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Feedback Amplifier based on an Embedded HEMT in Thin-film Multilayer MCM-D Technology
Feedback Amplifier based on an Embedded HEMT in Thin-film Multilayer MCM-D Technology Raf Vandersmissen1, Dominique Schreurs2, Geert Carchon1, and Gustaaf Borghs1 1 IMEC, MCP, Kapeldreef 75, B-3001 Leuven, BELGIUM, +32-16-288056, raf.vandersmissen@imec.be 2 K.U.Leuven, ESAT/TELEMIC, Kasteelpark Arenberg 10, B-3001 Leuven, BELGIUM Abstract -- In this paper a feedback amplifier circuit integrated
Wafer Level Integration of a 24 GHz Differential SiGe-MMIC Oscillator with a Patch Antenna using BCB as a Dielectric Layer
Wafer Level Integration of a 24 GHz Differential SiGe-MMIC Oscillator with a Patch Antenna using BCB as a Dielectric Layer ¨ P. Abele1 , E. Ojefors2 , K.-B. Schad1 , E. S¨ nmez1 , A. Trasser1 , J. Konle3 , and H. Schumacher1 o Dept. of Electron Devices and Circuits, University of Ulm Albert-Einstein-Allee 45, D-89081 Ulm, Germany email: pabele@ebs.e-technik.uni-ulm.de Phone: +49 731 5031593 Fax: +
A Chip-Scale Packaged Amplifier MMIC using Broadband Hot-Via Transitions
A Chip-Scale Packaged Amplifier MMIC using Broadband Hot-Via Transitions A. Bessemoulin1, Member, IEEE, C. Gaessler2, P. Marschall3, P. Quentin1 1 United Monolithic Semiconductors S.A.S, Route Départementale 128 BP46, F-91401 Orsay Cedex, France 2 United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, D-89081 Ulm, Germany 3 Daimler Chrysler REM/CF, Wilhelm-Runge-Strasse 11, D-89081 Ul
An 1 GHz Class E LDMOS Power Amplifier
An 1 GHz Class E LDMOS Power Amplifier Andreas Ådahl, Herbert Zirath Microwave Electronics Laboratory, Chalmers University of Technology, Sweden Phone: +46-(0)-31-772 50 48, Fax: +46-(0)-31-16 45 13 E-mail: adahl@ep.chalmers.se Abstract--A class E power amplifier working at 1 GHz and with an LDMOS transistor as switching element has been developed. The circuit is implemented with lumped and distr
A Simple Technique for Improving the IM3/C and PAE Performance of MESFET Amplifiers
A Simple Technique for Improving the IM3/C and PAE Performance of MESFET Amplifiers J N H Wong and C S Aitchison Microwave Systems Research Group, Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, UK Abstract -- This paper shows by simulation that a shunt short -circuited /4 line placed across the drain terminals of a microwave MESFET amplifier significantly improves
Biasing Circuits for Voltage Controlled GSM Power Amplifiers
Biasing Circuits for Voltage Controlled GSM Power Amplifiers André van Bezooijen1 , Dima Prikhodko1 and A.H.M. van Roermund2 2 Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands Eindhoven University of Technology, Den Dolech 2, 5600 MB Eindhoven, The Netherlands 1 Abstract -- In GSM phones voltage controlled power amplifiers are used to vary the output power. Inaccuracies in
10 W High Efficiency 14V HBT Power Amplifier for Space Applications
10 W High Efficiency 14V HBT Power Amplifier for Space Applications N. LE GALLOU* , J.F.VILLEMAZET* ,B. COGO*, J.L CAZAUX*, A. MALLET**, L. LAPIERRE ** * ALCATEL SPACE, 26 Av. JF Champollion, 31037 Toulouse cedex, FRANCE ** CNES (French Space Agency), 18 Av. E. Belin 31401 Toulouse cedex 4, France e-mail : Nicolas.Le-Gallou@space.alcatel.fr / Fax : +33 5 3435 6947 http://www.alcatel.com/space Abst
Mobile Phone Power Amplifier Linearity and Efficiency Enhancement Using Digital Predistortion
Mobile Phone Power Amplifier Linearity and Efficiency Enhancement Using Digital Predistortion N. Ceylan1, J.E. Mueller1, T. Pittorino1, R. Weigel2 1 Infineon Technologies, Secure Mobile Solutions, Kastenbauerstr. 2, 81677 Munich, Germany, Phone:+498923420839 2 University of Erlangen, Department of Technical Electronics, Cauerstr. 9, 91058 Erlangen, Germany, Phone:+4991318527195 this purpose AM-AM
A Novel Optically-Controlled Microwave Switch On Semiconductor Substrates For an ON/OFF Ratio Enhancement
A Novel Optically-Controlled Microwave Switch On Semiconductor Substrates For an ON/OFF Ratio Enhancement C.Canseliet 1, C.Algani 1, F.Deshours 1, G.Alquie 1, S.Formont 2, J.Chazelas 2 LISIF-4 place Jussieu-BP 252-75252 Paris Cedex 05-France Tel: +33 1 44 27 74 59 Fax: +33 1 44 27 46 62 E-mail :charlotte.canseliet@lis.jussieu.fr 2 Thales Airborne Systems-2, avenue Gay Lussac CN-675-78852 Elancou
A NEW NUMERICAL APPROACH IN THE LINEAR ANALYSIS OF RF AMPLIFIERS
A NEW NUMERICAL APPROACH IN THE LINEAR ANALYSIS OF RF AMPLIFIERS Adriano de Andrade Mello(), Henry Douglas Rodrigues(), José de Souza Lima() Marcos Paulo de Souza Silva(*), Maurício Silveira(*) * National Institute of Telecommunication INATEL João de Camargo Avenue 510, Phone: +55 35 3471-9332 P.O. Box: 05, Web Page: http://www.inatel.br 37540-000, Santa Rita do Sapucaí, MG, Brazil () Linea