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37-40GHz MMIC Sub-Harmonically Pumped Image Rejection Diode Mixer
37-40GHz MMIC Sub-Harmonically Pumped Image Rejection Diode Mixer F. Rasà *, F. Celestino *, M. Remonti *, B. Gabbrielli *, P. Quentin ** * ALCATEL ITALIA, TSD-HCMW R&D, Str. Provinciale per Monza, 33, 20049 Concorezzo (MI) - ITALY ** UNITED MONOLITHIC SEMICONDUCTORS, RD128, BP46, 91401 Orsay, Cedex -FRANCE francesco.rasa@netit.alcatel.it francesco.celestino@netit.alcatel.it marcodaniele.remonti@
A J-band Transceiver MMIC with image rejection
A J-band Transceiver MMIC with image rejection C. A. Zelley, P. A. Gould* , P. D. Munday and R. W. Ashcroft * DERA, Malvern, Worcestershire, United Kingdom Bell Laboratories, Lucent Technologies, Swindon, UK. Email: cazelley@dera.gov.uk Abstract - This paper describes a J-band (15 GHz) transceiver MMIC with image rejection that has been designed for RADAR T/R module applications. The MMIC consis
Adaptive Modeli g of Complex Packagi g Geometries Usi g Haar-based MRTD Algorit ms
Adaptive Modeling of Complex Packaging Geometries Using Haar-based MRTD Algorithms B.McGarvey, D.Staiculescu, M.Tentzeris and J.Laskar daniela@ece.gatech.edu, etentze@ece.gatech.edu, joy.laskar@ece.gatech.edu Packaging Research Center School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta, GA 30332-0250 Abstract - The Haar-based MRTD algorithm is applied to the desi
Design to reliability shielded vertical interconnection applied to microwave Chip Scale Packaging
Design to reliability shielded vertical interconnection applied to microwave Chip Scale Packaging P. MONFRAIX(1), T. ADAM(1), J. L. LACOSTE(1), C. DREVON(1), G. NAUDY(1), B. COGO(1), J.L. CAZAUX(1), J.L. ROUX(2) ALCATEL SPACE INDUSTRIES, 26 avenue J.F. CHAMPOLLION 31037 TOULOUSE CEDEX, France Tel : +33 (0)5 34 35 60 70, Fax : +33 (0)5 34 35 69-47 E-mail : Philippe.Monfraix@space.alcatel.fr (2) (1)
Modelling of 3D Multilayer Coplanar Waveguide Structure with Incorporated Wideband Vertical Interconnection
Modelling of 3D Multilayer Coplanar Waveguide Structure with Incorporated Wideband Vertical Interconnection M. R. Mahmood (Student Member, IEEE), Z. R. Hu (MIEEE) Department of Electronic Engineering, King's College London, University of London, Strand, London, WC2R 2LS, United Kingdom. mohd.mahmood@kcl.ac.uk zhirun.hu@kcl.ac.uk Abstract - The characteristics of three-dimensional (3D) multilayer
Flip-chip for space applications : Bonding reliability, DC and RF results.
Flip-chip for space applications : Bonding reliability, DC and RF results. Sébastien George, Claude Drevon, Jean-Louis Cazaux ALCATEL SPACE INDUSTRIES - BP1187 - 31037 TOULOUSE Cedex1 - France sebastien.george@space.alcatel.fr Abstract - This paper presents a study of flip-chip bonding for space applications. DC and mechanical test vehicles have demonstrated the reliability of the flip-chip gold-
FULLY INTEGRATED Ka/K BAND HERMETIC RECEIVER MODULE
FULLY INTEGRATED Ka/K BAND HERMETIC RECEIVER MODULE M.C.Comparini, M.Feudale, J.R.Linkowski, P.Ranieri, A.Suriani Alenia Spazio S. p. A., RF and Microwave Engineering Via Saccomuro 24, 00131 Rome, Italy phone: 39-6-4151-2583 fax: 39-6-4151-2507 e-mail: j.linkowski@roma.alespazio.it Abstract This paper presents an Engineering Model of a fully integrated, hermetic receiver as developed for commerci
A MMIC BROAD-BAND 90° POWER DIVIDER USING A NEW ALL-PASS ACTIVE FILTER
A MMIC BROAD-BAND 90° POWER DIVIDER USING A NEW ALL-PASS ACTIVE FILTER H. Simon, R. A. Périchon LEST, UMR CNRS 6616, UFR Sciences et Techniques 6, av. Le Gorgeu - BP 809 - 29285 BREST CEDEX - France Tel : 02 98 01 62 39 - Fax : 02 98 01 63 95 - E-mail: perichon@univ-brest.fr Abstract : The design and performances of a new broad-band active MMIC 90° power splitter are described. The chip provides
ULTRA BROADBAND LOW POWER MMIC AMPLIFIER
ULTRA BROADBAND LOW POWER MMIC AMPLIFIER Vesna Radisic, Sander Weinreb*, Miro Micovic, Ming Hu, Paul Janke, Catherine Ngo, Duane Harvey, Mehran Matloubian**, and Loi Nguyen HRL Laboratories, LLC, Malibu, CA 90265, USA * Jet Propulsion Laboratory, Pasadena, CA 91109, USA ** Smart Technology Ventures, Beverly Hills, CA 90212, USA Abstract - A low power two-stage InP HEMT MMIC amplifier has been
A 70-GHz Bandwidth and 9-dB Gain Travelling Wave Amplifier Using 0.15um Gate InGaP/InGaAs HEMTs with Coplanar Transmission Line Technology
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