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Accurate Microwave Large-Signal Model for Thinned Metamorphic HEMTs on Germanium, Aimed for Low-Power Non-Linear MCM-D Circuit Applications
ACCURATE MICROWAVE LARGE-SIGNAL MODEL FOR THINNED METAMORPHIC HEMTS ON GERMANIUM, AIMED FOR LOW-POWER NON-LINEAR MCM-D CIRCUIT APPLICATIONS D. Schreurs, R.Vandersmissen*, P. Mijlemans**, and G. Borghs* K.U.Leuven, Div. ESAT-TELEMIC, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium Phone: +32-16-321821, Fax: +32-16-321986, e-mail: Dominique.Schreurs@esat.kuleuven.ac.be *IMEC, MCP/NM, Kapeldreef 75,
Harmonic and Intermodulation Distortion Analysis of the InGaP/GaAs DHBT
Harmonic and Intermodulation Distortion Analysis of the InGaP/GaAs DHBT C. N. Dharmasiri, P. J. Langlois and A. A. Rezazadeh Department of Electronic Engineering, King's College, University of London, Strand, WC2R 2LS, UK, Tel/Fax: +44(0) 20 7848 2879, Email: chalika.dharmasiri@kcl.ac.uk ABSTRACT Low frequency two-tone harmonic and intermodulation distortion of the InGaP/GaAs DHBTs are studied th
Surface Microrelief Transformation Induced by Laser During Thin Film Growth on the (001) GaAs by CBE Method
Surface microrelief transformation induced by laser during thin film growth on the (001) GaAs by CBE method D.V. Lioubtchenko*, T.J. Bullough**, T.A. Briantseva*** * Radio Laboratory, Helsinki University of Technology, P.O. Box 3000, Otakaari 5A, Espoo, FIN-02015 HUT, Finland, phone: +358 9 4512219; fax: +358 9 4512152, email: dmitri@cc.hut.fi ** Department of Engineering, Materials Science and En
New Large Signal Electrical Model of GAAS MESFET Under Optical Illumination
NEW LARGE SIGNAL ELECTRICAL MODEL OF GAAS MESFET UNDER OPTICAL ILLUMINATION J.M. Zamanillo, C. Navarro, J. Sáiz-Ipiña, C.Pérez-Vega and A. Mediavilla University of Cantabria -Communications Engineering Department (DICOM) Av. de los Castros s/n. 39005, Santander, Spain Phone +34-942-200887, Fax +34-942-201488, E-mail: jose.zamanillo@unican.es ABSTRACT A new large-signal electrical model for GaAs ME
Nonlinear VCSEL Models and Integrated Driver Development
Nonlinear VCSEL Models and Integrated Driver Development *Edward Gebara1, Magnus Andersson2, Christina Carlson2, Youngsuk Suh1, Herbert Zirath2, Anders Larsson2 and Joy Laskar1 Georgia Institute of Technology, School of Electrical and Computer Engineering, 791 Atlantic Drive Atlanta, GA, 30332 USA E-mail: gebara@ee.gatech.edu, Phone: +(1) 678 641-1723, Fax: +(1) 404 894-0222 2 1 Chalmers Universi
An Isothermal Gummel-Poon Model Parameter Extraction of HBT for Self-Heating Effects Using Pulsed Measurements
An Isothermal Gummel-Poon Model Parameter Extraction of HBT for Self-Heating Effects Using Pulsed Measurements Hyun-Min Park, Sangsoo Ko, and Songcheol Hong Dept. Electrical Engineering and Computer Science (EECS) Korea Advanced Institute of Science and Technology (KAIST) 373-1, Kusong-dong, Yusong-gu, Taejon, 305-701, Korea Tel: +82-42-869-5471 Fax: +82-42-869-8560 Email: hmpark@eeinfo.kaist.ac.k
Characterization of Parasitic Elements Effect of GaAs PIN Diode for Microwave and Millimeter - Wave Switch
Characterization of Parasitic Elements Effect of GaAs PIN Diode for Microwave and Millimeter- Wave Switch. Millimeter Hideki Takasu Microwave Solid-State Engineering Department, Komukai Operations, Toshiba Corporation. 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8581, Japan TEL:+81-44-548-5282, FAX:+81-44-548-5955 e-mail address: hideki.takasu@toshiba.co.jp Abstract-- To design and develop lo
A 2D Numerical Solver for Heterostructure Device Modelling
A 2D NUMERICAL SOLVER FOR HETEROSTRUCTURE DEVICE MODELLING R. Luzzi, A. Trifiletti, D. Valenzisi Electronic Engineering Department, University of Rome "La Sapienza", Via Eudossiana 18, I-00184, Roma, Italy. Phone: +39 6 44585679, Fax: +39 6 4742647, e-mail: trifiletti@die.ing.uniroma1.it. ABSTRACT In this paper a 2D numerical solver for the static analysis of heterostructure devices is presented.
A New Procedure for Distance-Dependent Statistical Non-Linear Modelling of GaAs FETs
A NEW PROCEDURE FOR DISTANCE-DEPENDENT STATISTICAL NON-LINEAR MODELLING OF GAAS FET'S F. Centurelli*, A. Di Martino**, P. Marietti*, G. Scotti*, P. Tommasino*, A. Trifiletti* *Electronic Engineering Department, University of Rome "La Sapienza", Via Eudossiana 18, I-00184, Roma, Italy. Phone: +39 6 44585679, Fax: +39 6 4742647, e-mail: trifiletti@die.ing.uniroma1.it. **STMicroelectronics, Stradale
A Spline-Based Nonlinear Large-Signal FET Modelling for Thermal and Trap Effects Using Pulsed I-V Measurements
A Spline-Based Nonlinear Large-Signal FET Modeling for Thermal and Trap Effects Using Pulsed I-V Measurements Kyoungmin Koh, Sangsoo Ko, Hyun-Min Park, and Songcheol Hong Department of Electrical Engineering and Computer Science (EECS) Division of Electrical Engineering of Korea Advanced Institute of Science and Technology (KAIST) 373-1, Kusong-dong, Yusong-gu, Taejon, 305-701, Korea Tel: +82-42-8