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EuMIC: A 10GHz Single-Supply GaAs MMIC Self-Synchronous Rectifier
Proceedings of the 17th European Microwave Integrated Circuits Conference A 10-GHz Single-Supply GaAs MMIC Self-Synchronous Rectifier Jack Molles#1 , Megan Robinson#2 , Eric Kwiatkowski#3 , Zoya Popovi´c#4 # Microwave Research Lab, University of Colorado Boulder, USA {1 Jack.Molles, 2 Megan.Robinson, 4 Zoya.Popovic}@colorado.edu, 3 eric@utvate.com Abstract — This paper presents an E-mode HEMT M
EuMIC: Counter-Intermodulation in the Context of CMOS Outphasing Transmitters
Proceedings of the 17th European Microwave Integrated Circuits Conference Counter-Intermodulation in the Context of CMOS Outphasing Transmitters Stefan Mueller#1 , Oner Hanay# , Renato Negra# of High Frequency Electronics, RWTH Aachen University, Germany 1 stefan.mueller@hfe.rwth-aachen.de S1 S2 ϕo Sout Phase-Modulator - S1 Phase-Modulator - S2 ωLO -3ωbb ωLO +ωbb ωLO +5ωbb Fig. 1. CIM di
EuMIC: Compact Patch-Like Bandpass Filter Using Grounded CSRR on BiCMOS 55nm Technology
Proceedings of the 17th European Microwave Integrated Circuits Conference Compact Patch-like Bandpass Filter using grounded CSRR on BiCMOS 55nm technology Mohammed Wehbi#1, Marc Margalef-Rovira*2, Cedric Durand$3, Philippe Ferrari #4 # TIMA Laboratory, Universite Grenoble Alpes, France IEMN, Université de Lille, 59652 Villeneuve d’Ascq, France $ TR&D, STMicroelectronics, Crolles, France 1 2 { mo
EuMIC: A Single-Stage Low-Noise SiGe HBT Distributed Amplifier with 13dBm Output Power and 20dB Gain in D-Band and Over 170GHz Bandwidth
Proceedings of the 17th European Microwave Integrated Circuits Conference A Single-Stage Low-Noise SiGe HBT Distributed Amplifier with 13 dBm Output Power and 20 dB Gain in D-Band and over 170 GHz Bandwidth Yves Baeyens1* , Muhammad Waleed Mansha1 , Holger R¨ucker2 1 Nokia 2 IHP-Leibniz-Institut Bell Labs, New Providence, NJ, USA f¨ur innovative Mikroelektronik, Frankfurt (Oder), Germany * Yves.
EuMIC: An Assembly Process Oriented Thermal-Mechanical Characterization of a Fan-Out Wafer-Level Package
Proceedings of the 17th European Microwave Integrated Circuits Conference An assembly process oriented thermal-mechanical characterization of a fan-out wafer-level package Zhibo Cao#1, Bruno Heusdens*, Afshin Ziaei , Mehmet Kaynak#2 ※ # IHP – Leibniz-Institut für innovative Mikroelektronik, Germany * TAIPRO Engineering, Belgium ※ THALES Group, France 1 2 { cao, kaynak}@ihp-microelectronics.com
EuMIC: A Non-Uniform Distributed GaN LO Amplifier for Wideband 5--38GHz Applications
Proceedings of the 17th European Microwave Integrated Circuits Conference A Non-Uniform Distributed GaN LO Amplifier for Wideband 5-38 GHz Applications Matthew Hodek* , Edward Gebara† , Chris Barisich† , Nicholas C. Miller‡ , Ryan Gilbert§ , John Papapolymerou* , John D. Albrecht * * Michigan State University, East Lansing, Michigan, USA Sensor Technologies, Inc., Atlanta, Georgia, USA ‡ Air For
EuMIC: A 315GHz Source with Integrated Antenna in InP-DHBT Technology
Proceedings of the 17th European Microwave Integrated Circuits Conference A 315 GHz Source with Integrated Antenna in InP-DHBT Technology M. Hossain*, Tom K. Johansen#, R. Doerner*, H. Yacoub*, W. Heinrich*, V. Krozer* * Ferdinand-Braun-Institut (FBH), Germany National Space Institute, Technical University of Denmark, Denmark maruf.hossain@fbh-berlin.de # The paper is organized as follows: Sec
EuMIC: A 1.5kW 90V S-Band GaN Transistor for Air Traffic Control Radars
Proceedings of the 17th European Microwave Integrated Circuits Conference A 1.5kW 90V S-band GaN Transistor for Air Traffic Control Radars Gabriele Formicone, Jeff Burger, Richard Keshishian, John Walker Integra Technologies Inc., El Segundo, USA Abstract— The inherent opportunity to achieving kW power level for S-band Air Traffic Control (ATC) radars with GaN transistors operated at voltages hi
EuMIC: A 28GHz Doherty PA with 22.9% PAE_(max) and 17.4% PAE at 6dB PBO in 0.13(mu)m SiGe Technology for 5G Application
Proceedings of the 17th European Microwave Integrated Circuits Conference A 28GHz Doherty PA with 22.9% PAEmax and 17.4% PAE at 6-dB PBO in 0.13μm SiGe Technology for 5G Application Hao Gao#, Sina Mortezazadeh Mahani#, David Seebacher*, Gernot Hueber#, Matteo Bassi* # Silicon Austria Labs, Austria Infineon Technologies Austria, Austria * Abstract — This paper presents an mm-wave Doherty PA in
EuMIC: 108 and 124GHz Fundamental VCOs with 21% and 7% DC-to-RF Efficiency in 22nm CMOS FDSOI
Proceedings of the 17th European Microwave Integrated Circuits Conference 108 and 124 GHz Fundamental VCOs with 21% and 7% DC-to-RF Efficiency in 22nm CMOS FDSOI Yasir Shafiullah, Mikko Hietanen, Marko E. Leinonen, Rehman Akbar, Janne Aikio, Jere Rusanen, Timo Rahkonen, Aarno P¨arssinen University of Oulu, Finland VDD Abstract — This paper presents the design of two high efficiency fundamental vol