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New Drain Current Model for MESFET/HEMT Devices Based on Pulsed Measurements
Proceedings of the 1st European Microwave Integrated Circuits Conference New drain current model for MESFET/HEMT devices based on pulsed measurements Guillermo Rafael-Valdivia, Ronan Brady, and Thomas J. Brazil School of Electrical, Electronic and Mechanical Engineering, University College Dublin, Dublin 4, Ireland Abstract -- In this work, a new Ids current equation and FET model are proposed ba
Ultra-Wideband Shielded Vertical via Transitions from DC up to the V-Band
Proceedings of the 1st European Microwave Integrated Circuits Conference Ultra-Wideband Shielded Vertical Via Transitions from DC up to the V-Band T. Kangasvieri1, J. Halme1, J. Vähäkangas1, and M. Lahti2 1 University of Oulu, Microelectronics and Materials Physics Laboratories and EMPART Research Group of Infotech Oulu, P.O. Box 4500, FIN-90014 Oulu, Finland; E-mail: terok@ee.oulu.fi; Tel:+358-
A Rigorous Comparison of Package and PCB Effects on Micromixer- and Gilbert Mixer-Based Upconverter MMICs
Proceedings of the 1st European Microwave Integrated Circuits Conference A Rigorous Comparison of Package and PCB Effects on Micromixerand Gilbert Mixer-Based Upconverter MMICs F.Y. Han, J.M. Wu, and T.S. Horng Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan phone: (886)-7-5254119, e-mail: jason@ee.nsysu.edu.tw Abstract -- A Volterra series analysis is
High Performance PIN Diode in 0.18-(mu)m SiGe BiCMOS Process for Broadband Monolithic Control Circuits
Proceedings of the 1st European Microwave Integrated Circuits Conference High Performance PIN Diode in 0.18-m SiGe BiCMOS Process for Broadband Monolithic Control Circuits Pinping Sun, Parag Upadhyaya, Le Wang, Dong-Ho Jeong*, Deukhyoun Heo Washington State University, The School of Electrical Engineering and Computer Science, Pullman, WA 99163-2752 psun@eecs.wsu.edu,(509)263-9961 * Dongyang Univ
Influence of Interconnect Parasitics on the Lateral Scaling of SiGe Power HBTs
Proceedings of the 1st European Microwave Integrated Circuits Conference Influence of Interconnect Parasitics on the Lateral Scaling of SiGe Power HBTs Guogong Wang, Hao-Chih Yuan, and Zhenqiang Ma* University of Wisconsin-Madison, Department of Electrical and Computer Engineering 1415 Engineering Drive, Madison, WI 53706, USA *Phone: 608-261-1095 Email: mazq@engr.wisc.edu Abstract -- The influen
Configuration Dependence of SiGe HBT Linearity Characteristics
Proceedings of the 1st European Microwave Integrated Circuits Conference Configuration Dependence of SiGe HBT Linearity Characteristics Guoxuan Qin, Ningyue Jiang, Guogong Wang and Zhenqiang Ma* University of Wisconsin-Madison, Department of Electrical and Computer Engineering, 1415 Engineering Drive, Madison, WI 53706, USA Phone/Fax: (608) 261-1095 *Email: mazq@engr.wisc.edu Abstract--Linearity
RF-MEMS Technology Platform for Agile Mobile and Satellite Communications
Proceedings of the 1st European Microwave Integrated Circuits Conference RF-MEMS technology platform for agile mobile and satellite communications X. Rottenberg 1,2, P. Soussan 1, S. Stoukatch 1, P. Czarnecki 1, B. Nauwelaers 2, G. Carchon 1, I. De Wolf 1, W. De Raedt 1 and H. A. C. Tilmans 1 1 2 IMEC v.z.w., Division MCP, Kapeldreef 75, B3001 Leuven, Belgium K.U.Leuven, ESAT, Kasteelpark Arenb
First InP/GaAsSb/InP DHBT Ka-Band MMIC Oscillator
Proceedings of the 1st European Microwave Integrated Circuits Conference First InP/GaAsSb/InP DHBT Ka-band MMIC Oscillator Xin Zhu1,2, Jing Wang1, and Dimitris Pavlidis1,3 Department of Electrical Engineering and Computer Science The University of Michigan, 1301 Beal Avenue, Ann Arbor, MI 48109-2122, USA 2 3 1 PDF Solutions, Inc., 333 W San Carlos St, San Jose, CA 95110, USA Department of High
LF Noise Analysis of InP/GaAsSb/InP and InP/InGaAs/InP HBTs
Proceedings of the 1st European Microwave Integrated Circuits Conference LF noise analysis of InP/GaAsSb/InP and InP/InGaAs/InP HBTs C. Maneux1, B. Grandchamp1, N. Labat1, A. Touboul1, M. Riet2, J. Godin2, Ph. Bove3 1 IXL, UMR 5818 CNRS, University Bordeaux 1, 351 cours de la Libération, 33405 Talence, France 2 ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis Cedex, France, 3 PICOGIGA
Four-Port Deembedding Technique for FET Devices Mounted in Hybrid Test Fixture
Proceedings of the 1st European Microwave Integrated Circuits Conference Four-port Deembedding Technique for FET Devices Mounted in Hybrid Test Fixture M.A. Yarleque Medina, D. Schreurs, and B. Nauwelaers Katholieke Universiteit Leuven, Div. ESAT-Telemic, Kasteelpark Arenberg 10, B-3001 LeuvenHeverlee, Belgium Abstract -- High frequency devices aimed for power applications cannot be characterized