L. Pelloie **. # ENSEA, équipe microonde, 6 avenue du Ponceau, 95014 Cergy-Pontoise, France. * CEA, Centre de Bruyères-Le-Châtel, BP 12, 91680 Bruyères-Le-Châtel, France. Tel : 33 1 69 26 50 88. Fax : 33 1 69 26 70 53. E-mail server address: http:\\ bruyères.cea.fr. ** C
A Wavelet Based Self-Adaptive Mesh for Semiconductor Devices Simulation.
A Wavelet Based Self-Adaptive Mesh for Semiconductor Devices Simulation. S. Goasguen and S. M. El-Ghazaly Telecommunications Research Center Department of Electrical Engineering, Arizona State University Tempe, Arizona 85287-5706 USA Abstract-A MESFET is simulated using a nonuniform mesh generated by an interpolating wavelet scheme. The wavelet coefficient threshold controls the compression rati
APPLICATION OF A HY RID METHOD TO MODEL ACTIVE MICROWAVE COMPONENTS AND CIRCUITS
APPLICATION OF A HYBRID METHOD TO MODEL ACTIVE MICROWAVE COMPONENTS AND CIRCUITS E.Larique, A.Laloue, D.Baillargeat, S.Verdeyme, M.Aubourg, R.Quere, P.Guillon* C.Zanchi, J.Sombrin** *IRCOM Faculté des Sciences de Limoges 87060 Limoges Cedex FRANCE **CNES 18 Avenue Edouard Belin 31055 Toulouse Cedex France larique@asu.edu babs@ircom.unilim.fr Abstract: This paper presents an application of a gl
Low Cost Planar Filter for 60GHz Applications
Low Cost Planar Filter for 60GHz Applications Yoshihisa AMANO, Atsushi YAMADA, Eiji SUEMATSU, Hiroya SAT0 Advanced Technology Research Laboratories, SHARP Corporation 2613-1, Ichinomoto-cho, Tenri, Nara, 632-8567 Japan Te1: 81-7436-5-2485, Fax: 81-7436-5-2487, E-mail: amano@mic.tnr.sharp.co.jp Abstract - A low-cost printed planar filter circuit on alumina ceramic substrates was developed at 60GHz