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GAAS: A Novel Technique for Obtaining LO and RF (LSB) Rejection in 25--40 GHz Microwave Up Conversion Mixers Based on the Concepts of Distributed and Double Balanced Mixing
A Novel Technique for Obtaining LO and RF (LSB) Rejection in 25-40 GHz Microwave Up Conversion Mixers Based on the Concepts of Distributed and Double Balanced Mixing M. Mehdi1, C. Rumelhard1, J. L. Polleux1, B. Lefebvre2 1 2 ESYCOM - Photonic and Microwave Group, Champs / Marne 77420, France United Monolithic Semiconductors, Thales Group - BP46, Orsay 91401, France Abstract -- In this paper a n
GAAS: An Active Balun for High-CMRR IC Design
An Active Balun for High-CMRR IC Design Francesco Centurelli1, Raimondo Luzzi2, Piero Marietti1, Giuseppe Scotti1, Pasquale Tommasino1, Alessandro Trifiletti1 1 University of Rome "La Sapienza", Department of Electronic Engineering, Via Eudossiana 18, I-00184 Roma, Italy, +39 06 44585679 2 Infineon technologies Austria AG, Development Center Graz, Babenberger Str. 10, A-8020 Graz, Austria, +43 05
GAAS: System-Level Simulation of a Noisy Phase-Locked Loop
System-Level Simulation of a Noisy Phase-locked Loop Frank Herzel and Maxim Piz IHP Im Technologiepark 25, 15236 Frankfurt (Oder), Germany Tel.: +49 5625765, e-mail: herzel@ihp-microelectronics.com Abstract-- This paper presents a compact model of a noisy phase-locked loop (PLL) for inclusion in a timedomain system simulation. The phase noise of the reference is modeled as a Wiener process, and t
GAAS: Large-Signal Behavioral Model of a Packaged RF Amplifier Based on QPSK-Like Multisine Measurements
Large-Signal Behavioral Model of a Packaged RF Amplifier Based on QPSK-Like Multisine Measurements Maciej Myslinski1, Dominique Schreurs1, Kate A. Remley2, Michael D. McKinley2, Bart Nauwelaers1 K.U.Leuven, Div. ESAT-TELEMIC, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium e-mail: maciej.myslinski@esat.kuleuven.ac.be; phone: +32-16-321117; fax: +32-16-321986 2 National Institute of Standards and T
GAAS: 10 Gbit/s Differential Amplifier Demonstrating Striplines in 0.18(mu)m CMOS Technology
10 Gbit/s Differential Amplifier Demonstrating Striplines in 0.18µm CMOS Technology B. Milivojevic, Z. Gu, A. Thiede University of Paderborn, Department of High Frequency Electronic Warburger Street 100, 33098 Paderborn, Germany milivojevic@ont.upb.de Abstract -- We demonstrate the differential amplifier using striplines in 0.18µm CMOS technology. A test circuit has single-phase gain of 6 dB and
GAAS: Multilayer RF PCB for Space Applications: Technological and Interconnections Trade-Off
Multilayer RF PCB for Space Applications : technological and interconnections trade-off M. Paillard 1 , F. Bodereau 1, C. Drevon 1, P. Monfraix 1, J.L. Cazaux 1 L.Bodin 2, P. Guyon 2 Alcatel Space, 26 Avenue Champollion, BP1187, F-31037 Toulouse, France mathieu.paillard@space.alcatel.fr, Tel : +33 (0)5 34 35 37 73, Fax: +33 (0)5 34 35 69 47 2 Cimulec, Z.I "les Jonquières", F-57365 Ennery, France l
GAAS: Modelling of a 4--18GHz 6W Flip-Chip Integrated Power Amplifier Based on GaN HEMTs Technology
Modelling of a 4-18GHz 6W Flip-Chip Integrated Power Amplifier based on GaN HEMTs Technology Sandra De Meyer1, Audrey Philippon1, Michel Campovecchio1, Christophe Charbonniaud1, Stéphane Piotrowicz2, Didier Floriot2, Raymond Quéré1 1 IRCOM-MITIC, CNRS UMR 6615, 123 Avenue A. Thomas, 87000 Limoges, France, (33)5-55-45-77-34 2 Thalès-TRT-MITIC, Domaine de Corbeville, 91404 Orsay Cedex, France, (33)
GAAS: A Low-Noise X-Band Microstrip VCO with 2.5 GHz Tuning Range Using a GaN-on-SiC p-HEMT
A low-noise X-band microstrip VCO with 2.5 GHz tuning range using a GaN-on-SiC p-HEMT A.P.M. Maas, F.E. van Vliet TNO Defence, Security and Safety, Oude Waalsdorperweg 63, 2597 AK Den Haag, Netherlands, +31703740000 III. OSCILLATOR DESIGN The VCO design is based on the negative impedance approach. The transistor is embedded in a network with source series feedback, effectively creating a negative
GAAS: 60 GHz GaAs MMIC Mixers with Integrated LO Buffer
60 GHz GaAs MMIC mixers with integrated LO buffer A.P.M. Maas, J.A. Hoogland TNO Defence, Security and Safety, Oude Waalsdorperweg 63, 2597 AK Den Haag, Netherlands, +31703740000 Abstract -- Using the 0.15 µm GaAs mHEMT process from WIN semiconductors, two 60 GHz down-conversion mixers have been designed, processed and measured. Both designs include a LO buffer amplifier to allow for a reduced ext
GAAS: A W-Band MMIC Amplifier Using 70-nm Gate Length InP HEMT Technology
A W-band MMIC amplifier using 70-nm gate length InP HEMT technology Mikael Malmkvist, Anders Mellberg, and Jan Grahn Chalmers University of Technology, MC2, Microwave Electronics Laboratory, Kemivägen 9, SE-412 96 Göteborg, Sweden, Phone +46 31 772 10 00 Abstract -- InP HEMT transistors using 70-nm gate length have been fabricated and modeled. Two different epitaxial structures have been tested b