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Power RF-Operation of AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates
Power RF-Operation of AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates Richard Lossy1, Peter Heymann1, Joachim Würfl1, Nidhi Chaturvedi1, Stefan Müller2 and Klaus Köhler 2 1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße11, 12489 Berlin,Germany 2 Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastraße 72, 79108 Freiburg, Germany Phone: +49 30 63
C-Band Resistive SiC-MESFET mixer
C-Band Resistive SiC-MESFET mixer Kristoffer Andersson, Joakim Eriksson, Niklas Rorsman, Herbert Zirath Microwave Electronics Laboratory, Chalmers University of Technology, Sweden Phone: +46-(0)-31-772 89 32, Fax: +46-(0)-31-16 45 13 E-mail: kristoffer.andersson@ep.chalmers.se Abstract-- In this paper the design and characterization of a linear C-band single ended resistive SiC-MESFET mixer is pr
Mixed Signal High Integration MMIC Phase Control Device for Application in Phased-Arrays
Mixed Signal High Integration MMIC Phase Control Device for Application in Phased-Arrays A. Toshev, M.W. van der Graaf*, A.P. de Hek*, A. de Boer*, R. Arnaudov, I. Vineshki, S. Kamenopolsky, Z. Hlebarov** Sky Gate BG, 2A Mogilata str., 1700-Sofia, Bulgaria, e-mail: toshev_a@skygate.bg * TNO Physics and Electronics Laboratory, P.O. Box 96867, 2509JG The Hague, The Netherlands, E-mail: vanderGraaf@f
Fast Tuning Electronically Switched 16 x 1 Channel Receiver For Packet-Switched WDM Systems
Fast Tuning Electronically Switched 16 x 1 Channel Receiver For Packet-Switched WDM Systems S. K. Manfrin*, M. De Dominicis, G. Orengo, F. Giannini, M. A. Romero** Department of Electronic Engineering, University of Rome "Tor Vergata", Via Politecnico 1, 00133, Rome, Italy, tel. +39 06 7259 7345, fax.7343, e-mail: orengo@ing.uniroma2.it * Centro de Pesquisa e Desenvolvimento de Informática e Autom
Highly Linear Mixer
A Highly Linear Mixer For Zero-IF Bluetooth Receiver A. Cidronali, G. Collodi, I. Magrini, G. Manes Dept. Electronics and Telecommunications, University of Florence, V.S.Marta, 3 I-50139 Firenze ITALY, e-mail acidronali@ing.unifi.it, # tel.: +39.055.4796766, # fax: +39.055.494569 In this paper a compact and highly linear monolithic integrated circuit (MMIC) suitable for zero-IF Bluetooth receive
GaAs_15_Boer.PDF
Highly-Integrated X-band Multi-function MMIC with Integrated LNA and Driver Amplifier A. de Boer, J.A. Hoogland, E.M. Suijker, M. van Wanum, F.E. van Vliet TNO Physics and Electronics Laboratory, P.O. Box 96864, 2509 JG The Hague, The Netherlands, Phone: 31.70.374.04.02, Fax: 31.70.374.06.54, Email: deboer@fel.tno.nl The design and performance of a highly integrated X-band multi-function MMIC with
GaAs_15_Avitabile.PDF
A 18 GHz MMIC biquad active filter G. Avitabile, B. Chellini, F. Giannini*, E. Limiti* Dipartimento di Elettronica e Elettrotecnica, Politecnico di Bari, v. Orabona, 4, 70125 Bari, Italy, gfa@poliba.it * Dipartimento di Elettronica, Università di Roma "Tor Vergata", v.le Politecnico, 1, 00133 Roma, Italy, limiti@ing.uniroma2.it A high-Q bandpass biquad filter operating at 18GHz is proposed. It is
Paper Submission Template for 2002 European Microwave Week (EuMC/GAAS/ECWT)
Scalable Large Signal Modeling of InGaP/GaAs HBT for CAD Tools Y.S. Suh, K.-Y. Han, C.-H. Ahn, D. Heo* YeungNam University, Dept. EECS, KyongSan, 712-749, South Korea, yssuh@yu.ac.kr * Georgia Tech, MIRC 791 Atlantic Drive N.W. Atlanta GA 30332 A new HBT current source model and the corresponding direct parameter extraction methods are presented. Exact analytical expressions for the current source
Transient Analysis of Collector Current Collapse In Power HBTs
Transient Analysis of Collector Current Collapse In Power HBTs R. Sommet, D. Lopez, R. Quéré I.R.C.O.M. - C.N.R.S. U.M.R. n° 6615,I.U.T. G.E.I.I.,7, rue Jules Vallès 19100 Brive la Gaillarde sommet@brive.unilim.fr This paper describes the dynamic of the current collapse phenomenon that can occur in a multifinger power HBT. The electrothermal model used is a self consistent model based on an electr
Noise, Large-Signal Modeling and Characterization of InP/InGaAs HBTs
Noise, Large-Signal Modeling and Characterization of InP/InGaAs HBTs N. Lal, S. Nuttinck, A. Raghavan, E. Gebara*, S. Venkataraman, J. Papapolymerou and J. Laskar School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, neeraj@ece.gatech.edu *Quellan Inc., 250 14th Street NW, Atlanta, GA 30318, edward@quellan.com ABSTRACT -- We developed a robust large-sig