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Statistical modelling of electron devices based on an equivalent-voltage approach
Statistical modelling of electron devices based on an equivalent-voltage approach I.Melczarsky1, A.Costantini1 , G.Zucchelli1 , R.P.Paganelli2, A.Santarelli1 , G.Vannini3 , F.Filicori1 1 2 DEIS University of Bologna, Viale Risorgimento 2, 40136 Bologna, Italy, acostantini@deis.unibo.it IEIIT CNR, Viale Risorgimento, 2, 40136 Bologna, Italy, rpaganelli@deis.unibo.it 3 Department of Engineering
Advancement in T/R Module Interconnects
Advancement in T/R Module Interconnects Andrew J. Piloto1, Reiichi Yamada1, Jerry Burgess2, and Rick Hall2 1 Kyocera America, Inc., 8611 Balboa Avenue, San Diego, CA 92123, USA, 858-576-2600 2 Corning Gilbert, Inc., 4201 N. 47th Avenue, Phoenix, AZ 85031, USA, 800-651-8869 ABSTRACT -- Emerging RF systems which incorporate active phased array antenna subsystems demand major improvements in the mi
Power HBT reliability for space applications
Power HBT reliability for space applications Ph AUXEMERY1, G.PATAUT1, H.BLANCK², W.DOSER² (1) United Monolithic Semiconductors RD128 91401 Orsay France (2) United Monolithic Semiconductors GmbH Wilhelm-Runge Strasse 11 89081 ULM GERMANY Abstract -- High power HBT process developed by UMS for X-band application have been space evaluated under CNES and ESA funding. The reliability assessment plan fe
GAAS , advanced rf cmos and silicon components for miniaturised spacedigital receiver
M.Arena, F.Belperio, L.Calderone, M.C.Comparini, C.Leone, L.Simone Alenia Spazio S.p.A.,Via Saccomuro 24, 00131 Roma, Italy, Phone: +39 06 41512488 Fax: +39 06 41512507 Email: c.leone@roma.alespazio.it $EVWUDFW 7KLV SDSHU SUHVHQWV WKH HOHFWULFDO DQG WHFKQRORJLFDO GHVLJQ IRU WKH QHZ JHQHUDWLRQ RI 7HOHPHWU\ DQG 7HOHFRPPDQG 77 & UHFHLYHUV IRU VDWHOOLWH DSSOLFDWLRQ LQ .D %DQG 7KH FRQJHVWLRQ RI WKH 6E
Perspective of RF CMOS/Mixed Signal Integration in Next Perspective of RF CMOS/Mixed Signal Integration in Next
Perspective of RF CMOS/Mixed Signal Integration in Next Generation Satellite Systems Ronald E. Reedy, Chief Technology Officer, rreedy@peregrine-semi.com Peregrine Semiconductor Corporation, San Diego, CA 92121, USA Massimo Claudio Comparini, Head of Equipment, Alenia Spazio, Roma, Italy Modern satellite systems require integrated circuits capable of meeting performance, power consumption, price,
Microwave Technologies for Satellite Systems: an ESA Perspective
Microwave Technologies for Satellite Systems: an ESA Perspective François Deborgies ESA-ESTEC, TOS-ETP, Keplerlaan 1, 2201AZ Noordwijk, The Netherlands, +31 (0)71 565 5696, Francois.Deborgies@ESA.int Abstract -- This paper intends to review the trends in solid-state microwave technologies and their impact on the anticipated performance enhancement expected for space applications. I. INTRODUCTION
Thermal Stability of Beryllium Doped InP/InGaAs Single and Double HBTs Grown by Solid Source Molecular Bearn Epitaxy
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The Effects of Compositionally Graded Bases and Annealing on InGaP-GaAs HBTs Grown by MBE using a GaP Decomposition Source
The Effects of Compositionally Graded Bases and Annealing on InGaP-GaAs HBTs Grown by MBE using a GaP Decomposition Source Jin Hyoun Joe1 and Mohamed Missous1 1 University of Manchester Institute of Science and Technology, Department of Electrical Engineering & Electronics Sackville Street, Manchester M60 1QD, England, U.K. Phone : +44 161 200 4797 E-Mail : J.Joe@postgrad.umist.ac.uk and missous@
STUDY OF TEMPERATURE DEPENDENCE OF TURN-ON VOLTAGES IN III-V HBTS
STUDY OF TEMPERATURE DEPENDENCE OF TURN-ON VOLTAGES IN III-V HBTS H Sheng1, A A Rezazadeh current address: NortelNetworks, Ottawa, Canada Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology (UMIST), PO Box 88, Manchester, M60 1QD, UK 1 Abstract- We report variation of collector and base currents with temperature from 80K-400K on InGaA
Mechanism of Current Gain increase of Heterostructure Bipolar Transistors Passivated by Low-Temperature Deposited SiNx
Mechanism of Current Gain increase of Heterostructure Bipolar Transistors Passivated by Low-Temperature Deposited SiNx Z. Jin, S. Neumann, W. Prost, and F.-J. Tegude Solid-State Electronics Department, University Duisburg-Essen, Lotharstrasse. 55, ZHO, 47048 Duisburg, Germany. Abstract -- The graded base InGaAs/InP heterostructure bipolar transistors (HBTs) were passivated by the low-temperature