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RF-MEMS uniplanar 180º Phase Switch based on switching between two out-of-phase paths
RF-MEMS uniplanar 180º Phase Switch based on switching between two out-of-phase paths Marco Antonio Llamas1, David Girbau2, Miquel Ribó3, Lluís Pradell4, Antonio Lázaro2, Flavio Giacomozzi5, Benno Margesin5 Baolab Microsystems, Ctra. N-150, Km 14.5, 08220 Terrassa, Spain Automatics, Electronics and Electrical Department, Universitat Rovira i Virgili, 43007 Tarragona, Spain 3 Department of Electron
Modeling of Dielectric Charging in MEMS Capacitive Switches
Modeling of Dielectric Charging in MEMS Capacitive Switches George Papaioannou1,2,3, Fabio Coccetti1,2,4, and Robert Plana1,2 CNRS ; LAAS, 7 avenue du Colonel Roche, F-31077, Toulouse, France Universite de Toulouse; UPS, INSA, INP, ISAE, LAAS ; F-31077, Toulouse, France 3 Physics Dpt., University of Athens, Athens, Panepistimiopolis Zografos, Athens, 15784, Greece 4 Novamems, 10 av. De l' Europe,
Advances in MEMS Capacitive Switch Technology Charles L. Goldsmith, Sean O'Brien, and Derek Scarbrough
Advances in MEMS Capacitive Switch Technology Charles L. Goldsmith, Sean O'Brien, and Derek Scarbrough MEMtronics Corporation Plano, Texas, USA cgoldsmith@memtronics.com Abstract This article overviews improvement in RF MEMS switch robustness against environmental changes and adverse operating conditions. Implementation of molybdenum mechanical membranes have demonstrated a very low change over
BiCMOS Embedded MEMS Modules: MEMS-IC Integration
BiCMOS Embedded MEMS Modules: MEMS-IC Integration M. Kaynak1, K. E. Ehwald1, J. Drews1, K. Schulz1, F. Korndörfer1, C. Wipf1, R. Scholz1, B. Tillack1,2 2 IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin, Germany H H H 1 Tel: (+49) 335 5625 707, Fax: (+49) 335 5625 327, Email: kaynak@ihp-microelectronics.com H Abstrac
A Novel Surface Micro-machined V oltage Comparator for Mixed Signal Operation in MEMS Sensor
A Novel Surface Micro-machined Voltage Comparator for Mixed Signal Operation in MEMS Sensor Subha Chakraborty Dept. of Electronics and Electrical Communication Engineering IIT Kharagpur Kharagpur, India subharpe@gmail.com Tarun K. Bhattacharyya Dept. of Electronics and Electrical Communication Engineering IIT Kharagpur Kharagpur, India tkb@ece.iitkgp.ernet.in In [1]-[6], development of such eleme
Integrated RF-MEMS for GaN-based MMICs
Integrated RF-MEMS for GaN-based MMICs F. Crispoldi#1, S. Lavanga#1, A. Pantellini#1, L.Venturelli#1, P. Romanini#1, A. Nanni#1, P. Farinelli#3, L.Rizzi#2 and C. Lanzieri#1 #1 SELEX Sistemi Integrati S.p.A, Via Tiburtina Km.12,400, Rome 00131, Italy #2 Consorzio Optel Via Tagliamento 45, 00198 Rome, Italy #3 Universita' di Perugia, DIEI, Via G. Duranti 93, Perugia 06125, Italy Corresponding autho
High Isolation T-switch for reconfigurable switching Matrix
High Isolation T-switch for reconfigurable switching Matrix N. Torres Matabosch 1,2, F. Coccetti1,2, R.Plana1,2, B.Reig3 and JL. Cazaux4 LAAS-CNRS, 7 Avenue Colonel Roche, F-31077 Toulouse, France Université de Toulouse ; UPS, INSA, INP, ISAE ; LAAS ; F-31077 Toulouse, France 3 CEA, LETI, MINATEC, F-38054 Grenoble, France 4 Thales Alenia Space, 26 Avenue Jean-François Champollion, 31037 Toulouse,
GaAs MMIC based RF MEMS Switches for Highly Integrated Switched LNA Redundancy Networks
GaAs MMIC based RF MEMS Switches for Highly Integrated Switched LNA Redundancy Networks R. Malmqvist#1, C. Samuelsson#2, P. Rantakari1, H.Zirath§1, D. Smith£1, T. Vähä-Heikkilä2, and R. Baggen*1 # FOI Swedish Defence Research Agency, Olaus Magnus väg 42, SE-583 30, Linköping, Sweden 1 robert.malmqvist@foi.se, 2carl.samuelsson@foi.se VTT Technical Research Institute of Finland, Espoo, Finland 1 P
Integrated RF MEMS/CMOS Devices
Integrated RF MEMS/CMOS Devices R. R. Mansour, S. Fouladi and M. Bakeri-Kassem University of Waterloo Waterloo, Ontario, Canada Abstract- A maskless post-processing technique for CMOS chips is developed that enables the fabrication of RF MEMS devices with parallel-plate structure including tunable capacitors with a high quality factor and a very compact size and capacitive RF MEMS switches. Simula
Reliability Investigation of Stress-Compensated Metal-Coated Monocrystalline-Silicon Membranes for MEMS Tuneable High-Impedance Surfaces
Reliability Investigation of Stress-Compensated Metal-Coated Monocrystalline-Silicon Membranes for MEMS Tuneable High-Impedance Surfaces Mikael Sterner , Dmitry Chicherin , Antti V. Räisänen , Göran Stemme and Joachim Oberhammer Technology Lab, KTH Royal Institute of Technology SE-100 44 Stockholm, Sweden, Email: msterner@kth.se Dept. of Radio Science and Engineering / SMARAD, Aalto University