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Low Loss On-chip Passive Components for Si-MMIC by using CPW Structure
Low Loss On-chip Passive Components for Si-MMIC by Using CPW Structure N. Sueamtsu *, M. Ono * and K.Nakajima * * Information R&D Center, Mitsubishi Electric Corporation, 5-1-1 Ofuna, Kamakura-city, Kanagawa 247-8501, Japan, e-mail: suematsu@isl.melco.co.jp ABSTRACT Si-MMIC's become the key components to realize low cost single chip RF sections for mobile communication terminals. To realize on-chi
Mixed Mode Silicon-on-Insulator MMIC Technology for Digitally Controlled RF/Microwave Systems
Mixed Mode Silicon-on-Insulator MMIC Technology for digitally controlled RF/Microwave Systems Jeff Kriz Honeywell, Solid State Electronic Center, 2C22 12001 Hwy 55 Plymouth, MN 55441, USA jeffrey.j.kriz@honeywell.com http://www.ssec.honeywell.com ABSTRACT A high performance mixed mode Silicon-On-Insulator (SOI) IC process has been developed providing the ability to integrate digital, analog, RF a
A Fuly Integrated Silicon-Germanium X-band VCO
A FULLY INTEGRATED SILICON-GERMANIUM X-BAND VCO Leonardo Masini *, Massimo Pozzoni §, Alberto Caliumi *, Luciano Tomasini +, Damiana Morigi *, Frederic Lemaire * Laboratori Fondazione Guglielmo Marconi- via Porrettana 123- I 40044 Pontecchio Marconi (Bo) Italytel.+39 51 6781911 fax. +39 51 846479 e-mail leonardo.masini@labs.it § STmicroelectronics via Tolomeo 1 20010 Cornaredo (Mi) tel.+39 2 9
NMOS SPDT Switch MMIC with >44 dB Isolation & 30dBm IIP3 for applications within GSM and UMTS bands
NMOS SPDT Switch MMIC with >44 dB Isolation and 30 dBm IIP3 for Applications within GSM and UMTS bands. P. Gould1, J. Lin2, O. Boric-Lubecke2. 1 Bell Laboratories, Lucent Technologies, Swindon, UK, SN5 6PP, pgould1@lucent.com 2 Bell Laboratories, Lucent Technologies, Murray Hill, NJ, USA. ABSTRACT This paper describes the first reported, fully integrated, 0.25µm NMOS SPDT switch MMIC, for GSM an
Vertical Cavity Surface Emitting Laser for Operation at 1.5µm with Integral AlGaInAs/InP Bragg Mirrors
Vertical Cavity Surface Emitting Laser for Operation at 1.5 µm with Integral AlGaInAs/InP Bragg mirrors M. Linnik and A. Christou Department of Materials and Nuclear Engineering and Materials Research Science and Engineering Center, University of Maryland, College Park MD 20742 christou@eng.umd.edu ABSTRACT The design and performance of a low threshold selectively oxidized Vertical Cavity Surface
40 Gbit/s GaAs MMIC Signal Processor for Optical Communication Systems
40 Gbit/s GaAs MMIC Signal Processor for Optical Communication Systems Paulo P. Monteiro (paulom@det.ua.pt), Manuel Violas (manuelv@det.ua.pt), Rui Sousa Ribeiro (rr@det.ua.pt), José Ferreira da Rocha (frocha@ieee.org) Instituto das Telecomunicações / Universidade Aveiro Campus Universitário de Santiago, 3810 Aveiro, Portugal Tel. +351 234 377900, Fax. +351 234 377901 ABSTRACT We will present the
High Tuning Speed Optical Receiver Front-End for Packet-Switched WDM Networks
HIGH TUNING SPEED OPTICAL RECEIVER FRONT-END FOR PACKET-SWITCHED WDM NETWORKS S, K. Manfrin , G. Orengo , F. Giannini , M. A. Romero 1 l 2 2 3 3 Centro de Pesquisa e Desenvolvimento em Informática e Automação - CPDIA, Praça das Orquídeas, 44/52, CEP 06453-000, Alphaville, Barueri, SP, Brazil 2 Department of Electronic Engineering, University of Rome "Tor Vergata", Via Tor Vergata, 110,00133,
Efficient CM-FEM Modeling of Coplanar Waveguides for High-Speed e/o Modulators
Efficient CM-FEM modeling of coplanar waveguides for high-speed e/o modulators Francesco Carbonera, Francesco Bertazzi, Michele Goano, Giovanni Ghione Dipartimento di Elettronica, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Italy E-mail: ghione@polito.it Abstract A general approach is proposed for the accurate and efficient computation of the characteristic parameters of coplanar wa
Pulsed Power Operation of Commercially Available Silicon Carbide MESFETs
PULSED POWER OPERATION OF COMMERCIALLY AVAILABLE SILICON CARBIDE MESFETS Mark G. Walden GaAs IC Group, Roke Manor Research Limited Roke Manor, Romsey, Hampshire, SO51 0ZN, UK mark.walden@roke.co.uk ABSTRACT Sample devices of commercially available SiC MESFETs were measured under pulsed conditions. The results show significant improvements over traditional III-V devices measured under the same cond
Parameter Extraction and Evaluation of the Bias Dependence of Tf, for the VBIC Model used on a GaAs HBT
Parameter Extraction and Evaluation of the Bias Dependence of Tf, for the VBIC Model used on a GaAs HBT. Morten Olavsbråten, Norwegian Institute of Science and Technology (NTNU) Dept. of telecommunication, O.S.Bragstadsplass 2B, N-7491 Trondheim, Norway Tel: +47 73594306, Fax: +47 73507322, E-mail: olavsbraten@ieee.org ABSTRACT This paper presents a practical method of extracting the bias dependen