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EuMC: LTCC Quad Band GSM RF Transceiver Using Integrated Passive Matching Network
LTCC Quad Band GSM RF Transceiver Using Integrated Passive Matching Network Y. H. Park 1,2, H. R. Kim1, K. J. Oh2, Y. H. Cho2, B. S. Kim1 Sungkyunkwan University, School of Information and Communication Engineering, Chunchun, Jangan, Suwon, 440330, Korea, 82-31-290-7225 2 Samsung Electro-Mechanics, Co, Ltd., Mobile-RF Team, 314, Maetan, Yongtong, Kyuunggi, Suwon, 443-743, Korea, 82-31-218-2948 1
EuMC: Microwave Measurements of Thickness and Conductivity of Nanometer Metal-Semiconductor Structures
Microwave measurements of thickness and conductivity of nanometer metal-semiconductor structures A.V. Abramov, D.A. Usanov, A.V. Skripal, A.S. Bogolyubov Saratov State University, Moskovskaya 155, 410012 Saratov, Russia, (+7)8452 514563 Abstract -- Method for nondestructive multiparameter check of electrophysical parameters of nanometer metalsemiconductor structures using frequency dependence of
EuMC: Design and Testing of Frequency Selective Surfaces on Thick Silicon Substrate Operating at 600 GHz
Design and Testing of Frequency Selective Surfaces on Thick Silicon Substrate Operating at 600 GHz S. Biber1 , M. Bozzi2 , O. G¨ nther1 , L. Perregrini2 , and L.-P. Schmidt1 u 1 Institute for Microwave Technology, University of Erlangen-Nuremberg, Germany 2 Department of Electronics, University of Pavia, Italy B b A aluminum silicon Abstract-- This paper describes the design and experimental ver
EuMC: Multilayer RF PCB for Space Applications: Technological and Interconnections Trade-Off
Multilayer RF PCB for Space Applications : technological and interconnections trade-off M. Paillard 1 , F. Bodereau 1, C. Drevon 1, P. Monfraix 1, J.L. Cazaux 1 L.Bodin 2, P. Guyon 2 Alcatel Space, 26 Avenue Champollion, BP1187, F-31037 Toulouse, France mathieu.paillard@space.alcatel.fr, Tel : +33 (0)5 34 35 37 73, Fax: +33 (0)5 34 35 69 47 2 Cimulec, Z.I "les Jonquières", F-57365 Ennery, France l
EuMC: Modelling of a 4--18GHz 6W Flip-Chip Integrated Power Amplifier Based on GaN HEMTs Technology
Modelling of a 4-18GHz 6W Flip-Chip Integrated Power Amplifier based on GaN HEMTs Technology Sandra De Meyer1, Audrey Philippon1, Michel Campovecchio1, Christophe Charbonniaud1, Stéphane Piotrowicz2, Didier Floriot2, Raymond Quéré1 1 IRCOM-MITIC, CNRS UMR 6615, 123 Avenue A. Thomas, 87000 Limoges, France, (33)5-55-45-77-34 2 Thalès-TRT-MITIC, Domaine de Corbeville, 91404 Orsay Cedex, France, (33)
EuMC: Nonlinear Response of Ba_xSr_1-xTiO_3 Planar and Parallel-Plate Capacitors to Microwave Power: Comparative Study of Power Handling Capability
Nonlinear Response of BaxSr1-xTiO3 Planar and Parallel-Plate Capacitors to Microwave Power: Comparative Study of Power Handling Capability A.Kozyrev1, A.Ivanov1, T.Samoilova1, O.Soldatenkov1, M.Zelner2, I.P.Koutsaroff2, T.A.Bernacki2, A.Cervin-Lawry2 1 Electrotechnical University of St-Petersburg, Prof. Popov Str. 5, 197376 Russia, Phone/fax +7 (812) 234 48 09 2 Gennum Corporation, 970 Fraser Dri
EuMC: A Novel Method for Beat Frequency Error Correction for a Low Cost FMCW Radar Using VCO Sweep Characteristics
A Novel Method for Beat Frequency Error Correction for a Low Cost FMCW Radar Using VCO Sweep Characteristics Jung Dong Park, Wan Joo Kim, Chang Won Lee Agency for Defense Development, Yuseong P.O.Box 35-5, Daejeon, 305-600, Republic of Korea, Tel : +82-42-821-4126 Abstract -- In this paper, we present a simple nonlinearity correction method for a linear frequency modulated continues wave (FMCW) ra
EuMC: An Examination of Electromagnetic Field Using CIP and Characteristic Curve Methods
An Examination of Electromagnetic Field Using CIP and Characteristic Curve Methods Shinya Watanabe* and Osamu Hashimoto* *Department of Electrical Engineering and Electronics, College of Science and Engineering, Aoyama Gakuin University 5101 Fuchinobe, Sagamihara-shi, Kanagawa, 2298558, Japan Email:*{s-wata, hasimoto}@ee.aoyama.ac.jp Abstract-- In this paper, we propose a method for analyzing o
EuMC: Two Differential Open Resonator Techniques for Measuring Dielectric Constants of Thin Films on Substrates
Two differential open resonator techniques for measuring dielectric constants of thin films on substrates Sergey N. Dudorov, Dmitri V. Lioubtchenko, Juha A. Mallat, and Antti V. R¨ is¨ nen a a MilliLab, Radio Laboratory/SMARAD, Helsinki University of Technology, P.O. Box 3000, FI-02015 TKK, Finland, Tel: +358 9 451 2219; Fax: +358 9 451 2152, e-mail: sdudorov@cc.hut.fi Abstract-- In this work we
EuMC: Electromechanical Resonances of SiC and AlN Beams Under Ambient Conditions
Electromechanical Resonances of SiC and AlN Beams under Ambient Conditions K. Brueckner1, Ch. Förster2, K. Tonisch2, V. Cimalla2, O. Ambacher2, R. Stephan1, K. Blau1, and M. A. Hein1 Department for RF and Microwave Techniques 2 Department of Nanotechnology Centre for Micro- and Nanotechnologies Technische Universität Ilmenau, P.O. Box 100565, 98684 Ilmenau, Phone +49 (3677) 69-1580 1 Abstract --